Design Of Antiradiation Cmos Pixel On Soi Wafer

• doi: 10.1109/ICSICT.2012.6467734
• title: Design of anti-radiation CMOS pixel on SOI wafer
• publisher: IEEE
• isbn: 978-1-4673-2473-1
• issn:
• partnum: 12EX5859
• rank: 2192
• access_type: LOCKED
• content_type: Conferences
• abstract: As the demand grows for applications of higher reliability, the industry pushes for CMOS image sensors that deliver better anti-radiation performance. The SOI technology (Silicon-On-Insulator), widely-known as the best solution so far, in this regard, introduces a buried oxide layer in between the top silicon layer and the sub one. Isolating devices apart from the substrate, the buried oxide layer is able to effectively cut out the influence of electron-hole pairs that are generated by the radiation. However, a traditional SOI wafer has such a thin top silicon layer (usually less than 100nm in thickness) that when it is applied to CMOS image sensors, pixels lack the desirable depth to absorb the long wavelength light. Thereby, we designed a new type of pixel, simulated it in TCAD software, and noted the result was satisfactory.
• article_number: 6467734
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6467734
• html_url: https://ieeexplore.ieee.org/document/6467734/
• abstract_url: https://ieeexplore.ieee.org/document/6467734/
• publication_title: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
• conference_location: Xi'an, China
• conference_dates: 29 Oct.-1 Nov. 2012
• publication_number: 6459619
• is_number: 6466666
• publication_year: 2012
• publication_date: 29 Oct.-1 Nov. 2012
• start_page: 1
• end_page: 3
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 248
• insert_date: 20130221
• index_terms:
  • ieee_terms:
    • Photodiodes
    • CMOS image sensors
    • Silicon
    • Radiation effects
    • Logic gates
    • Charge carrier processes
    • Electric potential
  • dynamic_index_terms:
    • Wavelength Of Light
    • Electron Hole Pairs
    • Silicon-on-insulator
    • Buried Oxide
    • Types Of Pixels
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
• isbn_formats:
  • format: CD, value: 978-1-4673-2473-1, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4673-2474-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4673-2475-5, isbnType: New-2005
• authors:
  • Author Name: Li Tian
    Affiliation: Department of nine, Shanghai Institute of Technical Physics, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37085509561
    ID: 37085509561
    Order: 1
    Author Affiliations:
    • Department of nine, Shanghai Institute of Technical Physics, Shanghai, China
  • Author Name: Tianle Miao
    Affiliation: CIS Research Center, Shanghai Advanced Research Institute, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/38551278300
    ID: 38551278300
    Order: 2
    Author Affiliations:
    • CIS Research Center, Shanghai Advanced Research Institute, Shanghai, China
  • Author Name: Hui Wang
    Affiliation: CIS Research Center, Shanghai Advanced Research Institute, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/38551147100
    ID: 38551147100
    Order: 3
    Author Affiliations:
    • CIS Research Center, Shanghai Advanced Research Institute, Shanghai, China
  • Author Name: Jun Wei
    Affiliation: Department of nine, Shanghai Institute of Technical Physics, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/38548857400
    ID: 38548857400
    Order: 4
    Author Affiliations:
    • Department of nine, Shanghai Institute of Technical Physics, Shanghai, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Applicable in smartphones, medical devices, and automotive systems.
• benefits: Enables digital imaging.

Supporting Organizations

• supported_by: Shanghai Institute of Technical Physics

Manuscript Details

• publication_date: 29 Oct.-1 Nov. 2012

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

request_1a25bc40-eca4-44c0-8e5b-090de2620e3f-design_of_antiradiation_cmos_pixel_on_soi_wafer.json