Design Of A Lowpower High Snr Rolling Shutter 64Stage Tdi Image Sensor

• doi: 10.1109/ICCS62517.2024.10846645
• title: Design of a Low-power, High SNR Rolling Shutter 64-stage TDI Image Sensor
• publisher: IEEE
• isbn: 979-8-3503-5216-0
• issn:
• rank: 2172
• access_type: LOCKED
• content_type: Conferences
• abstract: The paper proposes a high-speed, high signal-to-noise ratio (SNR) 64-stage time delay integration (TDI) image sensor. To improve the line rate of the sensor, we partition the pixel array along the horizontal direction and read pixel information from both sides towards the middle. Additionally, we introduce a bypass current in the readout circuit to speed up clamp circuit establishment. Moreover, this sensor achieves better SNR performance due to noiseless charge transfer in the charge domain and noise robustness of the open-loop comparator. The proposed technique is experimentally verified on a 512 × 128 pixel TDI image sensor fabricated using a 55 nm CMOS process. Test results demonstrate that at a line rate of 3980 lines/s, the SNR can reach 67 dB at 64 stage. Compared with other work, there is an increase of 2.7% in line rate and 16.7% in SNR while maintaining low power consumption.
• article_number: 10846645
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10846645
• html_url: https://ieeexplore.ieee.org/document/10846645/
• abstract_url: https://ieeexplore.ieee.org/document/10846645/
• publication_title: 2024 6th International Conference on Circuits and Systems (ICCS)
• conference_location: Chengdu, China
• conference_dates: 20-23 Sept. 2024
• publication_number: 10845916
• is_number: 10845958
• publication_year: 2024
• publication_date: 20-23 Sept. 2024
• start_page: 112
• end_page: 117
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 25
• insert_date: 20250123
• index_terms:
  • ieee_terms:
    • Image sensors
    • Technological innovation
    • Power demand
    • Delay effects
    • CMOS process
    • Clamps
    • Charge transfer
    • Security
    • Signal to noise ratio
    • Sensor arrays
  • author_terms:
    • time delay integration (TDI)
    • readout circuit
    • signal-to-noise ratio (SNR)
    • line rate
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • High Signal-to-noise Ratio
    • Time Delay Integration
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Horizontal Plane
    • Horizontal Direction
    • Horizontal Distance
    • Power Consumption
    • Pixel Array
    • Charged Domain
    • Readout Circuit
    • Parasite
    • Positive Feedback
    • Self-reinforcing
    • Image Quality
    • Polarizability
    • Voltage-clamp
    • Threshold Voltage
    • State Machine
    • Finite-state
    • Finite State Machine
    • Setup Time
    • Charge Transfer Process
    • Specular Reflection
    • Operational Amplifier
    • Op-amp
    • Voltage Ramp
    • Readout Method
    • Peripheral Circuits
    • Enhance Image Quality
    • Current Mirror
    • Efficient Charge Transfer
    • Industrial Inspection
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-5216-0, isbnType: New-2005
  • format: USB ISBN, value: 979-8-3503-5214-6, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-5215-3, isbnType: New-2005
• authors:
  • Author Name: Xiaoyu Zhong
    Affiliation: School of Integrated, Circuits Jiangnan University, Wuxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089953890
    ID: 37089953890
    Order: 1
    Author Affiliations:
    • School of Integrated, Circuits Jiangnan University, Wuxi, China
  • Author Name: Yang Qiao
    Affiliation: School of Integrated, Circuits Jiangnan University, Wuxi, China
    Author URL: https://ieeexplore.ieee.org/author/838302923328302
    ID: 838302923328302
    Order: 2
    Author Affiliations:
    • School of Integrated, Circuits Jiangnan University, Wuxi, China
  • Author Name: Zhiguo Yu
    Affiliation: School of Integrated, Circuits Jiangnan University, Wuxi, China
    Author URL: https://ieeexplore.ieee.org/author/37085403821
    ID: 37085403821
    Order: 3
    Author Affiliations:
    • School of Integrated, Circuits Jiangnan University, Wuxi, China
  • Author Name: Xiaofeng Gu
    Affiliation: School of Integrated, Circuits Jiangnan University, Wuxi, China
    Author URL: https://ieeexplore.ieee.org/author/37535057900
    ID: 37535057900
    Order: 4
    Author Affiliations:
    • School of Integrated, Circuits Jiangnan University, Wuxi, China

Image Sensor

• sensor_type: CMOS
• resolution: 512x128
• dynamic_range: 67 dB
• pixel_size: 1.4 × 1.4 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 3980 lines/s
• signal_to_noise_ratio: 67 dB
• shutter_speed: 5 ns to 50 µs
• power_consumption: 92.28 mW

Applications & Benefits

• cell_imaging: Can be used for high-resolution imaging under varied light intensities in applications such as satellite imagery and automated industrial inspection.
• benefits: Low-power consumption while achieving high SNR and line rates.

Supporting Organizations

• supported_by: Key Research Project of Jiangsu Province, China; Joint Project of Yangtze River Delta Community of Sci-Tech Innovation

Manuscript Details

• publication_date: 20-23 Sept. 2024

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • noise

Processed JSON Filename

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