Depletionmode Mos Capacitor Modeling Investigation
- doi: 10.1109/CSTIC.2017.7919748
-
title: Depletion-mode MOS capacitor modeling
investigation
- publisher: IEEE
- isbn: 978-1-5090-6695-7
- issn:
- rank: 2077
- access_type: LOCKED
- content_type: Conferences
-
abstract: A depletion-mode MOS (DMOS) capacitor
modeling methodology with high accuracy and feasibility is proposed.
Currently, it is lack of compact model relevant DMOS capacitor modeling
but it is significant importance in A/D converters (ADCs) for CMOS image
sensor circuit. This modeling methodology not only could provide good
accuracy on geometry scaling but also with voltage and temperature
sensitivity.
- article_number: 7919748
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7919748
-
html_url:
https://ieeexplore.ieee.org/document/7919748/
-
abstract_url:
https://ieeexplore.ieee.org/document/7919748/
-
publication_title: 2017 China Semiconductor Technology
International Conference (CSTIC)
- conference_location: Shanghai
- conference_dates: 12-13 March 2017
- publication_number: 7912712
- is_number: 7919727
- publication_year: 2017
- publication_date: 12-13 March 2017
- start_page: 1
- end_page: 3
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 381
- insert_date: 20170508
-
index_terms:
-
ieee_terms:
-
dynamic_index_terms:
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Modeling Methodology
- Temperature Coefficient
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-5090-6695-7,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-5090-6694-0,
isbnType: New-2005
-
authors:
-
Author Name: Chien-Lung Tseng
Affiliation: Technology R&D, Semiconductor
Manufacturing International Corporation, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37087647717
ID: 37087647717
Order: 1
Author Affiliations:
-
Technology R&D, Semiconductor Manufacturing International
Corporation, Shanghai, China
-
Author Name: Yuan Sheng Wang
Affiliation: Technology R&D, Semiconductor
Manufacturing International Corporation, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37087750682
ID: 37087750682
Order: 2
Author Affiliations:
-
Technology R&D, Semiconductor Manufacturing International
Corporation, Shanghai, China
Image Sensor
- sensor_type: CMOS
- resolution: 14 bits
- dynamic_range: Not specified
- pixel_size: Not specified
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Used in CMOS image sensor circuits for
ADCs
-
benefits: High-density capacitance compared with MOM
and MIM capacitors.
Supporting Organizations
- supported_by: SMIC modeling team
Manuscript Details
- publication_date: 12-13 March 2017
Relevancy Score
- score: 8
-
missing_fields:
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
request_b632b045-042b-4731-a650-47a8cad1d408-depletionmode_mos_capacitor_modeling_investigation.json