Cmos Image Sensors Electronic Cameraonachip

• doi: 10.1109/16.628824
• title: CMOS image sensors: electronic camera-on-a-chip
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1851
• access_type: LOCKED
• content_type: Journals
• abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
• article_number: 628824
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=628824
• html_url: https://ieeexplore.ieee.org/document/628824/
• abstract_url: https://ieeexplore.ieee.org/document/628824/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 13675
• publication_year: 1997
• publication_date: Oct. 1997
• start_page: 1689
• end_page: 1698
• citing_paper_count: 915
• citing_patent_count: 126
• download_count: 7984
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Consumer electronics
    • Charge coupled devices
    • Digital cameras
    • Application software
    • Optical sensors
    • CMOS technology
    • Analog-digital conversion
    • Charge-coupled image sensors
    • Optical signal processing
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Pixel
    • Imaging System
    • Signal Processing
    • Digital Camera
    • Dynamic Range
    • Pixel Size
    • Preparation Of The Manuscript
    • Sample Holder
    • Quantum Efficiency
    • Electron Tomography
    • Electron Images
    • EM Images
    • Fill Factor
    • Dark Current
    • P-n Junction
    • Discrete Cosine Transform
    • Microlenses
    • Micro Lens
    • Pixel Pitch
    • Jet Propulsion Laboratory
    • Conversion Gain
    • Minimum Feature Size
    • Readout Noise
    • PIN Photodiode
    • Temporal Noise
    • Shift Register
    • University Of Edinburgh
    • Silicide
    • Thin Films
    • Alumina
    • Chip Area
    • polySia
    • Polysilicon
    • Polycrystalline Silicon
    • CMOS Technology
• authors:
  • Author Name: E.R. Fossum
    Affiliation: Photobit Corporation, La Crescenta, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326789400
    ID: 37326789400
    Order: 1
    Author Affiliations:
    • Photobit Corporation, La Crescenta, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: varied up to 10 million pixels
• dynamic_range: 72 dB with FPN less than 0.15% saturation
• pixel_size: from 5-22 µm
• dark_current: minimal increase expected from 0.5 µm to 0.25 µm processes

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 30 fps
• signal_to_noise_ratio: up to 72 dB
• sensitivity: about 75-100 electrons r.m.s. for photodiode-type APS
• shutter_speed: varied but includes electronic shutter capabilities
• power_consumption: 10-50 mW for CMOS APS with on-chip ADCs
• noise: typically 150-250 µV r.m.s. for photogate-type APS

Applications & Benefits

• cell_imaging: CMOS image sensors suitable for low-cost visual communications and multimedia applications
• benefits: Low power consumption, increased functionality, and compact design provide advantages over CCD sensors.

Supporting Organizations

• supported_by: NASA, Jet Propulsion Laboratory (JPL), AT&T Bell Labs, Kodak, Photobit

Manuscript Details

• publication_date: Oct. 1997

Relevancy Score

• score: 10

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