Cmos Image Sensor With Nmosonly Global Shutter And Enhanced Responsivity

• doi: 10.1109/TED.2002.807253
• title: CMOS image sensor with NMOS-only global shutter and enhanced responsivity
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1833
• access_type: LOCKED
• content_type: Journals
• abstract: Most CMOS image sensors today use the rolling shutter approach to control the integration time. This pixel architecture is advantageous where minimal pixel size is required to increase resolution or reduce over all chip size. For imaging of a fast moving object or when used with pulsed illumination, the rolling shutter approach is not suitable since it leads to severe distortion. Therefore, these applications require image sensors with a global shutter pixel architecture, which incorporates a sample-and-hold element in each pixel. Due to the optical exposure of the in-pixel storage element, shutter leakage is critical. First approaches which use separate wells in the pixel to isolate the storage node from the photodiode showed good shutter efficiency, but are bulky and led to large pixels with poor fill factor and bad responsivity. This paper presents an NMOS-only pixel with a global shutter and subthreshold operation of the NMOS sample-and-hold transistor to increase optical responsivity by a factor of five to 9 /spl upsi/V/photon, including fill factor.
• article_number: 1185163
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1185163
• html_url: https://ieeexplore.ieee.org/document/1185163/
• abstract_url: https://ieeexplore.ieee.org/document/1185163/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 26588
• publication_year: 2003
• publication_date: Jan. 2003
• start_page: 57
• end_page: 62
• citing_paper_count: 24
• citing_patent_count: 6
• download_count: 1050
• insert_date: 20030310
• index_terms:
  • ieee_terms:
    • Sample and hold circuits
    • Integrated circuit noise
    • Sensitivity
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Global Shutter
    • Integration Time
    • Fill Factor
    • Separate Wells
    • Storage Nodes
    • Pulsed Illumination
    • Rolling Shutter
    • Voltage-gated
    • Gate Voltage
    • Voltage Source
    • Photocurrent
    • Small Signal
    • Threshold Voltage
    • Voltage Difference
    • Voltage Deviation
    • Parasitic Capacitance
    • Charge Injection
    • Slew Rate
    • Conversion Gain
    • Gate Source
    • Temporal Noise
• authors:
  • Author Name: M. Wany
    Affiliation: Photonfocus AG, Lachen, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/38136964600
    ID: 38136964600
    Order: 1
    Author Affiliations:
    • Photonfocus AG, Lachen, Switzerland
  • Author Name: G.P. Israel
    Affiliation: Photonfocus AG, Lachen, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37087687931
    ID: 37087687931
    Order: 2
    Author Affiliations:
    • Photonfocus AG, Lachen, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: 1024x1024
• dynamic_range: not specified
• pixel_size: 10.6 µm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 150 fps
• shutter_speed: 75 µs
• noise: 2.7 mV rms with skimming, 2.1 mV rms without skimming.

Applications & Benefits

• cell_imaging: Not specified
• benefits: Increased conversion gain and responsivity, suitable for high speed and low light applications.

Supporting Organizations

• supported_by: CSEM, Photonfocus, ETHZ.

Manuscript Details

• publication_date: Jan. 2003

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • power_consumption
  • cell_imaging

Processed JSON Filename

request_22858bc5-520d-4ac0-811b-3f9872a132e6-cmos_image_sensor_with_nmosonly_global_shutter_and_enhanced_responsivity.json