Dark Current Of The Solidstate Imagers At High Temperature
- doi: 10.1109/EIConRus.2017.7910636
-
title: Dark current of the solid-state imagers at high
temperature
- publisher: IEEE
- isbn: 978-1-5090-4866-3
- issn:
- rank: 2045
- access_type: LOCKED
- content_type: Conferences
-
abstract: The theoretical analysis of dark currents of
area charge-coupled devices (CCD) and CMOS image sensor at high
temperatures from 60 to 150 degrees Celsius is carried out. It is shown,
that reduction of accumulation time reduces dark currents of
photodiodes. Transfer registers dark currents is dominating component in
area CCD and defined by temporary parameters of scan. In CMOS image
sensor with global shutter the high level of dark current is caused by
an element of memory in the pixel. This a component is defined by
temporary parameters of scan and coordinates of elements. Thus, CMOS
image sensor with the rolling shutter is an optimum choice in case of
design of high-temperature Television cameras. Experimental studies are
conducted. Theoretical data are confirmed.
- article_number: 7910636
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7910636
-
html_url:
https://ieeexplore.ieee.org/document/7910636/
-
abstract_url:
https://ieeexplore.ieee.org/document/7910636/
-
publication_title: 2017 IEEE Conference of Russian
Young Researchers in Electrical and Electronic Engineering (EIConRus)
-
conference_location: St. Petersburg and Moscow, Russia
- conference_dates: 1-3 Feb. 2017
- publication_number: 7899013
- is_number: 7910472
- publication_year: 2017
- publication_date: 1-3 Feb. 2017
- start_page: 635
- end_page: 638
- citing_paper_count: 2
- citing_patent_count: 0
- download_count: 302
- insert_date: 20170427
-
index_terms:
-
ieee_terms:
- Dark current
- CMOS image sensors
- Photodiodes
- Charge coupled devices
- Temperature sensors
- TV
- Cameras
-
author_terms:
- Area CCD
- CMOS image sensor
- Dark current
- High temperature
- Electronic Shutter
-
dynamic_index_terms:
- Dark Current
- CCD Camera
- Charge-coupled Device
- Photodiode
- Image Sensor
- Camera Sensor
- Memory Elements
- Coordinates Of Elements
- Rolling Shutter
- Increase In Temperature
- Thermal Power Plants
- Thermal Generation
- Thermal Plants
- Video Signal
- Accumulation In Lines
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-5090-4866-3,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-5090-4865-6,
isbnType: New-2005
-
authors:
-
Author Name: Pavel S. Baranov
Affiliation: Department of Television and Video
Engineering, St. Petersburg Electrotechnical University «LETI», St.
Petersburg, Russia
Author URL:
https://ieeexplore.ieee.org/author/37085491748
ID: 37085491748
Order: 1
Author Affiliations:
-
Department of Television and Video Engineering, St. Petersburg
Electrotechnical University «LETI», St. Petersburg, Russia
-
Author Name: Vladimir T. Litvin
Affiliation: Department of Radio Engineering and
Information Technologies, St.Petersburg State University of Film and
Television, St. Petersburg, Russia
Author URL:
https://ieeexplore.ieee.org/author/37087978244
ID: 37087978244
Order: 2
Author Affiliations:
-
Department of Radio Engineering and Information Technologies,
St.Petersburg State University of Film and Television, St.
Petersburg, Russia
-
Author Name: Darya A. Belous
Affiliation: Department of Oil and Gas Fields
Development and Operation, National Mineral Resources University,
St. Petersburg, Russia
Author URL:
https://ieeexplore.ieee.org/author/37087979511
ID: 37087979511
Order: 3
Author Affiliations:
-
Department of Oil and Gas Fields Development and Operation,
National Mineral Resources University, St. Petersburg, Russia
-
Author Name: Andrey A. Mantsvetov
Affiliation: Department of Television and Video
Engineering, St. Petersburg Electrotechnical University «LETI», St.
Petersburg, Russia
Author URL:
https://ieeexplore.ieee.org/author/37086155686
ID: 37086155686
Order: 4
Author Affiliations:
-
Department of Television and Video Engineering, St. Petersburg
Electrotechnical University «LETI», St. Petersburg, Russia
Image Sensor
- sensor_type: CMOS
- resolution: 1920x1200
- dynamic_range: not specified
- pixel_size: 2.8x2.8 m
- dark_current: 4 electrons at +60 °C
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
Applications & Benefits
- cell_imaging: not specified
-
benefits: High-temperature applications, reduced dark
current with accumulation time reduction
Supporting Organizations
- supported_by: not specified
Manuscript Details
- publication_date: 1-3 Feb. 2017
Relevancy Score
- score: 9
-
missing_fields:
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
- cell_imaging
Processed JSON Filename
request_cd492f44-fe4a-45bf-aecc-e8b7e0e3ab93-dark_current_of_the_solidstate_imagers_at_high_temperature.json