Decrease Of Dark Current By Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation

• doi: 10.1109/LED.2010.2070870
• title: Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation
• publisher: IEEE
• isbn:
• issn: 1558-0563
• rank: 2055
• access_type: LOCKED
• content_type: Journals
• abstract: The local increase of the threshold voltage of the transfer transistor is proposed to reduce the dark current in a CMOS image sensor. It is suggested that the local increase of the threshold voltage controls the partition noise which contributes to the dark current. The dark current is shown to be reduced considerably by the proposed structure. The proposed method induces little change in the hot carrier reliability as well as in the device performance.
• article_number: 5595091
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5595091
• html_url: https://ieeexplore.ieee.org/document/5595091/
• abstract_url: https://ieeexplore.ieee.org/document/5595091/
• publication_title: IEEE Electron Device Letters
• conference_location:
• conference_dates:
• publication_number: 55
• is_number: 5607217
• publication_year: 2010
• publication_date: Nov. 2010
• start_page: 1278
• end_page: 1280
• citing_paper_count: 11
• citing_patent_count: 0
• download_count: 895
• insert_date: 20101007
• index_terms:
  • ieee_terms:
    • Dark current
    • Threshold voltage
    • Logic gates
    • Pixel
    • Noise
    • Degradation
    • Performance evaluation
  • author_terms:
    • CMOS image sensor (CIS)
    • dark current
    • hot pixels
    • partition noise
    • transfer gate (TX)
    • TX high VT length
  • dynamic_index_terms:
    • Dark Current
    • Partition Noise
    • Device Performance
    • Image Sensor
    • Camera Sensor
    • Threshold Voltage
    • Hot Electrons
    • Hot Carriers
    • High Voltage
    • Higher Tendency
    • Current Decreases
    • Switching Off
    • Gate Length
    • Device Degradation
• authors:
  • Author Name: Seong-Hyung Park
    Affiliation: Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37067897000
    ID: 37067897000
    Order: 1
    Author Affiliations:
    • Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
  • Author Name: Jung-Deuk Bok
    Affiliation: Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37533574900
    ID: 37533574900
    Order: 2
    Author Affiliations:
    • Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
  • Author Name: Hyuk-Min Kwon
    Affiliation: Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37533579300
    ID: 37533579300
    Order: 3
    Author Affiliations:
    • Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
  • Author Name: Woon-Il Choi
    Affiliation: Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37966480500
    ID: 37966480500
    Order: 4
    Author Affiliations:
    • Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
  • Author Name: Man-Lyun Ha
    Affiliation: Dongbu Hitek Company Limited, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37957868600
    ID: 37957868600
    Order: 5
    Author Affiliations:
    • Dongbu Hitek Company Limited, Seoul, South Korea
  • Author Name: Ju-Il Lee
    Affiliation: Dongbu Hitek Company Limited, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37964845800
    ID: 37964845800
    Order: 6
    Author Affiliations:
    • Dongbu Hitek Company Limited, Seoul, South Korea
  • Author Name: Hi-Deok Lee
    Affiliation: Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37280122200
    ID: 37280122200
    Order: 7
    Author Affiliations:
    • Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: reduced by the proposed structure

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: temporal noise and fixed-pattern noise

Applications & Benefits

• cell_imaging: applications in digital cameras and scanning devices
• benefits: improved image quality by reducing dark current and partition noise

Supporting Organizations

• supported_by: Ministry of Knowledge Economy, Korea Industrial Technology Foundation, Dongbu Hitek

Manuscript Details

• publication_date: Nov. 2010

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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