Compact Modeling Of Charge Transfer In Pinned Photodiodes For Cmos Image Sensors

• doi: 10.1109/TED.2018.2875946
• title: Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1964
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The proposed model relies on the thermionic emission current mechanism, the barrier modulation, and the full-depletion approximation to obtain the charge transfer current. The proposed physics-based model is fully validated with technology computer-aided design simulations, i.e., stationary and optoelectrical simulations. The development of such a compact model for PPD represents an essential step toward the design, simulation, and optimization of PPD-based pixels in CMOS image sensors.
• article_number: 8515043
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8515043
• html_url: https://ieeexplore.ieee.org/document/8515043/
• abstract_url: https://ieeexplore.ieee.org/document/8515043/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 8585319
• publication_year: 2019
• publication_date: Jan. 2019
• start_page: 160
• end_page: 168
• citing_paper_count: 25
• citing_patent_count: 0
• download_count: 2402
• insert_date: 20181030
• index_terms:
  • ieee_terms:
    • Electric potential
    • Electrostatics
    • Charge transfer
    • Capacitance
    • Computational modeling
    • Photodiodes
    • Semiconductor device modeling
  • author_terms:
    • Charge transfer
    • CMOS image sensors (CISs)
    • compact modeling
    • pinned photodiode (PPD)
  • dynamic_index_terms:
    • Compact Model
    • PIN Photodiode
    • Physics-based Models
    • Physically-based Models
    • Thermionic Emission
    • Richardson Constant
    • Time-of-flight
    • Time Of Flight
    • Charge Density
    • Charge Distribution
    • Voltage-gated
    • Gate Voltage
    • Electrostatic Potential
    • Electric Potential
    • Surface Potential
    • Equivalent Circuit
    • Advanced Applications
    • Light Pulses
    • Doping Concentration
    • Positive Voltage
    • Maximum Potential
    • Transfer Time
    • Voltage Variation
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Potential Profile
    • Poisson Equation
    • Transient Simulation
    • Color Filter
    • Colour Filter
    • Mathematical Manipulations
• authors:
  • Author Name: Raffaele Capoccia
    Affiliation: Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37085498112
    ID: 37085498112
    Order: 1
    Author Affiliations:
    • Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
  • Author Name: Assim Boukhayma
    Affiliation: Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37085418249
    ID: 37085418249
    Order: 2
    Author Affiliations:
    • Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
  • Author Name: Farzan Jazaeri
    Affiliation: Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/38667548400
    ID: 38667548400
    Order: 3
    Author Affiliations:
    • Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
  • Author Name: Christian Enz
    Affiliation: Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37269686200
    ID: 37269686200
    Order: 4
    Author Affiliations:
    • Integrated Circuits Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: Not specifically mentioned in the text
• dynamic_range: Not specifically mentioned in the text
• pixel_size: Not specifically mentioned in the text
• dark_current: Not specifically mentioned in the text

Optical Data

• focal_length: Not specifically mentioned in the text
• aperture: Not specifically mentioned in the text
• field_of_view: Not specifically mentioned in the text
• distortion: Not specifically mentioned in the text

Performance Metrics

• frame_rate: Not specifically mentioned in the text
• signal_to_noise_ratio: Not specifically mentioned in the text
• sensitivity: Not specifically mentioned in the text
• shutter_speed: Not specifically mentioned in the text
• power_consumption: Not specifically mentioned in the text
• noise: Not specifically mentioned in the text

Applications & Benefits

• cell_imaging: Applied in smartphones, medical devices, and automotive systems.
• benefits: Converts light into electrical signals enabling digital imaging.

Supporting Organizations

• supported_by: Not specifically mentioned in the text

Manuscript Details

• publication_date: Jan. 2019

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_32a7e99e-1bad-494d-9737-8ab463246511-compact_modeling_of_charge_transfer_in_pinned_photodiodes_for_cmos_image_sensors.json