Cmos Image Sensorsrecent Advances And Device Scaling Considerations

• doi: 10.1109/IEDM.1997.650332
• title: CMOS image sensors-recent advances and device scaling considerations
• publisher: IEEE
• isbn: 0-7803-4100-7
• issn: 0163-1918
• partnum: 97CH36103
• rank: 1847
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper reviews the industry trend and the recent advances in CMOS image sensor technology, covering advances in technology, devices, pixel architecture, as well as on-chip circuit integration. Compatibility with "standard" CMOS technology is an important consideration for CMOS image sensors. We therefore explore the question: "will the image sensing performance of CMOS imagers get better or get worse as CMOS technologies are scaled?" We project that "standard" CMOS technologies cannot be used for imaging in the deep sub-micron regime without some process modifications.
• article_number: 650332
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=650332
• html_url: https://ieeexplore.ieee.org/document/650332/
• abstract_url: https://ieeexplore.ieee.org/document/650332/
• publication_title: International Electron Devices Meeting. IEDM Technical Digest
• conference_location: Washington, DC, USA
• conference_dates: 10-10 Dec. 1997
• publication_number: 5237
• is_number: 14153
• publication_year: 1997
• publication_date: 10-10 Dec. 1997
• start_page: 201
• end_page: 204
• citing_paper_count: 22
• citing_patent_count: 15
• download_count: 644
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • CMOS technology
    • Pixel
    • CMOS process
    • Image sensors
    • Costs
    • Charge coupled devices
    • Low voltage
    • Energy consumption
    • CMOS logic circuits
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Device Scaling
    • Technological Advances
    • CMOS Technology
    • Dynamic Range
    • Pixel Size
    • Feature Size
    • Size Characteristics
    • Thermal Noise
    • Current Noise
    • Low Power Consumption
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Impact Scale
    • Capacitive Coupling
    • Electrostatic Coupling
    • AC-coupled
    • Dark Current
    • Compression Algorithm
    • Digital Domain
    • Dynamic Compression
    • Dynamic Range Compression
    • Low-voltage Operation
    • Conversion Gain
    • Minimum Feature Size
    • Temporal Noise
    • PIN Photodiode
• isbn_formats:
  • format: Print ISBN, value: 0-7803-4100-7, isbnType: Historical
• authors:
  • Author Name: Hon-Sum Philip Wong
    Affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37087844695
    ID: 37087844695
    Order: 1
    Author Affiliations:
    • IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

Image Sensor

• sensor_type: CMOS
• resolution: 1318x1030
• dynamic_range: 66-75 dB
• pixel_size: 5.6 µm
• dark_current: 0.5 - 10 fA/pixel

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: Low power consumption due to low voltage operation and only one row of pixels active during readout
• noise: 10 - 40 electrons

Applications & Benefits

• cell_imaging: Potential for use in smartphones, medical devices, and automotive systems
• benefits: Low cost, low power consumption, on-chip integration of electronics, random access of image data

Supporting Organizations

• supported_by: IBM, Kodak, DALSA, Photobit, Harvard, Polaroid, Lehigh University

Manuscript Details

• publication_date: 10-10 Dec. 1997

Relevancy Score

• score: 10

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