Cu Microstructure Of High Density Cu Hybrid Bonding Interconnection

• doi: 10.1109/ECTC.2019.00101
• title: Cu Microstructure of High Density Cu Hybrid Bonding Interconnection
• publisher: IEEE
• isbn: 978-1-7281-1500-9
• issn: 0569-5503
• rank: 2020
• access_type: LOCKED
• content_type: Conferences
• abstract: The scaling of semiconductor device below 10nm has faced the higher process difficulty and longer development periods. Three-dimensional integrated circuits (3D IC) using chip partitioning and wafer-to-wafer bonding have been acknowledged as the next generation semiconductor stacking technology because of smaller form factor, higher density integration and higher performance compared to same-node devices. Wafer-to-wafer bonding is widely used in stacked CMOS image sensor, that is, the bonding between pixel and logic wafer, and this technology has the potential to apply other semiconductor devices. Cu-Cu hybrid bonding has achieved by simultaneous wafer bonding of metal (Cu-Cu) and dielectric materials. In this study, it is investigated on the microstructure of Cu pad for Cu-Cu bonding after post-electroplating and post-bonding annealing process. The Cu grain size distribution and orientation are analyzed with different anneal temperature, which is applied on electroplated Cu, and with additional heat treatment as post-bonding process. The effect of pad size as well as the position within pattern array on Cu microstructure is also studied as the bonding pad is required smaller and smaller size for high density bonding. After Cu-Cu bonding, the cross-section analysis of bonding interface is carried out to see inter-diffusion of Cu atoms across the opposite Cu pad. Cu-Cu hybrid bonding is applied to test vehicle having the daisy chain of 2.4 million. The electrical resistance is measured before and after thermal stress and the Cu-Cu bonding interface is confirmed as robust structure.
• article_number: 8811263
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8811263
• html_url: https://ieeexplore.ieee.org/document/8811263/
• abstract_url: https://ieeexplore.ieee.org/document/8811263/
• publication_title: 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
• conference_location: Las Vegas, NV, USA
• conference_dates: 28-31 May 2019
• publication_number: 8795274
• is_number: 8811008
• publication_year: 2019
• publication_date: 28-31 May 2019
• start_page: 636
• end_page: 641
• citing_paper_count: 27
• citing_patent_count: 0
• download_count: 4668
• insert_date: 20190826
• index_terms:
  • ieee_terms:
    • Bonding
    • Annealing
    • Grain size
    • Dielectrics
    • Surface treatment
    • Plasma temperature
    • Resistance
  • author_terms:
    • Hybrid bonding, Cu-Cu bonding, Cu interface, Cu interdiffusion, Cu grain orientation, reliability, stress migration
  • dynamic_index_terms:
    • Impedance
    • Resistivity
    • Size Distribution
    • Grain Size
    • Particle Size Distribution
    • Grain Size Distribution
    • Annealing Temperature
    • Thermal Stress
    • Heat Load
    • Semiconductor Devices
    • Test Vehicle
    • Array Pattern
    • Padding Size
    • Bond Strength
    • Bond Energy
    • Process Flow
    • Dielectric Layer
    • Insulation Layer
    • Focused Ion Beam
    • Average Grain
    • Average Grain Size
    • Electron Backscatter Diffraction
    • EBSD
    • Physical Vapor Deposition
    • Physical Vapour Deposition
    • Changes In Grain Size
    • Electric Reliability
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-1500-9, isbnType: New-2005
  • format: USB ISBN, value: 978-1-7281-1498-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-1499-6, isbnType: New-2005
• authors:
  • Author Name: Seokho Kim
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37963192100
    ID: 37963192100
    Order: 1
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Pilkyu Kang
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37086949227
    ID: 37086949227
    Order: 2
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Taeyeong Kim
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37086951934
    ID: 37086951934
    Order: 3
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Kyuha Lee
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37086952204
    ID: 37086952204
    Order: 4
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Joohee Jang
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37086949973
    ID: 37086949973
    Order: 5
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Kwangjin Moon
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37435911200
    ID: 37435911200
    Order: 6
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Hoonjoo Na
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37953674500
    ID: 37953674500
    Order: 7
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Sangjin Hyun
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37270256600
    ID: 37270256600
    Order: 8
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
  • Author Name: Kihyun Hwang
    Affiliation: Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea
    Author URL: https://ieeexplore.ieee.org/author/37309298100
    ID: 37309298100
    Order: 9
    Author Affiliations:
    • Semiconductor Research Center, Samsung Electronics, Gyeonggi-do, Republic of Korea

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Application in CMOS image sensors for digital imaging.
• benefits: Enables digital imaging in smartphones, medical devices, automotive systems, etc.

Supporting Organizations

• supported_by: Samsung Electronics, Semiconductor Research Center

Manuscript Details

• publication_date: 28-31 May 2019

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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