Comparison Of Proton Damage Effects In Standard And Enhanced Depletion Cmos Image Sensors

• doi: 10.1109/RADECS.2013.6937445
• title: Comparison of proton damage effects in standard and enhanced depletion CMOS Image Sensors
• publisher: IEEE
• isbn: 978-1-4673-5057-0
• issn:
• rank: 1975
• access_type: LOCKED
• content_type: Conferences
• abstract: A comparison of the proton radiation effects in CMOS Image Sensors (CIS) manufactured using a 0.18 μm process with standard and enhanced depletion is presented. 3 and 4-transistor (3T and 4T) architecture devices with multiple pixel variants are characterized. All devices investigated are back-illuminated. Devices have been produced on 2 different wafer types with different epitaxial (epi) resistivities and thicknesses to compare the effect of standard and enhanced depletion. Devices with a higher resistivity epi will have greater depletion under the photodiode compared to the same pixel layout on a lower resistivity wafer. Electro-optical sensitivity to proton damage is presented, in particular for dark signal and random telegraph signals. The primary conclusion is that the sensitivity to proton damage is dependent on the volume of depletion in the photodiode, which introduces a trade-off between proton hardness and deeper depletion for a wide spectral response.
• article_number: 6937445
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6937445
• html_url: https://ieeexplore.ieee.org/document/6937445/
• abstract_url: https://ieeexplore.ieee.org/document/6937445/
• publication_title: 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
• conference_location: Oxford, UK
• conference_dates: 23-27 Sept. 2013
• publication_number: 6923027
• is_number: 6937344
• publication_year: 2013
• publication_date: 23-27 Sept. 2013
• start_page: 1
• end_page: 7
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 299
• insert_date: 20141030
• index_terms:
  • ieee_terms:
    • Conductivity
    • Protons
    • Standards
    • Noise
    • Photodiodes
    • Radiation effects
    • Histograms
  • author_terms:
    • Active pixel sensors (APS)
    • back-illuminated
    • CMOS image sensors (CIS)
    • dark signal
    • enhanced depletion
    • noise
    • protons
    • radiation effects
    • random telegraph signal (RTS)
    • resistivity
    • semiconductor epitaxial layers
  • dynamic_index_terms:
    • High Resistance
    • High Impedance
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Dark Signal
    • CCD Camera
    • Charge-coupled Device
    • Operation Mode
    • Conversion Factor
    • Quantum Efficiency
    • Metal Oxide Semiconductor
    • Space Applications
    • Charge Capacity
    • Total Noise
    • Post Irradiation
    • Post Radiation
    • Post Radiotherapy
    • Dark Noise
    • Readout Noise
    • PIN Photodiode
• isbn_formats:
  • format: Electronic ISBN, value: 978-1-4673-5057-0, isbnType: New-2005
• authors:
  • Author Name: Andrew Pike
    Affiliation: e2v Technologies Ltd., Chelmsford, United Kingdom
    Author URL: https://ieeexplore.ieee.org/author/38542757800
    ID: 38542757800
    Order: 1
    Author Affiliations:
    • e2v Technologies Ltd., Chelmsford, United Kingdom
  • Author Name: Jérôme Pratlong
    Affiliation: e2v Technologies Ltd., Chelmsford, United Kingdom
    Author URL: https://ieeexplore.ieee.org/author/37085410250
    ID: 37085410250
    Order: 2
    Author Affiliations:
    • e2v Technologies Ltd., Chelmsford, United Kingdom
  • Author Name: Tom Greig
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, United Kingdom
    Author URL: https://ieeexplore.ieee.org/author/37085409469
    ID: 37085409469
    Order: 3
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, United Kingdom

Image Sensor

• sensor_type: CMOS
• resolution: 3 Mega-pixels (7 µm square)
• dynamic_range: Not specified
• pixel_size: 7 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in space applications and other digital imaging requirements.
• benefits: Higher radiation tolerance and performance improvement over CCDs.

Supporting Organizations

• supported_by: Astrium, CNES, UK Space Agency, Regional Growth Fund

Manuscript Details

• publication_date: 23-27 Sept. 2013

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_0e39f39d-def8-43d8-8219-185a248fc926-comparison_of_proton_damage_effects_in_standard_and_enhanced_depletion_cmos_image_sensors.json