Dark Current Saturation In Cmos Image Sensors

• doi: 10.1109/EDSSC.2017.8126456
• title: Dark current saturation in CMOS image sensors
• publisher: IEEE
• isbn: 978-1-5386-2908-6
• issn:
• rank: 2046
• access_type: LOCKED
• content_type: Conferences
• abstract: The dark current in a photodiode limits the use of CMOS image sensor in low noise applications. The dark current is due to the generation-recombination centers present on the surface, space charge region and the bulk. The generation-recombination current depends on the number of active traps present, capture cross-section area of the traps and the operating temperature. In this work we show that the generation-recombination current due to increase in depletion width under transfer gate (TG) does not increase indefinitely and saturates. The saturation of the generation-recombination current is useful in estimating the deep level trap concentration in a CMOS pinned photodiode.
• article_number: 8126456
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8126456
• html_url: https://ieeexplore.ieee.org/document/8126456/
• abstract_url: https://ieeexplore.ieee.org/document/8126456/
• publication_title: 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)
• conference_location: Hsinchu, Taiwan
• conference_dates: 18-20 Oct. 2017
• publication_number: 8118202
• is_number: 8126392
• publication_year: 2017
• publication_date: 18-20 Oct. 2017
• start_page: 1
• end_page: 2
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 535
• insert_date: 20171204
• index_terms:
  • ieee_terms:
    • Dark current
    • Photodiodes
    • CMOS image sensors
    • Logic gates
    • Temperature dependence
    • Spontaneous emission
    • Space charge
  • dynamic_index_terms:
    • Dark Current
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Capture Cross Section
    • PIN Photodiode
    • Depletion Width
    • Activation Energy
    • Increase In Length
    • Current Increases
    • Recombination Lifetime
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-2908-6, isbnType: New-2005
  • format: USB ISBN, value: 978-1-5386-2906-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-2907-9, isbnType: New-2005
• authors:
  • Author Name: Mukul Sarkar
    Affiliation: Indian Institute of Technology Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37394227700
    ID: 37394227700
    Order: 1
    Author Affiliations:
    • Indian Institute of Technology Delhi, New Delhi, India

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: High (specific value not detailed)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Enabled through reduced dark current and improved performance in low light applications.
• benefits: Higher sensitivity and reduced dark current can enhance imaging capabilities in smartphones, medical devices, and automotive systems.

Supporting Organizations

• supported_by: Indian Institute of Technology Delhi

Manuscript Details

• publication_date: 18-20 Oct. 2017

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_1e9fa726-121d-4a61-871d-e355ad41a232-dark_current_saturation_in_cmos_image_sensors.json