Copper Interconnect Technology For The 22 Nm Node

• doi: 10.1109/VTSA.2011.5872228
• title: Copper interconnect technology for the 22 nm node
• publisher: IEEE
• isbn: 978-1-4244-8491-1
• issn: 1524-766X
• partnum: 11TH9169
• rank: 2010
• access_type: LOCKED
• content_type: Conferences
• abstract: On-chip copper interconnects have gained wide acceptance in the microelectronics industry due to improved resistivity and reliability compared to Al interconnects. Initially, copper interconnects were only used for high performance logic circuits. However, Cu interconnects are now used in a wide variety of integrated circuits, including dynamic random access memories (DRAM), RF circuits, and CMOS image sensors. Copper interconnects will continue to be used for the 32 and 22nm technology nodes. However, there are many challenges with implementation of Cu interconnects at these nodes, including increased resistivity, integration with porous low-k materials, and reliability. In addition, for RF circuits, integration of passive devices is required. In this paper, each of these topics is addressed.
• article_number: 5872228
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5872228
• html_url: https://ieeexplore.ieee.org/document/5872228/
• abstract_url: https://ieeexplore.ieee.org/document/5872228/
• publication_title: Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
• conference_location: Hsinchu, Taiwan
• conference_dates: 25-27 April 2011
• publication_number: 5779880
• is_number: 5872202
• publication_year: 2011
• publication_date: 25-27 April 2011
• start_page: 1
• end_page: 2
• citing_paper_count: 4
• citing_patent_count: 1
• download_count: 1171
• insert_date: 20110609
• index_terms:
  • ieee_terms:
    • Copper
    • Integrated circuit interconnections
    • Conductivity
    • Dielectric constant
    • Capacitors
  • dynamic_index_terms:
    • Cu Interconnects
    • Copper Chips
    • Copper Interconnects
    • Impedance
    • Resistivity
    • Porous Media
    • Porous Materials
    • Porous Matrix
    • Random Access Memory
    • Integration Of Devices
    • Passive Devices
    • Technology Node
    • Radio Frequency Devices
    • RF Circuit
    • Radio Electronics
    • Dielectric Constant
    • Relative Permittivity
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • Local Method
    • Air Gap
    • Atomic Layer Deposition
    • Reactive Ion Etching
    • Low Dielectric Constant
    • Si O Bond
    • Packaging Process
    • Silicon Crystal
    • Single-crystal Silicon
    • Refractory Metals
    • Refractory Alloys
• isbn_formats:
  • format: CD, value: 978-1-4244-8491-1, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-8493-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-8492-8, isbnType: New-2005
• authors:
  • Author Name: J. P. Gambino
    Affiliation: IBM Microelectronics, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/37294224500
    ID: 37294224500
    Order: 1
    Author Affiliations:
    • IBM Microelectronics, VT, USA

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: not specified

Supporting Organizations

• supported_by: not specified

Manuscript Details

• publication_date: 25-27 April 2011

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits
  • supported_by
  • publication_date

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