Design Of A Radiation Tolerant Cmos Image Sensor

• doi: 10.1109/ISICir.2011.6131984
• title: Design of a radiation tolerant CMOS image sensor
• publisher: IEEE
• isbn: 978-1-61284-864-8
• issn: 2325-0631
• partnum: 11EX5309
• rank: 2184
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents the design of a radiation tolerant CMOS image sensor for space applications. The pixel is based on a commercially available 4T pinned photodiode architecture and is designed using a number of radiation-tolerant physical layout techniques. In addition, a simple yet robust programmable column biasing current is proposed to deal with the dramatic temperature fluctuations. A prototype chip consisting 256×256 pixel array has been implemented using TSMC 0.18 CIS process.
• article_number: 6131984
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6131984
• html_url: https://ieeexplore.ieee.org/document/6131984/
• abstract_url: https://ieeexplore.ieee.org/document/6131984/
• publication_title: 2011 International Symposium on Integrated Circuits
• conference_location: Singapore
• conference_dates: 12-14 Dec. 2011
• publication_number: 6125294
• is_number: 6131866
• publication_year: 2011
• publication_date: 12-14 Dec. 2011
• start_page: 412
• end_page: 415
• citing_paper_count: 7
• citing_patent_count: 0
• download_count: 553
• insert_date: 20120116
• index_terms:
  • ieee_terms:
    • Transistors
    • Photodiodes
    • Leakage current
    • CMOS image sensors
    • Arrays
    • Dark current
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Design
    • Radiation Tolerance
    • Radiation Hardness
    • Dramatic Fluctuations
    • PIN Photodiode
    • Silicon
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Worst-case Scenario
    • Settling Time
    • Colonial Times
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Dark Current
    • Gate Oxide
    • Types Of Pixels
• isbn_formats:
  • format: CD, value: 978-1-61284-864-8, isbnType: New-2005
  • format: Print ISBN, value: 978-1-61284-863-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-61284-865-5, isbnType: New-2005
• authors:
  • Author Name: Xinyuan Qian
    Affiliation: VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
    Author URL: https://ieeexplore.ieee.org/author/38236457300
    ID: 38236457300
    Order: 1
    Author Affiliations:
    • VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
  • Author Name: Hang Yu
    Affiliation: VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37089736693
    ID: 37089736693
    Order: 2
    Author Affiliations:
    • VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
  • Author Name: Bo Zhao
    Affiliation: VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
    Author URL: https://ieeexplore.ieee.org/author/38024438700
    ID: 38024438700
    Order: 3
    Author Affiliations:
    • VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
  • Author Name: Shoushun Chen
    Affiliation: VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37535877300
    ID: 37535877300
    Order: 4
    Author Affiliations:
    • VIRTUS IC Design Center of Excellence, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
  • Author Name: Kay Soon Low
    Affiliation: Satellite Research Center, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37378921400
    ID: 37378921400
    Order: 5
    Author Affiliations:
    • Satellite Research Center, School of Electric and Electronic Engineering, Nanyang Technological University, Singapore

Image Sensor

• sensor_type: CMOS
• resolution: 256x256
• dynamic_range: 60dB
• pixel_size: 6.5µm
• dark_current: 16.2mV/s

Optical Data

• focal_length: -
• aperture: -
• field_of_view: -
• distortion: -

Performance Metrics

• frame_rate: -
• signal_to_noise_ratio: -
• sensitivity: 2.92V/lux ⋅s
• shutter_speed: -
• power_consumption: -
• noise: -

Applications & Benefits

• cell_imaging: Used in space applications, particularly for radiation tolerance.
• benefits: High stability and reduced leakage current due to design techniques.

Supporting Organizations

• supported_by: Nanyang Assistant Professorship (M58040012), ACRF Project (M52040132)

Manuscript Details

• publication_date: 12-14 Dec. 2011

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_ef7bcb63-ce42-4ecf-b7ed-be653724d485-design_of_a_radiation_tolerant_cmos_image_sensor.json