Cmossoimems Transistor Teramos For Terahertz Imaging

• doi: 10.1109/COMCAS.2009.5386033
• title: CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging
• publisher: IEEE
• isbn: 978-1-4244-3985-0
• issn:
• partnum: 09EX2796
• rank: 1878
• access_type: LOCKED
• content_type: Conferences
• abstract: This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI "virgin" (unreleased) transistors fabricated in the IBM 0.18¿m RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC2·I and measured values of it are presented.
• article_number: 5386033
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5386033
• html_url: https://ieeexplore.ieee.org/document/5386033/
• abstract_url: https://ieeexplore.ieee.org/document/5386033/
• publication_title: 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems
• conference_location: Tel Aviv, Israel
• conference_dates: 9-11 Nov. 2009
• publication_number: 5356753
• is_number: 5385934
• publication_year: 2009
• publication_date: 9-11 Nov. 2009
• start_page: 1
• end_page: 5
• citing_paper_count: 8
• citing_patent_count: 0
• download_count: 469
• insert_date: 20100119
• index_terms:
  • ieee_terms:
    • Optical imaging
    • Transistors
    • Mechanical sensors
    • Sensor phenomena and characterization
    • Silicon on insulator technology
    • Micromechanical devices
    • Temperature measurement
    • Temperature sensors
    • Image sensors
    • Optoelectronic and photonic sensors
  • author_terms:
    • CMOS
    • MOS transistors
    • Silicon-on-Insulator (SOI)
    • Temperature Coefficient of Current (TCC)
    • Terahertz sensors
  • dynamic_index_terms:
    • Terahertz Imaging
    • Silicon
    • Voltage-gated
    • Gate Voltage
    • Function Of Temperature
    • Figure Of Merit
    • Function Of Voltage
    • Drain Current
    • Silicon-on-insulator
    • Buried Oxide
    • Electromechanical System
    • Function Of Gate Voltage
    • Thermal Conductivity
    • Heat Conduction
    • Noise Sources
    • Absorption Efficiency
    • Concentration Efficiency
    • Threshold Voltage
    • Fill Factor
    • Shot Noise
    • Poisson Noise
    • Measurement Bandwidth
    • Noise Equivalent Power
    • Passive Imaging
    • Temperature Coefficient Of Resistance
• isbn_formats:
  • format: Print ISBN, value: 978-1-4244-3985-0, isbnType: New-2005
• authors:
  • Author Name: D. Corcos
    Affiliation: Department of Electrical Engineering, Technion-Israel Institute of Technology, Israel
    Author URL: https://ieeexplore.ieee.org/author/37698136300
    ID: 37698136300
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Technion-Israel Institute of Technology, Israel
  • Author Name: D. Goren
    Affiliation: IBM Haifa Research and Development Laboratories, Israel
    Author URL: https://ieeexplore.ieee.org/author/37300760700
    ID: 37300760700
    Order: 2
    Author Affiliations:
    • IBM Haifa Research and Development Laboratories, Israel
  • Author Name: Y. Nemirovsky
    Affiliation: Department of Electrical Engineering, Technion-Israel Institute of Technology, Israel
    Author URL: https://ieeexplore.ieee.org/author/37283695600
    ID: 37283695600
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, Technion-Israel Institute of Technology, Israel

Image Sensor

• sensor_type: CMOS-SOI-MEMS Transistor (TeraMOS)
• resolution: Not explicitly stated
• dynamic_range: Not explicitly stated
• pixel_size: 200µm to 600µm
• dark_current: Not explicitly stated

Optical Data

• focal_length: Not applicable
• aperture: Not applicable
• field_of_view: Not applicable
• distortion: Not applicable

Performance Metrics

• frame_rate: Not explicitly stated, but mentions video format corresponding to 20-70 ms
• signal_to_noise_ratio: Not explicitly stated
• sensitivity: Not explicitly stated
• shutter_speed: Not explicitly stated
• power_consumption: Not explicitly stated
• noise: Noise Equivalent Power (NEP) estimated around 6pW at room temperature

Applications & Benefits

• cell_imaging: THz imaging can distinguish between normal skin tissue and tumors.
• benefits: Expected to achieve a breakthrough in performance and cost of THz passive imaging systems, allowing large deployment in various applications including surveillance and medical diagnostics.

Supporting Organizations

• supported_by: IBM, Technion - Israel Institute of Technology

Manuscript Details

• publication_date: 9-11 Nov. 2009

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • pixel_size
  • noise

Processed JSON Filename

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