Design And Development Of Encapsulation Process For Cistsv Wafer Level Package

• doi: 10.1109/ICEPT50128.2020.9202872
• title: Design and Development of Encapsulation Process for CIS-TSV Wafer Level Package
• publisher: IEEE
• isbn: 978-1-7281-6827-2
• issn:
• rank: 2095
• access_type: LOCKED
• content_type: Conferences
• abstract: Wafer-level chip scale packaging (WLCSP) using Via last technology was widely used in CMOS image sensor (CIS) package. Low aspect-ratio tapered through silicon via (TSV) was fabricated for electrical interconnection in mass production, which is not suitable for high IO product. In this paper, a new WLCSP based on vertical TSV structure was introduced. To meet higher reliability requirement, the key encapsulation process was studied by element finite simulation and design of experiment (DOE) for reliability test. The simulation and reliability test results showed the new encapsulation design proposed was a reliable solution for CIS-WLCSP.
• article_number: 9202872
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9202872
• html_url: https://ieeexplore.ieee.org/document/9202872/
• abstract_url: https://ieeexplore.ieee.org/document/9202872/
• publication_title: 2020 21st International Conference on Electronic Packaging Technology (ICEPT)
• conference_location: Guangzhou, China
• conference_dates: 12-15 Aug. 2020
• publication_number: 9199379
• is_number: 9201905
• publication_year: 2020
• publication_date: 12-15 Aug. 2020
• start_page: 1
• end_page: 3
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 415
• insert_date: 20200922
• index_terms:
  • ieee_terms:
    • Stress
    • Encapsulation
    • Through-silicon vias
    • Delamination
    • Reliability engineering
    • Silicon
  • author_terms:
    • WLCSP
    • CMOS Image Sensor
    • Reliability
    • Finite Element Simulation
  • dynamic_index_terms:
    • Wafer Level
    • Wafer-level Packaging
    • Simulation Results
    • Reliability Test
    • Finite Simulation
    • Reliable Test Results
    • Typical Structure
    • Dry Matter
    • Chemical Vapor Deposition
    • Vapor Deposition
    • Chemical Vapour Deposition
    • Chemical Deposition
    • Structural Design
    • Thermal Stress
    • Heat Load
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • Oxide Layer
    • Temperature Cycles
    • Reactive Ion Etching
    • Reactive-ion Etching
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • Cross-sectional SEM Images
    • Encapsulation Layer
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-6827-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-6826-5, isbnType: New-2005
• authors:
  • Author Name: Tianshen Zhou
    Affiliation: School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088511916
    ID: 37088511916
    Order: 1
    Author Affiliations:
    • School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
  • Author Name: Tao Hang
    Affiliation: School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/38101645100
    ID: 38101645100
    Order: 2
    Author Affiliations:
    • School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
  • Author Name: Shuying Ma
    Affiliation: Huatian Technology (Kunshan) Electronics Co., Ltd, Kunshan, China
    Author URL: https://ieeexplore.ieee.org/author/37086880080
    ID: 37086880080
    Order: 3
    Author Affiliations:
    • Huatian Technology (Kunshan) Electronics Co., Ltd, Kunshan, China
  • Author Name: Min Xiang
    Affiliation: Huatian Technology (Kunshan) Electronics Co., Ltd, Kunshan, China
    Author URL: https://ieeexplore.ieee.org/author/37086152018
    ID: 37086152018
    Order: 4
    Author Affiliations:
    • Huatian Technology (Kunshan) Electronics Co., Ltd, Kunshan, China

Image Sensor

• sensor_type: CMOS
• resolution: N/A
• dynamic_range: N/A
• pixel_size: N/A
• dark_current: N/A

Optical Data

• focal_length: N/A
• aperture: N/A
• field_of_view: N/A
• distortion: N/A

Performance Metrics

• frame_rate: N/A
• signal_to_noise_ratio: N/A
• sensitivity: N/A
• shutter_speed: N/A
• power_consumption: N/A
• noise: N/A

Applications & Benefits

• cell_imaging: CMOS image sensors are used in various applications, including smartphones and medical devices for digital imaging.
• benefits: Converts light into electrical signals, enabling digital imaging.

Supporting Organizations

• supported_by: Huatian Technology (Kunshan) Electronics Co., Ltd, Taiyo Kogyo Corporation

Manuscript Details

• publication_date: 12-15 Aug. 2020

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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