Conformal Doping With High Dopant Concentration For Np And Pn Si Junctions In 3D Devices Using Solgel Coating And Flash Lamp Annealing

• doi: 10.1109/IIT.2018.8807947
• title: Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing
• publisher: IEEE
• isbn: 978-1-5386-6830-6
• issn:
• rank: 1995
• access_type: LOCKED
• content_type: Conferences
• abstract: Flash Lamp Annealing (FLA) is a well-known technique for millisecond annealing. In forming ultra-shallow junctions, FLA can provide high activation levels with precise diffusion control in the nanometer range. Currently, devices with 3D structures require conformal doping as well as diffusion control. Sol-Gel Coating (SGC / Tokyo Ohka Kogyo Co., Ltd.) has a special feature, in that a very thin film on the nanometer scale can be deposited on a 3D structure. In this work, we used SGC as a dopant source and FLA to demonstrate that highly activated junctions can be formed, and effective doping can be realized. Thus, this doping technique can be applied to advanced 3D devices, such as logic, memory and CMOS image sensor.
• article_number: 8807947
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8807947
• html_url: https://ieeexplore.ieee.org/document/8807947/
• abstract_url: https://ieeexplore.ieee.org/document/8807947/
• publication_title: 2018 22nd International Conference on Ion Implantation Technology (IIT)
• conference_location: Würzburg, Germany
• conference_dates: 16-21 Sept. 2018
• publication_number: 8794648
• is_number: 8807892
• publication_year: 2018
• publication_date: 16-21 Sept. 2018
• start_page: 346
• end_page: 348
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 109
• insert_date: 20190822
• index_terms:
  • ieee_terms:
    • Junctions
    • Silicon
    • Annealing
    • Doping
    • Coatings
    • Arsenic
    • Three-dimensional displays
  • author_terms:
    • flash lamp annealing
    • conformal doping
    • sol-gel coating
    • forming gas
  • dynamic_index_terms:
    • Flash Lamp
    • High Doping Concentration
    • Sol Gel Coatings
    • Si Junctions
    • Flash Lamp Annealing
    • Conformal Doping
    • 3D Structure
    • High Levels Of Activity
    • Diffusion Controlled
    • Nanometer Range
    • Levels In Samples
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Spin-coated
    • Spin Coating
    • Secondary Ion Mass Spectrometry
    • Capping Layer
    • Ambient Gas
    • P-type Si
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-6830-6, isbnType: New-2005
  • format: DVD ISBN, value: 978-1-5386-6827-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-5386-6828-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-6829-0, isbnType: New-2005
• authors:
  • Author Name: Kazuhiko Fuse
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37085363732
    ID: 37085363732
    Order: 1
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
  • Author Name: Hideaki Tanimura
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37085787095
    ID: 37085787095
    Order: 2
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
  • Author Name: Takayuki Aoyama
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37271053200
    ID: 37271053200
    Order: 3
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
  • Author Name: Shinichi Kato
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37537229800
    ID: 37537229800
    Order: 4
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
  • Author Name: Yoshihide Nozaki
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37086943882
    ID: 37086943882
    Order: 5
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
  • Author Name: Ippei Kobayasi
    Affiliation: SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan
    Author URL: https://ieeexplore.ieee.org/author/37086949113
    ID: 37086949113
    Order: 6
    Author Affiliations:
    • SCREEN Semiconductor Solutions Co. Ltd., Shiga, 522-0292 Japan

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors enable digital imaging in applications such as smartphones, medical devices, and automotive systems.
• benefits: CMOS image sensors convert light into electrical signals, enabling efficient digital imaging.

Supporting Organizations

• supported_by: SCREEN Semiconductor Solutions Co., Ltd.

Manuscript Details

• publication_date: 16-21 Sept. 2018

Relevancy Score

• score: 7
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_2018cad0-9284-416b-92a7-66f3f836343c-conformal_doping_with_high_dopant_concentration_for_np_and_pn_si_junctions_in_3d_devices_using_solgel_coating_and_flash_lamp_annealing.json