Cmos Image Sensors
- doi: 10.1109/MCD.2005.1438751
- title: CMOS image sensors
- publisher: IEEE
- isbn:
- issn: 1558-1888
- rank: 1842
- access_type: LOCKED
- content_type: Magazines
-
abstract: In this article, we provide a basic
introduction to CMOS image-sensor technology, design and performance
limits and present recent developments and future directions in this
area. We also discuss image-sensor operation and describe the most
popular CMOS image-sensor architectures. We note the main non-idealities
that limit CMOS image sensor performance, and specify several key
performance measures. One of the most important advantages of CMOS image
sensors over CCDs is the ability to integrate sensing with analog and
digital processing down to the pixel level. Finally, we focus on recent
developments and future research directions that are enabled by
pixel-level processing, the applications of which promise to further
improve CMOS image sensor performance and broaden their applicability
beyond current markets.
- article_number: 1438751
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1438751
-
html_url:
https://ieeexplore.ieee.org/document/1438751/
-
abstract_url:
https://ieeexplore.ieee.org/document/1438751/
-
publication_title: IEEE Circuits and Devices Magazine
- conference_location:
- conference_dates:
- publication_number: 101
- is_number: 30986
- publication_year: 2005
- publication_date: May-June 2005
- start_page: 6
- end_page: 20
- citing_paper_count: 594
- citing_patent_count: 48
- download_count: 21228
- insert_date: 20050613
-
index_terms:
-
ieee_terms:
- CMOS image sensors
- Sensor arrays
- Image sensors
- Pixel
- Optical arrays
- CMOS technology
- Circuits
- Optical imaging
- Image converters
- Color
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Complementary Metal–oxide–semiconductor Image
- Complementary Metal Oxide Semiconductor Image
- Imaging System
- CCD Camera
- Charge-coupled Device
- Video Camera
- Biological Tests
- Advanced Design
- Pixel Level
- Machine Vision
- Visual Navigation
- Digital Imaging System
- Direct Area
- Growth In Recent Years
- Complementary Metal Oxide Semiconductor Technology
- Solid-state Sensors
- Pixel Size
- Integration Time
- Photodiode
- Photodetector
- High End
- Dark Current
- High Dynamic Range
- Retinal Prosthesis
- Visual Prostheses
- Artificial Retina
- Optical Flow
- Flicker Noise
- Digital Circuits
- Digital Circuitry
- System-on-chip
- Temporal Noise
- Pixel Array
- Local Computing
- Local Calculation
-
authors:
Image Sensor
- sensor_type: CMOS
- resolution: 742 × 554
- dynamic_range: greater than 100 dB
- pixel_size: 7 × 7 µm
-
dark_current: orders of magnitude higher than CCD in
submicron processes
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
- frame_rate: 10,000 fps
- signal_to_noise_ratio: ranging from 40–60 dB
- sensitivity: in ISO units
- power_consumption: in milliwatts (not specified)
Applications & Benefits
-
cell_imaging: Capabilities in biological testing,
low-cost, portable applications such as DNA sequencing and pathogen
detection
-
benefits: Integration of sensing with processing to
enable new applications such as mobile imaging and security.
Supporting Organizations
- supported_by: Agilent, Canon, HP, Kodak, DARPA
Manuscript Details
- publication_date: May-June 2005
Relevancy Score
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