Dark Current Spectroscopy In Neutron Proton And Ion Irradiated Cmos Image Sensors From Point Defects To Clusters

• doi: 10.1109/TNS.2016.2641479
• title: Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 2040
• access_type: LOCKED
• content_type: Journals
• abstract: Dark current spectroscopy is tested on twenty CMOS image sensors irradiated with protons, neutrons and various ions at different energies. The aim of this work is to differentiate the effect of coulomb and nuclear interactions on the radiation-induced dark current distribution and to identify the main radiation-induced defects responsible for the dark current increase for each type of interaction. For low-energy protons and low-energy light ions (which produce well-separated low energy coulomb interactions), we find that most of the pixels belong to a quantized dark current spectrum at low dark current. In these pixels, the dark current increase seems mainly dominated by specific point defects such as the divacancy and the vacancy-phosphorus complex. Thus, these simple defects seem to form when the displacement damage is rather low and sparse. On the contrary, for nuclear interactions (with neutrons or high-energy protons) producing high coulomb NIEL silicon PKAs or for low energy heavy ions (also having high coulomb NIEL), the DCS spectrum is not visible and all the pixels belong to an exponential hot pixel tail which extends to very high dark current. In these pixels, the dark current increase is mainly dominated by defects with close-to-midgap energy levels. These defects seem more complex than point defects because they can have many different generation rates (explaining the smooth hot pixel tail) and because they tend to form when the displacement damage is high and dense.
• article_number: 7790848
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7790848
• html_url: https://ieeexplore.ieee.org/document/7790848/
• abstract_url: https://ieeexplore.ieee.org/document/7790848/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 7869239
• publication_year: 2017
• publication_date: Jan. 2017
• start_page: 27
• end_page: 37
• citing_paper_count: 26
• citing_patent_count: 0
• download_count: 1035
• insert_date: 20161219
• index_terms:
  • ieee_terms:
    • Dark current
    • Neutrons
    • Ions
    • Silicon
    • Protons
    • Radiation effects
    • Photodiodes
  • author_terms:
    • Activation energy
    • annealing
    • clusters
    • CMOS image sensor (CIS)
    • coulomb interactions
    • dark current distribution
    • dark current spectroscopy (DCS)
    • elastic and inelastic nuclear interactions
    • irradiation
    • NIEL
    • pinned photodiode (PPD)
    • point defects
    • radiation-induced defects
    • Rutherford scattering
    • traps
  • dynamic_index_terms:
    • Point Defects
    • Dark Current
    • Dark Current Spectroscopy
    • Electrostatic Interactions
    • Electrostatic Attraction
    • Coulombic
    • Energy Levels
    • Heavy Ions
    • Heavy-ion Collisions
    • Specific Defects
    • Main Defect
    • Main Flaw
    • Exponential Tail
    • Low-energy Ion
    • Light Ions
    • Low Dark Current
    • High-energy Protons
    • Activation Energy
    • Probability Density Function
    • Similar Shape
    • Similar Figure
    • Similar Geometry
    • Similar Mean
    • Ionization Energy
    • Ionization Potential
    • Ion Mass
    • MeV Protons
    • Neutron Irradiation
    • Neutron Radiation
    • Inverse Slope
    • Dark Energy
    • Bulk Silicon
    • Types Of Defects
    • Fault Types
    • PIN Photodiode
    • Current Energy
    • Electric Field Enhancement
    • Part Of Distribution
• authors:
  • Author Name: Jean-Marc Belloir
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085385939
    ID: 37085385939
    Order: 1
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
  • Author Name: Vincent Goiffon
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Cédric Virmontois
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38327725000
    ID: 38327725000
    Order: 3
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Philippe Paillet
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37283486900
    ID: 37283486900
    Order: 4
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Mélanie Raine
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37540551800
    ID: 37540551800
    Order: 5
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Romain Molina
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38285932500
    ID: 38285932500
    Order: 6
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
  • Author Name: Clémentine Durnez
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37085480035
    ID: 37085480035
    Order: 7
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Olivier Gilard
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37266223900
    ID: 37266223900
    Order: 8
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 9
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France

Image Sensor

• sensor_type: CMOS (Complementary Metal-Oxide-Semiconductor)
• resolution: Four-transistor (4T) Pinned PhotoDiode (PPD)
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: CIS 1-15: 6 e−/s; CIS A-E: 3 e−/s before irradiation, increased after irradiation depending on parameter variations reported in the text, with higher variations noted at different conditions of irradiation and annealing stages.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Enables digital imaging in smartphones, medical devices, automotive systems, and other various applications.
• benefits: CMOS image sensors provide high sensitivity and dynamic range, allowing for improved image quality in various lighting conditions.

Supporting Organizations

• supported_by: ISAE, CEA, CNES

Manuscript Details

• publication_date: Jan. 2017

Relevancy Score

• score: 10
• missing_fields:
  • dark_current_increase_post_irradiation
  • quantum_efficiency
  • Fill_factor
  • readout_speed
  • microlenses_usage
  • on-chip_colour_filters
  • global_shutters
  • rolling_shutters
  • backside_illumination

Processed JSON Filename

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