Development And Characterization Of Cmosbased Monolithic Xray Imager Sensor

• doi: 10.1109/NSSMIC.2007.4436536
• title: Development and characterization of CMOS-based monolithic X-ray imager sensor
• publisher: IEEE
• isbn: 978-1-4244-0923-5
• issn: 1082-3654
• partnum: 07CH37869
• rank: 2221
• access_type: LOCKED
• content_type: Conferences
• abstract: We proposed a new design of CMOS-based X-ray image sensor with monolithically grown pixelated CsI(T1) on photosensor area for securing the maximally achievable spatial resolution for a given sensitivity determined by the CsI(TI) thickness at a certain X-ray energy. The test version of a CMOS image sensor(CIS) was designed and fabricated using AMIS 0.5μm standard CMOS process. The chip includes an 128X128 CMOS active pixel sensor(APS) array with 50μm pitch, a row/column decoder, a sample & hold circuit with buffers, an analog signal processor(ASP) and a 10 bit pipe-lined analog-to-digital converter(ADC). A data acquisition system (DAS) for operating the image sensor and for processing digital signals was also developed. Then the X-ray image sensor was fabricated by depositing thermally evaporated CsI(TI) blocks of 50μm thick on each pixel sensor of CIS using a photo-resist pattern as a basis of CsI(TI) deposition. Linearity of the response, dark current noise, dynamic range and spatial resolution etc. were measured with bare and scintillator-coupled CIS image sensors by green LED light and X-ray beam respectively. The mean charge generation rate per pixel measured at room temperature in the dark was about 45,600 electrons/sec which results in he electronic noise of 210 electrons for Isec exposure time. Therefore the dynamic range is −67 dB if we consider the statistical noise together. The spatial resolution of scintillator- coupled CMOS image sensor was measured to be −71p/mm by a lead line pattern and 80 kVp X-ray. This works was supported by Nuclear R&D Program of MOST, Korea through KOSEF.
• article_number: 4436536
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4436536
• html_url: https://ieeexplore.ieee.org/document/4436536/
• abstract_url: https://ieeexplore.ieee.org/document/4436536/
• publication_title: 2007 IEEE Nuclear Science Symposium Conference Record
• conference_location: Honolulu, HI, USA
• conference_dates: 26 Oct.-3 Nov. 2007
• publication_number: 4436263
• is_number: 4436479
• publication_year: 2007
• publication_date: 26 Oct.-3 Nov. 2007
• start_page: 1950
• end_page: 1953
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 334
• insert_date: 20080122
• index_terms:
  • ieee_terms:
    • X-ray imaging
    • Image sensors
    • Sensor phenomena and characterization
    • Spatial resolution
    • CMOS image sensors
    • Computational Intelligence Society
    • Pixel
    • CMOS process
    • Sensor arrays
    • Signal processing
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Spatial Resolution
    • Dynamic Range
    • Linear Response
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Data Acquisition System
    • X-ray Energy
    • Statistical Noise
    • Sensor Design
    • Dark Current
    • Sensor Pixel
    • Scintillator
    • High Frequency Region
    • Interface Board
• isbn_formats:
  • format: CD, value: 978-1-4244-0923-5, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-0922-8, isbnType: New-2005
• authors:
  • Author Name: Gyuseong Cho
    Affiliation: Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087190761
    ID: 37087190761
    Order: 1
    Author Affiliations:
    • Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Bo Kyung Cha
    Affiliation: Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087696851
    ID: 37087696851
    Order: 2
    Author Affiliations:
    • Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Jun Hyung Bae
    Affiliation: Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087694571
    ID: 37087694571
    Order: 3
    Author Affiliations:
    • Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Byoung-Jik Kim
    Affiliation: Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087696970
    ID: 37087696970
    Order: 4
    Author Affiliations:
    • Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Sung Chae Jeon
    Affiliation: KERI, Electro-bio sensor research group, Gyeonggi, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087593992
    ID: 37087593992
    Order: 5
    Author Affiliations:
    • KERI, Electro-bio sensor research group, Gyeonggi, South Korea
  • Author Name: Young-Hee Kim
    Affiliation: Department of Electric Engineering, Changwon NatE28099l University, Changwon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37087149782
    ID: 37087149782
    Order: 6
    Author Affiliations:
    • Department of Electric Engineering, Changwon NatE28099l University, Changwon, South Korea
  • Author Name: Gyu-Ho Lim
    Affiliation: Department of Electric Engineering, Changwon NatE28099l University, Changwon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37088294405
    ID: 37088294405
    Order: 7
    Author Affiliations:
    • Department of Electric Engineering, Changwon NatE28099l University, Changwon, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: 128x128
• dynamic_range: ~67 dB
• pixel_size: 50μm
• dark_current: 45600 electrons/sec

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: 210 electrons for 1sec exposure time

Applications & Benefits

• cell_imaging: Used for X-ray imaging applications such as dental radiography and mammography.
• benefits: CMOS-based X-ray image sensors improve spatial resolution and have robustness against radiation damage.

Supporting Organizations

• supported_by: Nuclear R&D Program of MOST, Korea through KOSEF.

Manuscript Details

• publication_date: 26 Oct.-3 Nov. 2007

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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