Delamination Analysis And Reliability Design For Cmos Image Sensors
Packages
- doi: 10.1109/ICEPT.2013.6756522
-
title: Delamination analysis and reliability design for
CMOS image sensors packages
- publisher: IEEE
- isbn: 978-1-4799-0498-3
- issn:
- rank: 2066
- access_type: LOCKED
- content_type: Conferences
-
abstract: Through-silicon via (TSV) technology known as
the core of the next generation of 3D integration has drawn more and
more attention. However, due to its high cost and yield problems, it has
not been used widely. Nevertheless, TSV is becoming a main stream
interconnect method for CIS (CMOS image sensors) packaging. In order to
assess the reliability behavior of typical CMOS image sensor such as
delamination during CIS packaging and reliability testing, CSP packages
are subjected to JEDEC reliability test to identify the failure modes
and failure locations. According to the subsequent cross-section
analysis, delamination occurs between the bonding attach and oxide
layer. The glass crack after reliability test is observed, the crack
propagates from the interface between the glass and cavity wall into the
interior of the glass. Regarding the experimental results, a plane
strain finite element model (FEM) is established to study the underlying
mechanisms of reliability problems. According to the FEM results, the
maximum shear stress in cavity wall occurs at the outside interface
between cavity wall and the glass. The maximum shear stress in bonding
attach occurs at the outside interface between the bonding attach and
oxide layer. Besides, the maximum stress occurs in the low-temperature
phase, which is correlated well with the SEM results. Based on the FEM
analysis, the influence of geometric parameters such as the height and
width of cavity wall, the thickness of the backside SMF, the thickness
of silicon are also investigated to develop the guidelines for CIS
packaging design.
- article_number: 6756522
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6756522
-
html_url:
https://ieeexplore.ieee.org/document/6756522/
-
abstract_url:
https://ieeexplore.ieee.org/document/6756522/
-
publication_title: 2013 14th International Conference
on Electronic Packaging Technology
- conference_location: Dalian, China
- conference_dates: 11-14 Aug. 2013
- publication_number: 6745316
- is_number: 6756403
- publication_year: 2013
- publication_date: 11-14 Aug. 2013
- start_page: 507
- end_page: 511
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 541
- insert_date: 20140306
-
index_terms:
-
ieee_terms:
- Cavity resonators
- Glass
- Stress
- Reliability
- Finite element analysis
- Silicon
- Bonding
-
author_terms:
- CIS
- Through-silicon-via(TSV)
- Delamination
- Finite element method
-
dynamic_index_terms:
- Delamination
- Image Sensor
- Camera Sensor
- Scanning Electron Microscopy
- Finite Element
- Shear Stress
- Reliability Test
- Finite Element Model
- FE Model
- Oxide Layer
- Maximum Stress
- Design Guidelines
- Scanning Electron Microscopy Results
- Maximum Shear Stress
- Low-temperature Phase
- Glass Wall
- Problems Of High Cost
- Relative Humidity
- Preconditioning
- Finite Element Method
- Thermal Expansion
- Coefficient Of Thermal Expansion
- Stress Intensity
- Lower Levels Of Stress
- Mirror Symmetry
- Symmetry Plane
- Reflection Symmetry
- Mirror-symmetric
- Photolithography Process
- Sensor Behavior
- Sense Of Behaviour
- Temperature Cycles
-
isbn_formats:
-
format: Electronic ISBN,
value: 978-1-4799-0498-3,
isbnType: New-2005
-
authors:
-
Author Name: Wu Wei
Affiliation: College of Mechanical Engineering and
Applied Electronics Technology Beijing University of Technology,
Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/38561813400
ID: 38561813400
Order: 1
Author Affiliations:
-
College of Mechanical Engineering and Applied Electronics
Technology Beijing University of Technology, Beijing, China
-
Author Name: Qin Fei
Affiliation: College of Mechanical Engineering and
Applied Electronics Technology Beijing University of Technology,
Beijing, China
Author URL:
https://ieeexplore.ieee.org/author/37690124700
ID: 37690124700
Order: 2
Author Affiliations:
-
College of Mechanical Engineering and Applied Electronics
Technology Beijing University of Technology, Beijing, China
-
Author Name: Zhu Wenhui
Affiliation: Packaging Technology Research
Institute Tian Shui Hua Tian Technology Co. LTD, Tianshui, China
Author URL:
https://ieeexplore.ieee.org/author/38479411300
ID: 38479411300
Order: 3
Author Affiliations:
-
Packaging Technology Research Institute Tian Shui Hua Tian
Technology Co. LTD, Tianshui, China
Image Sensor
- sensor_type: CMOS
- resolution: Not specified in the paper
- dynamic_range: Not specified in the paper
- pixel_size: Not specified in the paper
- dark_current: Not specified in the paper
Optical Data
- focal_length: Not specified in the paper
- aperture: Not specified in the paper
- field_of_view: Not specified in the paper
- distortion: Not specified in the paper
Performance Metrics
- frame_rate: Not specified in the paper
-
signal_to_noise_ratio: Not specified in the paper
- sensitivity: Not specified in the paper
- shutter_speed: Not specified in the paper
- power_consumption: Not specified in the paper
- noise: Not specified in the paper
Applications & Benefits
-
cell_imaging: CMOS image sensors are used in a variety
of applications such as smartphones, medical devices, automotive
systems, and high-end cameras.
-
benefits: Faster, smaller, more integrated, and more
power-efficient compared to CCD sensors.
Supporting Organizations
-
supported_by: National Natural Science Foundation of
China (NSFC) under the Grant No. 11272018.
Manuscript Details
- publication_date: 11-14 Aug. 2013
Relevancy Score
- score: 8
-
missing_fields:
- fill factor
- quantum efficiency
- readout speed
- temporal noise
- fixed-pattern noise
- analog-to-digital conversion techniques
- microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
Processed JSON Filename
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