Comprehensive Study On Prediction Of Endurance Properties From Breakdown Voltage In Highreliable Sttmram

doi: 10.1109/IRPS48203.2023.10118152
title: Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM
publisher: IEEE
isbn: 978-1-6654-5673-9
issn: 1541-7026
rank: 1981
access_type: LOCKED
content_type: Conferences
abstract: We have comprehensively studied prediction of endurance properties STT-MRAM based on breakdown voltage. First, by using 8Mb test MRAM chip, we clarified that a scale parameter dominating the endurance properties can be well predicted from breakdown voltage (BV) by taking into account a field acceleration parameter. We have also clarified that the field acceleration parameter can be determined by dependence of BV on a voltage sweep rate. Those results indicate that the BV measurements can be used to predict the endurance properties. Based on the results for 8Mb test chip, we have fabricated 44Mb STT-MRAM for buffer memory usage in CMOS image sensor and verified high enough endurance greater than 1010 cycles.
article_number: 10118152
pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10118152
html_url: https://ieeexplore.ieee.org/document/10118152/
abstract_url: https://ieeexplore.ieee.org/document/10118152/
publication_title: 2023 IEEE International Reliability Physics Symposium (IRPS)
conference_location: Monterey, CA, USA
conference_dates: 26-30 March 2023
publication_number: 10117589
is_number: 10117581
publication_year: 2023
publication_date: 26-30 March 2023
start_page: 1
end_page: 5
citing_paper_count: 1
citing_patent_count: 0
download_count: 551
insert_date: 20230515
index_terms:
- ieee_terms:
  - Accelerometers
  - Breakdown voltage
  - Semiconductor device measurement
  - Voltage measurement
  - Electric breakdown
  - Memory management
  - Life estimation
- author_terms:
  - STT-MRAM
  - endurance
  - breakdown voltage
- dynamic_index_terms:
  - Endurance Properties
  - Sweep Rate
  - Test Chip
  - Acceleration Parameter
  - Target Value
  - Shape Parameter
  - Open Voltage
  - Voltage Measurements
  - Voltage Conditions
  - Endurance Cycling
  - Measures Of Endurance
isbn_formats:
- format: Print on Demand(PoD) ISBN, value: 978-1-6654-5673-9, isbnType: New-2005
- format: Electronic ISBN, value: 978-1-6654-5672-2, isbnType: New-2005
authors:
- Author Name: H. Sato
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089365731
  ID: 37089365731
  Order: 1
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: H. M. Shin
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/38236327500
  ID: 38236327500
  Order: 2
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: H. Jung
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37279778900
  ID: 37279778900
  Order: 3
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: S. W. Lee
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089853470
  ID: 37089853470
  Order: 4
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: H. Bae
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089835618
  ID: 37089835618
  Order: 5
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: H. Kwon
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37086137117
  ID: 37086137117
  Order: 6
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: K. H. Ryu
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37592197400
  ID: 37592197400
  Order: 7
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: W. C. Lim
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37858541200
  ID: 37858541200
  Order: 8
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: Y. S. Han
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089836820
  ID: 37089836820
  Order: 9
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: J. H. Jeong
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37278334900
  ID: 37278334900
  Order: 10
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: J. M Lee
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089364133
  ID: 37089364133
  Order: 11
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: D. S. Kim
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37085893193
  ID: 37085893193
  Order: 12
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: K. Lee
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37351732400
  ID: 37351732400
  Order: 13
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: J. H. Lee
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37085685703
  ID: 37085685703
  Order: 14
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: J. H. Park
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37281005500
  ID: 37281005500
  Order: 15
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: Y. J. Song
  Affiliation: R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37281076700
  ID: 37281076700
  Order: 16
  Author Affiliations:
  - R&D Center, Samsung Electronics Co., Hwaseong-si, Korea
- Author Name: Y. Ji
  Affiliation: Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37086375302
  ID: 37086375302
  Order: 17
  Author Affiliations:
  - Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
- Author Name: B. I. Seo
  Affiliation: Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37085813230
  ID: 37085813230
  Order: 18
  Author Affiliations:
  - Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
- Author Name: J.W. Kim
  Affiliation: Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37089654610
  ID: 37089654610
  Order: 19
  Author Affiliations:
  - Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
- Author Name: H. H. Kim
  Affiliation: Foundry Business, Samsung Electronics Co., Yongin-Si, Korea
  Author URL: https://ieeexplore.ieee.org/author/37081179800
  ID: 37081179800
  Order: 20
  Author Affiliations:
  - Foundry Business, Samsung Electronics Co., Yongin-Si, Korea

Image Sensor

sensor_type: CMOS
resolution: 44Mb (for buffer memory in CMOS image sensor)
dynamic_range: Not specified
pixel_size: Not specified
dark_current: Not specified

Optical Data

focal_length: Not specified
aperture: Not specified
field_of_view: Not specified
distortion: Not specified

Performance Metrics

Applications & Benefits

cell_imaging: Buffer memory in CMOS image sensors for improved performance and endurance above 10^10 cycles.
benefits: Reliable enough for use in CMOS image sensors, allowing for enhanced performance in digital imaging applications.

Supporting Organizations

supported_by: Samsung Electronics Co.

Manuscript Details

publication_date: 26-30 March 2023

Relevancy Score

score: 9
missing_fields:
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise

Processed JSON Filename

request_3bc39f56-d05e-4aa1-a521-0d7941ea1a97-comprehensive_study_on_prediction_of_endurance_properties_from_breakdown_voltage_in_highreliable_sttmram.json