Creating 35 Mm Camera Active Pixel Sensors

• doi: 10.1109/DFTVS.1999.802865
• title: Creating 35 mm camera active pixel sensors
• publisher: IEEE
• isbn: 0-7695-0325-x
• issn: 1550-5774
• rank: 2014
• access_type: LOCKED
• content_type: Conferences
• abstract: A 36/spl times/24 mm active pixel sensor imaging area device is studied which would be ideal for use with standard 35 mm cameras. By applying multichip methods to active pixel sensors, the 39/spl times/30 mm system contains on board all the control circuitry and A/D converters, so the system outputs digital data. The large area requires a redundancy of design for a high yield. This starts with the active pixel cell, which able to withstand several defects and still be repairable, which CCD cells are not. The whole system is targeted at preventing bad rows or columns. By using spares in the row and column circuitry, as well as spare A/D converters the chip yield is only limited by a relatively small logic and control block. With repairs the yield of this 11.7 sq. cm system goes from almost nil to more than 80%-93% with modest defect densities of 1.5 to 0.5 per sq. cm. By being a retrofit for current 35 mm cameras, and having larger photodiode pixels than current APS's this CMOS device would be nearly as sensitive as CCD's but at much lower production costs and much higher yields.
• article_number: 802865
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=802865
• html_url: https://ieeexplore.ieee.org/document/802865/
• abstract_url: https://ieeexplore.ieee.org/document/802865/
• publication_title: Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)
• conference_location: Albuquerque, NM, USA
• conference_dates: 1-3 Nov. 1999
• publication_number: 6514
• is_number: 17398
• publication_year: 1999
• publication_date: 1-3 Nov. 1999
• start_page: 22
• end_page: 30
• citing_paper_count: 13
• citing_patent_count: 6
• download_count: 93
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Cameras
    • Pixel
    • Image sensors
    • Sensor systems
    • Control systems
    • Charge coupled devices
    • Logic circuits
    • CMOS image sensors
    • Photodiodes
    • Production
  • dynamic_index_terms:
    • Active Sensors
    • Sensor Pixel
    • Active Pixel Sensor
    • Control Circuitry
    • Digital Camera
    • Digital Images
    • Pixel Size
    • Large Systems
    • Ground Plane
    • Floor Plan
    • Pixel Area
    • Control Sections
    • Single Chip
    • Chip Area
    • Remote Memory
    • Cache Memory
    • F-number
    • F-stop
    • Relative Aperture
    • Negative Binomial Analysis
    • Shift Register
    • Output Line
    • Sense Amplifier
    • Double Exposure
• isbn_formats:
  • format: Print ISBN, value: 0-7695-0325-x, isbnType: Historical
• authors:
  • Author Name: G. Chapman
    Affiliation: School of Engineering Science, Simon Fraser University, Burnaby, BC, Canada
    Author URL: https://ieeexplore.ieee.org/author/37273891800
    ID: 37273891800
    Order: 1
    Author Affiliations:
    • School of Engineering Science, Simon Fraser University, Burnaby, BC, Canada
  • Author Name: Y. Audet
    Affiliation: Mitel Semiconductor Limited, Kanata, ONT, Canada
    Author URL: https://ieeexplore.ieee.org/author/37273900300
    ID: 37273900300
    Order: 2
    Author Affiliations:
    • Mitel Semiconductor Limited, Kanata, ONT, Canada

Image Sensor

• sensor_type: CMOS Active Pixel Sensor (APS)
• resolution: 768x1024
• dynamic_range: Not explicitly stated
• pixel_size: 14x14 micrometres (µm)
• dark_current: Not explicitly stated, but discussed in context of sensitivity and defect handling in pixels (single pixel errors tolerated)\nNot quantified in the text; potential to allow low defect density yields to be acceptable (0.5 to 1.5 defects/cm²) based on repair strategy used in design and layout.

Optical Data

• focal_length: Not explicitly stated
• aperture: Not explicitly stated, though larger photodiodes indicate improved optical performance
• field_of_view: Not explicitly stated
• distortion: Not explicitly stated

Performance Metrics

• frame_rate: Not explicitly stated, but fast A/D conversion methods suggested for maintaining rates
• signal_to_noise_ratio: Not explicitly stated, but high sensitivity relative to CCDs mentioned
• sensitivity: Approximate equivalence to CCDs in sensitivity with larger pixel areas
• shutter_speed: Not explicitly stated
• power_consumption: Lower than CCDs, specific values not provided
• noise: Not explicitly stated, mentions of signal noise with possible reduced pixel sensitivity if one or more photodiodes fail.

Applications & Benefits

• cell_imaging: The CMOS APS is designed to be a retrofit for existing professional 35 mm cameras, potentially enhancing digital imaging capabilities while being cost-effective and sensitive like CCDs.
• benefits: Higher yield rates at modest defect densities (80%-93%), reduced costs due to integrated circuitry and repairs, and the ability to utilize existing photographic lenses and accessories.

Supporting Organizations

• supported_by: Mitel Semiconductor and Simon Fraser University

Manuscript Details

• publication_date: 1-3 Nov. 1999

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • dynamic_range
  • dark_current
  • frame_rate
  • noise

Processed JSON Filename

request_41699602-b270-4b4d-9c74-ed3520d65af0-creating_35_mm_camera_active_pixel_sensors.json