Cmoscompatible Gateallaround Silicon Nanowire Detector

• doi: 10.1109/ICSENS.2011.6127392
• title: CMOS-compatible gate-all-around silicon nanowire detector
• publisher: IEEE
• isbn: 978-1-4244-9288-6
• issn: 1930-0395
• partnum: 11CH38800
• rank: 1882
• access_type: LOCKED
• content_type: Conferences
• abstract: In this paper, we demonstrate gate-all-around (GAA) single crystalline nanowires (SiNWs) that are fabricated using top-down standard CMOS front-end processes. The GAA silicon nanowires are fabricated in well-defined locations with high-quality electrical contacts, and controlled geometry and alignment. These SiNW FETs fabricated in this process have demonstrated repeatable electrical performance with threshold voltages of ~0.2V and subthreshold slopes of ~80mV/dec. The p-i-n silicon nanowires are highly sensitive to the intensity and polarization of the incident light. The results in this work demonstrate that individual SiNWs are good candidates for high resolution optical sensing and allow for tuning of the optical properties of the nanoscale devices by precise control of the nanowire geometry and orientation of the incident light. These top-down fabricated SiNWs can be easily integrated in high density arrays for enhanced light absorption, resulting in imaging sensors with nanoscale spatial resolution.
• article_number: 6127392
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6127392
• html_url: https://ieeexplore.ieee.org/document/6127392/
• abstract_url: https://ieeexplore.ieee.org/document/6127392/
• publication_title: SENSORS, 2011 IEEE
• conference_location: Limerick, Ireland
• conference_dates: 28-31 Oct. 2011
• publication_number: 6114955
• is_number: 6126898
• publication_year: 2011
• publication_date: 28-31 Oct. 2011
• start_page: 1608
• end_page: 1611
• citing_paper_count: 1
• citing_patent_count: 1
• download_count: 156
• insert_date: 20120112
• index_terms:
  • ieee_terms:
    • Silicon
    • Nanobioscience
    • Logic gates
    • Optical sensors
    • Optical polarization
    • Photoconductivity
    • Optical imaging
  • dynamic_index_terms:
    • Silicon Nanowires
    • Si Nanowires
    • Optical Properties
    • Results Of This Work
    • Work Outcomes
    • Polarized Light
    • Image Sensor
    • Camera Sensor
    • Top-down Processes
    • Electrical Contact
    • Properties Of Devices
    • Single Nanowire
    • Enhanced Light Absorption
    • Control Of Geometry
    • Voltage-gated
    • Gate Voltage
    • Optical System
    • Optical Devices
    • Optical Sensors
    • Focused Ion Beam
    • Polar Angle
    • Brewster Angle
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Reactive Ion Etching
    • Dark Current
    • P-n Junction
    • Etching Step
    • Silicon-on-insulator
    • Buried Oxide
    • Nanowire Length
    • Semiconductor Nanowires
    • Resonance Enhancement
• isbn_formats:
  • format: CD, value: 978-1-4244-9288-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-9290-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-9289-3, isbnType: New-2005
• authors:
  • Author Name: Maryam Ziaei-Moayyed
    Affiliation: Advanced Microsystems Department, Sandia National Laboratories, Albuquerque, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/38311846600
    ID: 38311846600
    Order: 1
    Author Affiliations:
    • Advanced Microsystems Department, Sandia National Laboratories, Albuquerque, NM, USA
  • Author Name: Murat Okandan
    Affiliation: Advanced Microsystems Department, Sandia National Laboratories, Albuquerque, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/37281554500
    ID: 37281554500
    Order: 2
    Author Affiliations:
    • Advanced Microsystems Department, Sandia National Laboratories, Albuquerque, NM, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 50-100 nm
• dark_current: <1 pA to 2 nA with laser intensity 2.3 µW (dark current vs. light current)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Highly sensitive optical sensors for medical imaging applications.
• benefits: Enhanced light absorption and nanoscale spatial resolution.

Supporting Organizations

• supported_by: Laboratory Directed Research and Development (LDRD) program at Sandia National Laboratories.

Manuscript Details

• publication_date: 28-31 Oct. 2011

Relevancy Score

• score: 7
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_22a6ec02-c153-4b6c-b214-2efdcc91dcb0-cmoscompatible_gateallaround_silicon_nanowire_detector.json