Cmos Photodiodes For Narrow Linewidth Applications

• doi: 10.1109/ICSENS.2011.6126960
• title: CMOS photodiodes for narrow linewidth applications
• publisher: IEEE
• isbn: 978-1-4244-9288-6
• issn: 1930-0395
• partnum: 11CH38800
• rank: 1863
• access_type: LOCKED
• content_type: Conferences
• abstract: In recent years CMOS image sensors have gained a major market share for general imaging applications. However, when standard CMOS image sensors are employed in applications that require the detection of light with a very small spectral width, like 3D-time-of-flight imaging or other applications with laser light illumination, problems arise, that are negligible in standard imaging applications with broadband illumination. For a given wavelength a strong variation of the sensitivity upon small process related variations of the dielectric stack on top of the photodiodes leads to large die to die variations. In this paper a method is presented that decreases these sensitivity variations by introducing multiple optical path lengths of the dielectric stack within each photodiode. Using this method the maximum quantum efficiency variation for process induced thickness variations could be reduced significantly for a broad range of wavelengths without any additional processing steps.
• article_number: 6126960
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6126960
• html_url: https://ieeexplore.ieee.org/document/6126960/
• abstract_url: https://ieeexplore.ieee.org/document/6126960/
• publication_title: SENSORS, 2011 IEEE
• conference_location: Limerick, Ireland
• conference_dates: 28-31 Oct. 2011
• publication_number: 6114955
• is_number: 6126898
• publication_year: 2011
• publication_date: 28-31 Oct. 2011
• start_page: 1600
• end_page: 1603
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 107
• insert_date: 20120112
• index_terms:
  • ieee_terms:
    • Photodiodes
    • Silicon
    • Wavelength measurement
    • Silicon compounds
    • Thickness measurement
    • Imaging
  • dynamic_index_terms:
    • Photodiode
    • Narrow Application
    • Wavelength Range
    • Range Of Wavelengths
    • Quantum Efficiency
    • Imaging Applications
    • Standard Imaging
    • Variable Thickness
    • Image Sensor
    • Camera Sensor
    • Spectral Width
    • Multiple Paths
    • Multiple Length
    • Additional Processing Steps
    • Standard Sensor
    • Layer Thickness
    • Phase Difference
    • Spectral Power
    • Radiation Power
    • Radiative Flux
    • Irradiation Power
    • Photocurrent
    • Electron Hole Pairs
    • Thermal Oxidation
    • Material Boundary
    • Antireflection Coatings
    • Metal Interconnects
• isbn_formats:
  • format: CD, value: 978-1-4244-9288-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-9290-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-9289-3, isbnType: New-2005
• authors:
  • Author Name: Frank Hochschulz
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37601302400
    ID: 37601302400
    Order: 1
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
  • Author Name: Stefan Dreiner
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37643480500
    ID: 37643480500
    Order: 2
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
  • Author Name: Holger Vogt
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37345663600
    ID: 37345663600
    Order: 3
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
  • Author Name: Uwe Paschen
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37596176800
    ID: 37596176800
    Order: 4
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and Systems IMS, Duisburg, Germany

Image Sensor

• sensor_type: CMOS
• resolution: (300 µm)²
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Includes applications such as spectroscopy and 3D time-of-flight imaging using laser light illumination.
• benefits: Improved quantum efficiency for narrow linewidth light sources.

Supporting Organizations

• supported_by: Fraunhofer Institute for Microelectronic Circuits and Systems IMS

Manuscript Details

• publication_date: 28-31 Oct. 2011

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_8e50e654-66b0-4aff-a31d-71dc7316f910-cmos_photodiodes_for_narrow_linewidth_applications.json