Design And Characterization Of Cmossoi Image Sensors

• doi: 10.1109/TED.2006.890585
• title: Design and Characterization of CMOS/SOI Image Sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2088
• access_type: LOCKED
• content_type: Journals
• abstract: The design, operation, and characterization of CMOS imagers implemented using: 1) "regular" CMOS wafers with a 0.5-mum CMOS analog process; 2) "regular" CMOS wafers with a 0.35-mum CMOS analog process; and 3) silicon-on-insulator (SOI) wafers in conjunction with a 0.35-mum CMOS analog process, are discussed in this paper. The performances of the studied imagers are compared in terms of quantum efficiency, dark current, and optical bandwidth. It is found that there is strong dependence of quantum efficiency of the photodiodes on the architecture of the image sensor. The results of this paper are useful for designing and modeling CMOS/SOI image sensors
• article_number: 4114832
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4114832
• html_url: https://ieeexplore.ieee.org/document/4114832/
• abstract_url: https://ieeexplore.ieee.org/document/4114832/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 4114830
• publication_year: 2007
• publication_date: March 2007
• start_page: 468
• end_page: 475
• citing_paper_count: 16
• citing_patent_count: 2
• download_count: 706
• insert_date: 20070417
• index_terms:
  • ieee_terms:
    • Photodiodes
    • MOSFET
    • Silicon-on-insulator
    • Poles and towers
    • Image sensors
    • Leakage currents
  • author_terms:
    • CMOS integrated circuits
    • image sensors
    • photodiodes
    • silicon-on-insulator (SOI) technology
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Quantum Efficiency
    • Dark Current
    • Silicon-on-insulator
    • Buried Oxide
    • Dependence Of Efficiency
    • Optical Bandwidth
    • Processing Technology
    • Engineering Process
    • Short Wavelength
    • Shorter Wavelengths
    • Epitaxial
    • Photocurrent
    • Efficiency Values
    • Optical Power
    • Lens Power
    • Refractive Power
    • Advanced Design
    • Minimum Area
    • Fill Factor
    • Parasitic Capacitance
    • Device Layer
    • Maximum Quantum Efficiency
    • Semiconductor Substrate
    • Dark Current Density
• authors:
  • Author Name: Igor Brouk
    Affiliation: Department of Electrical Engineering, Kidron Microelectronics Center, Technion-Israel Institute of Technology, Haifa, Israel
    Author URL: https://ieeexplore.ieee.org/author/37294090800
    ID: 37294090800
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Kidron Microelectronics Center, Technion-Israel Institute of Technology, Haifa, Israel
  • Author Name: Kamal Alameh
    Affiliation: Centre of Excellence for MicroPhotonic Systems, Edith Cowan University, WA, Australia
    Author URL: https://ieeexplore.ieee.org/author/37266865400
    ID: 37266865400
    Order: 2
    Author Affiliations:
    • Centre of Excellence for MicroPhotonic Systems, Edith Cowan University, WA, Australia
  • Author Name: Yael Nemirovsky
    Affiliation: Department of Electrical Engineering, Kidron Microelectronics Center, Technion-Israel Institute of Technology, Haifa, Israel
    Author URL: https://ieeexplore.ieee.org/author/37283695600
    ID: 37283695600
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, Kidron Microelectronics Center, Technion-Israel Institute of Technology, Haifa, Israel

Image Sensor

• sensor_type: CMOS
• resolution: 128x128, 64x64, 256x256
• dynamic_range: Not explicitly mentioned
• pixel_size: 20 µm, 10 µm
• dark_current: 0.12 µA/m² (for 0.5-µm process); Up to 1 mA/m² (for 0.35-µm process)

Optical Data

• focal_length: Not explicitly mentioned
• aperture: Not explicitly mentioned
• field_of_view: Not explicitly mentioned
• distortion: Not explicitly mentioned

Performance Metrics

• frame_rate: Not explicitly mentioned
• signal_to_noise_ratio: Not explicitly mentioned
• sensitivity: Not explicitly mentioned
• shutter_speed: Not explicitly mentioned
• power_consumption: Not explicitly mentioned
• noise: Not explicitly mentioned

Applications & Benefits

• cell_imaging: Used in intelligent systems for digital imaging
• benefits: High quantum efficiency, reduced dark current, improved optical bandwidth.

Supporting Organizations

• supported_by: Tower Semiconductor Ltd.

Manuscript Details

• publication_date: March 2007

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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