Developments Of The Pinned Photodiode Terahertz Rectifier

• doi: 10.1109/IRMMW-THz.2016.7758353
• title: Developments of the pinned photodiode terahertz rectifier
• publisher: IEEE
• isbn: 978-1-4673-8486-5
• issn: 2162-2035
• rank: 2279
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents we presents a development of the structure of the pinned photodiode terahertz rectifier, in which the metal whisker of the antenna is separated from the semiconductor by a silane oxide layer, in order to reduce the surface defectiveness. The rectifies is the basic component of an image detection system based on the structure of actual CMOS image detectors. The structure combines a nano-antenna, fabricated on the top of a standard image sensor, the rectifier, and the readout electronics. The rectifier device proposed has vertical extension of some tenths of nanometers, can be created at the foot of the nano-whisker at the end of the terahertz antenna, above the storage well.
• article_number: 7758353
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7758353
• html_url: https://ieeexplore.ieee.org/document/7758353/
• abstract_url: https://ieeexplore.ieee.org/document/7758353/
• publication_title: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
• conference_location: Copenhagen, Denmark
• conference_dates: 25-30 Sept. 2016
• publication_number: 7707293
• is_number: 7758325
• publication_year: 2016
• publication_date: 25-30 Sept. 2016
• start_page: 1
• end_page: 2
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 87
• insert_date: 20161201
• index_terms:
  • ieee_terms:
    • Current measurement
    • Semiconductor device measurement
    • Rectifiers
    • Metals
    • Radio frequency
    • Helical antennas
  • dynamic_index_terms:
    • Terahertz
    • PIN Photodiode
    • Image Sensor
    • Camera Sensor
    • Electric Field Magnitude
    • Readout Electronics
    • Forward Bias
    • Forward Voltage
    • RF Power
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-4673-8486-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4673-8485-8, isbnType: New-2005
• authors:
  • Author Name: V. Varlamava
    Affiliation: Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy
    Author URL: https://ieeexplore.ieee.org/author/38467129900
    ID: 38467129900
    Order: 1
    Author Affiliations:
    • Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy
  • Author Name: G. De Amicis
    Affiliation: LFoundry, Avezzano, Italy
    Author URL: https://ieeexplore.ieee.org/author/37086208242
    ID: 37086208242
    Order: 2
    Author Affiliations:
    • LFoundry, Avezzano, Italy
  • Author Name: A. Del Monte
    Affiliation: LFoundry, Avezzano, Italy
    Author URL: https://ieeexplore.ieee.org/author/37086210486
    ID: 37086210486
    Order: 3
    Author Affiliations:
    • LFoundry, Avezzano, Italy
  • Author Name: R. Rao
    Affiliation: Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy
    Author URL: https://ieeexplore.ieee.org/author/37407353900
    ID: 37407353900
    Order: 4
    Author Affiliations:
    • Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy
  • Author Name: F. Palma
    Affiliation: Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy
    Author URL: https://ieeexplore.ieee.org/author/37314712600
    ID: 37314712600
    Order: 5
    Author Affiliations:
    • Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy

Image Sensor

• sensor_type: CMOS
• resolution: 16x16 pixels (test structure)
• dynamic_range: not specified
• pixel_size: 100x100 nm
• dark_current: <2 electrons/s at forward bias of 100 mV

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: 6 electrons/s at room temperature from the SW

Applications & Benefits

• cell_imaging: The proposed detector may be applicable in THz radiation detection for imaging systems.
• benefits: The CMOS compatible direct conversion THz radiation detector operates at room temperature while maintaining high nonlinearity and detection capability.

Supporting Organizations

• supported_by: LFoundry, Avezzano, Italy

Manuscript Details

• publication_date: 25-30 Sept. 2016

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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