Comparison Of Pinning Voltage Estimation Methods In Pinned Photodiode Cmos Image Sensors

• doi: 10.1109/JEDS.2015.2509606
• title: Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 2168-6734
• rank: 1970
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: The pinning voltage is a key design parameter of pinned photodiode CMOS image sensors which significantly affects the device performances and which is often used by manufacturers to monitor production lines and for the optimization of technological processes. This paper presents a comparative study of pinning voltage estimation methods, which are based on both electrical measurements performed on isolated test structures (or on test structures arrays) and in-pixel measurements. It is shown, with the support of simulations and experimental measurements, that not all the estimation methods provide an absolute value of the pinning voltage. Moreover, this paper demonstrates that the commonly accepted theoretical definition of the pinning voltage does not correspond to the physical parameter which is measured with the existing methods.
• article_number: 7361747
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7361747
• html_url: https://ieeexplore.ieee.org/document/7361747/
• abstract_url: https://ieeexplore.ieee.org/document/7361747/
• publication_title: IEEE Journal of the Electron Devices Society
• conference_location:
• conference_dates:
• publication_number: 6245494
• is_number: 7416258
• publication_year: 2016
• publication_date: March 2016
• start_page: 99
• end_page: 108
• citing_paper_count: 14
• citing_patent_count: 0
• download_count: 4167
• insert_date: 20151221
• index_terms:
  • ieee_terms:
    • Voltage measurement
    • Electrostatics
    • CMOS image sensors
    • Photodiodes
    • Charge transfer
    • Photodetectors
  • author_terms:
    • CMOS Image Sensor
    • CIS
    • pinned photodiode
    • PPD
    • Pinning Voltage
    • characterization
    • CMOS image sensor
    • CIS
    • pinned photodiode
    • PPD
    • pinning voltage
    • characterization
  • dynamic_index_terms:
    • PIN Photodiode
    • Rectangular
    • Rectangle
    • Square Root
    • Electrostatic Potential
    • Electric Potential
    • Logarithmic Scale
    • Log-scale
    • Direct Injection
    • Carrier Concentration
    • Charge Carrier Density
    • Minority Carrier
    • Timing Diagram
    • Thermionic Emission
    • Richardson Constant
    • Doping Profile
    • TCAD Simulation
    • Injection Phase
• authors:
  • Author Name: Alice Pelamatti
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37070209300
    ID: 37070209300
    Order: 1
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Vincent Goiffon
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Alexis de Ipanema Moreira
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085624486
    ID: 37085624486
    Order: 3
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 4
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Cédric Virmontois
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38327725000
    ID: 38327725000
    Order: 5
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Olivier Saint-Pé
    Affiliation: Airbus Defence and Space, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38274783700
    ID: 38274783700
    Order: 6
    Author Affiliations:
    • Airbus Defence and Space, Toulouse, France
  • Author Name: Michel Breart de Boisanger
    Affiliation: Airbus Defence and Space, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085613241
    ID: 37085613241
    Order: 7
    Author Affiliations:
    • Airbus Defence and Space, Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: 2.5µm square pixels, 64x128 pixel array
• dynamic_range: Not explicitly stated in the text but is a key parameter
• pixel_size: 2.5µm
• dark_current: Significantly reduced due to isolation of the PPD depletion region from generation centers at the Si/SiO2 interface.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• signal_to_noise_ratio: Outstanding compared to standard 3-transistor active pixel sensors
• sensitivity: Enhanced due to designs including microlenses and on-chip filters
• power_consumption: Low power; specific values are not mentioned.
• noise: Temporal noise and fixed-pattern noise are considered.

Applications & Benefits

• cell_imaging: Used in scientific and commercial applications
• benefits: Low cost, outstanding noise performance, and ability to provide high dark current.

Supporting Organizations

• supported_by: Airbus Defence and Space, CNES

Manuscript Details

• publication_date: March 2016

Relevancy Score

• score: 8
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

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