Cmos Image Sensor Waferlevel Packaging

• doi: 10.1109/ICEPT.2011.6067039
• title: CMOS image sensor wafer-level packaging
• publisher: IEEE
• isbn: 978-1-4577-1768-0
• issn:
• partnum: 11EX5818
• rank: 1831
• access_type: LOCKED
• content_type: Conferences
• abstract: This article presents the advances in wafer-level processing and integration techniques for CMOS image sensor module manufacturing. CMOS image sensors gave birth to the low-cost, high-volume camera phone market and are being adopted for various high-end applications. The backside illumination technique has significant advantages over the front-side illumination due to separation of the optical path from the metal interconnects. Wafer bonding plays a key role in manufacturing backside illuminated sensors. The cost-effective integration of miniaturized cameras in various handheld devices becomes realized through the introduction of CMOS image sensor modules or camera modules manufactured with wafer-level processing and integration techniques. We developed various technologies enabling wafer-level processing and integration, such as (a) wafer-to-wafer permanent bonding with oxide or polymer layers for manufacturing backside illuminated sensor wafers, (b) wafer-level lens molding and stacking based on UV imprint lithography for making wafer-level optics, (c) conformal coating of various photoresists within high aspect ratio through-silicon vias, and (d) advanced backside lithography for various metallization processes in wafer-level packaging. Those techniques pave the way to the future growth of the digital imaging industry by improving the electrical and optical aspects of devices as well as the module manufacturability.
• article_number: 6067039
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6067039
• html_url: https://ieeexplore.ieee.org/document/6067039/
• abstract_url: https://ieeexplore.ieee.org/document/6067039/
• publication_title: 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging
• conference_location: Shanghai, China
• conference_dates: 8-11 Aug. 2011
• publication_number: 6056740
• is_number: 6066691
• publication_year: 2011
• publication_date: 8-11 Aug. 2011
• start_page: 1
• end_page: 6
• citing_paper_count: 10
• citing_patent_count: 3
• download_count: 1973
• insert_date: 20111103
• index_terms:
  • ieee_terms:
    • Lenses
    • Cameras
    • Bonding
    • Sensors
    • Coatings
    • CMOS integrated circuits
  • author_terms:
    • CIS module
    • BSI
    • wafer-level camera
    • wafer-level optics
    • wafer-level processing and integration
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Wafer-level Packaging
    • Aspect Ratio
    • Processing Techniques
    • Oxide Layer
    • Advanced Processes
    • Promotion Process
    • Optical Path
    • High Aspect Ratio
    • Industrial Growth
    • Growth Of Industry
    • Emergence Of Industry
    • Photoresist
    • Polymer Layer
    • Manufacturing Techniques
    • Integration Of Techniques
    • Smartphone Camera
    • Phone Camera
    • Metal Processing
    • Camera Module
    • Metal Interconnects
    • CCD Camera
    • Charge-coupled Device
    • Silicon Wafer
    • Process Flow
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • Barrier Layer
    • Dielectric Layer
    • Insulation Layer
    • Cellular Phone
    • Activity In Plasma
    • Low-temperature Oxidation
    • Thermal Annealing
    • Glass Wafer
    • Interfacial Bond
    • Sensor Fabrication
    • Sensor Material
    • Textile Sensors
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-1768-0, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-1770-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-1769-7, isbnType: New-2005
• authors:
  • Author Name: Thorsten Matthias
    Affiliation: EV Group, Sankt Florian am Inn, Austria
    Author URL: https://ieeexplore.ieee.org/author/37545979600
    ID: 37545979600
    Order: 1
    Author Affiliations:
    • EV Group, Sankt Florian am Inn, Austria
  • Author Name: Gerald Kreindl
    Affiliation: EV Group, Sankt Florian am Inn, Austria
    Author URL: https://ieeexplore.ieee.org/author/37594551200
    ID: 37594551200
    Order: 2
    Author Affiliations:
    • EV Group, Sankt Florian am Inn, Austria
  • Author Name: Viorel Dragoi
    Affiliation: EV Group, Sankt Florian am Inn, Austria
    Author URL: https://ieeexplore.ieee.org/author/37327968800
    ID: 37327968800
    Order: 3
    Author Affiliations:
    • EV Group, Sankt Florian am Inn, Austria
  • Author Name: Markus Wimplinger
    Affiliation: EV Group, Sankt Florian am Inn, Austria
    Author URL: https://ieeexplore.ieee.org/author/37542679600
    ID: 37542679600
    Order: 4
    Author Affiliations:
    • EV Group, Sankt Florian am Inn, Austria
  • Author Name: Paul Lindner
    Affiliation: EV Group, Sankt Florian am Inn, Austria
    Author URL: https://ieeexplore.ieee.org/author/37340522300
    ID: 37340522300
    Order: 5
    Author Affiliations:
    • EV Group, Sankt Florian am Inn, Austria

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Ubiquitous in cellular phones, car sensors, notebook webcams, digital cameras, video camcorders, security & surveillance systems.
• benefits: Lower cost, high volume manufacturing, improved optical characteristics through BSI technology.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 8-11 Aug. 2011

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_c75d939d-621f-4b76-a447-829c1c02b7bc-cmos_image_sensor_waferlevel_packaging.json