Cmos Photodiode Model And Hdl Implementation

• doi: 10.1109/ECCTD.2013.6662192
• title: CMOS photodiode model and HDL implementation
• publisher: IEEE
• isbn: 978-3-00-043785-4
• issn:
• rank: 1862
• access_type: LOCKED
• content_type: Conferences
• abstract: With CMOS image sensors scaling down due to the resolution and miniaturization demands, compact models for these devices become essential. A physically based model can be used to optimize the device performance and allow circuit designers to use these sensors in integrated circuits. Among other capacities, this analytical model can be used to predict with high accuracy the best photodiode geometry to achieve the maximum photoresponse while optimizing the total layout area cost.
• article_number: 6662192
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6662192
• html_url: https://ieeexplore.ieee.org/document/6662192/
• abstract_url: https://ieeexplore.ieee.org/document/6662192/
• publication_title: 2013 European Conference on Circuit Theory and Design (ECCTD)
• conference_location: Dresden, Germany
• conference_dates: 8-12 Sept. 2013
• publication_number: 6653328
• is_number: 6662190
• publication_year: 2013
• publication_date: 8-12 Sept. 2013
• start_page: 1
• end_page: 4
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 265
• insert_date: 20131114
• index_terms:
  • ieee_terms:
    • Analytical models
    • Integrated circuit modeling
    • Semiconductor device modeling
    • Photoconductivity
    • CMOS integrated circuits
    • Photodiodes
    • Standards
  • dynamic_index_terms:
    • Hardware Description Language
    • Simulation Results
    • Light Source
    • Active Area
    • Slope Of Curve
    • Late Effects
    • Late Events
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Optical Power
    • Lens Power
    • Refractive Power
    • Cadence
    • Total Current
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Incident Power
    • Standard Technology
    • Circuit Simulation
    • Minority Carrier
    • Device Simulation
    • Technology Node
• isbn_formats:
  • format: Electronic ISBN, value: 978-3-00-043785-4, isbnType: New-2005
• authors:
  • Author Name: B. Blanco-Filgueira
    Affiliation: CITIUS University of Santiago de Compostela, Spain
    Author URL: https://ieeexplore.ieee.org/author/38276622300
    ID: 38276622300
    Order: 1
    Author Affiliations:
    • CITIUS University of Santiago de Compostela, Spain
  • Author Name: P. López
    Affiliation: CITIUS University of Santiago de Compostela, Spain
    Author URL: https://ieeexplore.ieee.org/author/37300632800
    ID: 37300632800
    Order: 2
    Author Affiliations:
    • CITIUS University of Santiago de Compostela, Spain
  • Author Name: M. Suárez
    Affiliation: Universidade de Santiago de Compostela, Santiago de Compostela, Galicia, ES
    Author URL: https://ieeexplore.ieee.org/author/38322008600
    ID: 38322008600
    Order: 3
    Author Affiliations:
    • Universidade de Santiago de Compostela, Santiago de Compostela, Galicia, ES
  • Author Name: J. B. Roldán
    Affiliation: Dep. of Electronics and Computer Technology, University of Granada, Spain
    Author URL: https://ieeexplore.ieee.org/author/37268186700
    ID: 37268186700
    Order: 4
    Author Affiliations:
    • Dep. of Electronics and Computer Technology, University of Granada, Spain

Image Sensor

• sensor_type: CMOS
• resolution: Not specified in the text.
• dynamic_range: Not specified in the text.
• pixel_size: Down to 0.56 µm as indicated by the smallest PD in the technology.
• dark_current: Not specified in the text, but dark current is generally a low value for these types of sensors.

Optical Data

• focal_length: Not specified in the text.
• aperture: Not specified in the text.
• field_of_view: Not specified in the text.
• distortion: Not specified in the text.

Performance Metrics

• frame_rate: Not specified in the text, but CMOS image sensors can generally support high frame rates.
• signal_to_noise_ratio: Not specified in the text.
• sensitivity: High sensitivity is indicated for small PDs with optimal geometry.
• shutter_speed: Not specified in the text.
• power_consumption: Requires minimization as stated in the context of the technology scaling.
• noise: Temporal noise and fixed-pattern noise are mentioned but quantifiable values are not provided.

Applications & Benefits

• cell_imaging: CMOS image sensors are widely used in medical devices for imaging applications.
• benefits: Benefits include lower power consumption and integration capabilities for small form factor and diverse applications.

Supporting Organizations

• supported_by: Spanish Ministry of Science and Education, Xunta de Galicia, Junta de Andalucía, Spanish Ministry of Economy and Competitiveness, AE CITIUS.

Manuscript Details

• publication_date: 8-12 Sept. 2013

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • shutter_speed
  • dark_current
  • noise

Processed JSON Filename

request_522aae70-00f0-4f16-aefd-6e4b3d734d0c-cmos_photodiode_model_and_hdl_implementation.json