Dielevel 3D Integration Technology For Rapid Prototyping Of Highperformance Multifunctionality Heterointegrated Systems

• doi: 10.1109/TED.2013.2280273
• title: Die-Level 3-D Integration Technology for Rapid Prototyping of High-Performance Multifunctionality Hetero-Integrated Systems
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2283
• access_type: LOCKED
• content_type: Journals
• abstract: We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5- μm diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.
• article_number: 6601012
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6601012
• html_url: https://ieeexplore.ieee.org/document/6601012/
• abstract_url: https://ieeexplore.ieee.org/document/6601012/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 6637023
• publication_year: 2013
• publication_date: Nov. 2013
• start_page: 3842
• end_page: 3848
• citing_paper_count: 27
• citing_patent_count: 0
• download_count: 538
• insert_date: 20130916
• index_terms:
  • ieee_terms:
    • Through-silicon vias
    • Image sensors
    • Silicon
    • Dielectrics
    • Surface treatment
    • Tin
  • author_terms:
    • Backside through silicon via (TSV)
    • die-level 3-D integration
    • hetero-integrated system
  • dynamic_index_terms:
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Image Sensor
    • Camera Sensor
    • Flip-chip
    • Microbumps
    • Image Processing
    • Spin-coated
    • Oxide Layer
    • Contact Resistance
    • Interfacial Resistance
    • Contact Impedance
    • Dielectric Layer
    • Insulation Layer
    • Si Substrate
    • Electroplating
    • Electrochemical Deposition
    • Functional Devices
    • Semiconductor Industry
    • Semiconductor Manufacturing
    • Semiconductor Fabrication
    • Alignment Accuracy
    • Chip Surface
    • CMOS Technology
    • Dry Etching
    • Color Filter
    • Stripper
    • Alignment Marks
    • Commercial Chip
    • Back-end-of-line
    • Good Electrical Contact
    • Production Of Prototypes
    • Low Flexibility
    • Tetraethyl Orthosilicate
    • Tetraethoxysilane
    • TEOS
    • Surface Layer
• authors:
  • Author Name: Kang-Wook Lee
    Affiliation: New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37407640200
    ID: 37407640200
    Order: 1
    Author Affiliations:
    • New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
  • Author Name: Yuki Ohara
    Affiliation: Department of Bioengineering and Robotics, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37390858100
    ID: 37390858100
    Order: 2
    Author Affiliations:
    • Department of Bioengineering and Robotics, Tohoku University, Sendai, Japan
  • Author Name: Kouji Kiyoyama
    Affiliation: Department of Electrical and Electronic Engineering, Nagasaki Institute of Applied Science, Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37327656500
    ID: 37327656500
    Order: 3
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Nagasaki Institute of Applied Science, Nagasaki, Japan
  • Author Name: Ji-Cheol Bea
    Affiliation: New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37393017200
    ID: 37393017200
    Order: 4
    Author Affiliations:
    • New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
  • Author Name: Mariappan Murugesan
    Affiliation: New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37322536300
    ID: 37322536300
    Order: 5
    Author Affiliations:
    • New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
  • Author Name: Takafumi Fukushima
    Affiliation: New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37396820300
    ID: 37396820300
    Order: 6
    Author Affiliations:
    • New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
  • Author Name: Tetsu Tanaka
    Affiliation: Department of Bioengineering and Robotics, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37403329200
    ID: 37403329200
    Order: 7
    Author Affiliations:
    • Department of Bioengineering and Robotics, Tohoku University, Sendai, Japan
  • Author Name: Mitsumasa Koyanagi
    Affiliation: New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37283392400
    ID: 37283392400
    Order: 8
    Author Affiliations:
    • New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 2 Mpixel
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 10,000 fps

Applications & Benefits

• cell_imaging: The CMOS image sensor is used for high-speed and high parallel image processing in applications such as smartphones and medical devices.
• benefits: The use of the 3-D stacked design allows for high performance, multifunctionality, and rapid prototyping.

Supporting Organizations

• supported_by: New Energy and Industrial Organization of Japan, Tohoku University, Nagasaki Institute of Applied Science.

Manuscript Details

• publication_date: Nov. 2013

Relevancy Score

• score: 10

Processed JSON Filename

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