Cmos Spads Design Issues And Research Challenges For Detectors Circuits And Arrays

• doi: 10.1109/JSTQE.2014.2344034
• title: CMOS SPADs: Design Issues and Research Challenges for Detectors, Circuits, and Arrays
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 1791
• access_type: LOCKED
• content_type: Journals
• abstract: Solid-state single photon detectors are playing a significant role in the development of high-performance single-photon imaging systems for fluorescence lifetime imaging, time-of-flight positron emission tomography and Raman Spectroscopy applications. The main driving factors are the unparalleled levels of miniaturization and portability, low fabrication costs, and high overall performance resulting from the integration of single-photon avalanche diodes (SPADs) with mixed-signal circuits in deep-submicron (DSM) complementary metal-oxide-semiconductor (CMOS) technology. At the heart of such imaging systems is the SPAD, capable of single-photon sensitivity and sub-nanosecond time resolution, and its associated circuitry, which in DSM CMOS, is capable of high-speed, low-power mixed-mode signal processing. In this paper, we review and discuss the most recent developments in DSM CMOS SPAD detectors, circuits and arrays and investigate issues of scalability, miniaturization and performance trade-offs involved in designing SPAD imaging systems. Design considerations, research challenges, and future directions for CMOS SPAD image sensors will be highlighted and addressed.
• article_number: 6872559
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6872559
• html_url: https://ieeexplore.ieee.org/document/6872559/
• abstract_url: https://ieeexplore.ieee.org/document/6872559/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 6712939
• publication_year: 2014
• publication_date: Nov.-Dec. 2014
• start_page: 409
• end_page: 426
• citing_paper_count: 97
• citing_patent_count: 0
• download_count: 3816
• insert_date: 20140806
• index_terms:
  • ieee_terms:
    • CMOS integrated circuits
    • Photonics
    • Imaging
    • CMOS technology
    • Standards
    • Tunneling
    • Detectors
  • author_terms:
    • Single-photon avalanche diode (SPAD)
    • fluorescence lifetime imaging (FLIM)
    • positron emission tomography (PET)
    • Raman
    • TDC
    • imagers
  • dynamic_index_terms:
    • Single-photon Avalanche Diode
    • Imaging System
    • Raman Spectroscopy
    • Raman Spectra
    • Circuitry
    • Time Resolution
    • Single Photon
    • Image Sensor
    • Camera Sensor
    • Fluorescence Lifetime
    • Photon Detection
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • Active Area
    • Active Region
    • Power Consumption
    • Multiple Regions
    • Large Array
    • Dead Time
    • Count Rate
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Standard Technology
    • Time-to-digital Converter
    • Complementary Metal Oxide Semiconductor Technology
    • Time-correlated Single-photon Counting
    • TCSPC
    • Photo-generated Carriers
    • Reference Clock
    • Order Of Hundreds
    • Low Fill Factor
    • Least Significant Bit
    • Low Bit
    • Carrier Diffusion
    • Large Power Consumption
• authors:
  • Author Name: Darek P. Palubiak
    Affiliation: Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada
    Author URL: https://ieeexplore.ieee.org/author/38559060500
    ID: 38559060500
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada
  • Author Name: M. Jamal Deen
    Affiliation: Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada
    Author URL: https://ieeexplore.ieee.org/author/38557801900
    ID: 38557801900
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada

Image Sensor

• sensor_type: CMOS
• resolution: 128 × 128 pixels
• dynamic_range: (not specified in the provided text)
• pixel_size: (not specified in the provided text)
• dark_current: varied from several 10s cps to several 100s kcps depending on technology and design (e.g., as low as 20 kHz DCR at 4 V excess voltage for large area SPADs) in 0.35 um and 0.18 um CMOS processes (with specific pixels ranging from 5 Hz DCR in 90 nm technology to 150 kHz in 65 nm) and reported DCR density figures of merit for various CMOS technologies (Hz/(μm2/221aV)) vary with excess voltage and temperature (more details needed from paper).

Optical Data

• focal_length: (not specified in the provided text)
• aperture: (not specified in the provided text)
• field_of_view: (not specified in the provided text)
• distortion: (not specified in the provided text).

Performance Metrics

• frame_rate: up to 50 kfps for FLIM imaging with TDC and approximately 1-2 fps for other measurements depending on power and resolution requirements
• signal_to_noise_ratio: highest SNR in high-sensitivity applications based on SPAD detectors
• sensitivity: (not specified in the provided text)
• shutter_speed: (not specified in the provided text)
• power_consumption: (not specified in the provided text, but noted to have low overall system cost and power especially with on-chip integration)
• noise: detailed sources include dark current (DCR), afterpulsing, thermal noise, and crosstalk.

Applications & Benefits

• cell_imaging: Used in fluorescence lifetime imaging (FLIM) and time-of-flight positron emission tomography (PET) imaging for sensitive detection of biological processes which require minimal photodamage.
• benefits: Reduced module size and cost; integrated circuits lead to lower power consumption which is significant for portable applications.

Supporting Organizations

• supported_by: Canada Research Chair program, NSERC of Canada, CFI, FedDev Ontario, NSERC ResEau strategic network, NCE IC-IMPACTS, and CMC Microsystems.

Manuscript Details

• publication_date: Nov.-Dec. 2014

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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