Design And Fabrication Of A Highdynamicrange Image Sensor In Tfa Technology

• doi: 10.1109/4.760382
• title: Design and fabrication of a high-dynamic-range image sensor in TFA technology
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 2121
• access_type: LOCKED
• content_type: Journals
• abstract: Image sensors in thin film on ASIC (TFA) technology are composed of amorphous silicon (a-Si:H) thin-film detectors on top of crystalline ASIC's. With regard to advanced imaging systems, TFA provides enhanced performance and more flexibility than conventional technologies. Extensive on-chip signal processing is feasible, as well as small pixels for high-resolution imagers. Several prototypes of TFA sensors have been developed, optimized for considerably different applications. This paper focuses on a TFA sensor for automotive vision systems that allows each pixel to adapt its individual sensitivity to the local illumination intensity. By this means, a dynamic range of 120-dB minimum along with high local contrast is achieved. The recent second prototype array consists of 368/spl times/256 pixels with an area of 40/spl times/38 /spl mu/m/sup 2/ each. The ASIC's were fabricated in a 0.7-/spl mu/m CMOS technology, whereupon the a-Si:H thin film was deposited in a plasma-enhanced chemical vapor deposition cluster system.
• article_number: 760382
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=760382
• html_url: https://ieeexplore.ieee.org/document/760382/
• abstract_url: https://ieeexplore.ieee.org/document/760382/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 16453
• publication_year: 1999
• publication_date: May 1999
• start_page: 704
• end_page: 711
• citing_paper_count: 36
• citing_patent_count: 11
• download_count: 425
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Fabrication
    • Image sensors
    • Semiconductor thin films
    • Thin film sensors
    • Prototypes
    • CMOS technology
    • Application specific integrated circuits
    • Amorphous silicon
    • Detectors
    • Crystallization
  • dynamic_index_terms:
    • Dynamic Range
    • Integration Time
    • Maximum Response
    • Photocurrent
    • Image Sensor
    • Camera Sensor
    • Spectral Response
    • Time Stamp
    • Illumination Intensity
    • High Dynamic Range
    • Dark Current
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • CMOS Technology
    • Amorphous Silicon
    • Silicon Thin Film
    • Local Contrast
    • PIN Diodes
    • Color Detection
    • Integration Interval
    • Transparent Conductive Oxide
    • Reactive Ion Etching Process
    • Germanium Detector
    • HPGe
    • Semiconductor Detector
    • Silicon Strip Detectors
    • Silicon Detector
    • Fill Factor
    • Circuitry
    • Threshold Voltage
    • High Fill Factor
    • Quantum Efficiency
• authors:
  • Author Name: T. Lule
    Affiliation: Silicon Vision GmbH, Siegen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37352114200
    ID: 37352114200
    Order: 1
    Author Affiliations:
    • Silicon Vision GmbH, Siegen, Germany
  • Author Name: B. Schneider
    Affiliation: Institute for Semiconductor Electronics, University of Siegen, Siegen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37319626700
    ID: 37319626700
    Order: 2
    Author Affiliations:
    • Institute for Semiconductor Electronics, University of Siegen, Siegen, Germany
  • Author Name: M. Bohm
    Affiliation: Institute for Semiconductor Electronics, University of Siegen, Siegen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37319627000
    ID: 37319627000
    Order: 3
    Author Affiliations:
    • Institute for Semiconductor Electronics, University of Siegen, Siegen, Germany

Image Sensor

• sensor_type: TFA Image Sensor
• resolution: 368 x 256 pixels
• dynamic_range: 120 dB minimum
• pixel_size: 40 x 38 µm
• dark_current: 3 x 10^-8 A/cm² (approximately)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: Far above video rate
• signal_to_noise_ratio: 71 dB
• shutter_speed: 5 µs to 2.56 ms
• noise: 400 µV RMS (approximate)

Applications & Benefits

• cell_imaging: Applications in automotive vision systems for dynamic range improvement.
• benefits: High dynamic range, capable of adapting pixel sensitivity to local illumination, minimizes blooming and supports multiple illumination conditions.

Supporting Organizations

• supported_by: Institute for Semiconductor Electronics, University of Siegen; Silicon Vision GmbH; Delphi Delco Automotive Systems

Manuscript Details

• publication_date: May 1999

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • power_consumption

Processed JSON Filename

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