Cmos Image Sensor Process Impact On Dark Current

• doi: 10.1109/IRPS.2014.6860620
• title: CMOS image sensor: Process impact on dark current
• publisher: IEEE
• isbn: 978-1-4799-3317-4
• issn: 1541-7026
• rank: 1841
• access_type: LOCKED
• content_type: Conferences
• abstract: Dark current is a major concern for the CMOS Image sensor. If the Shockley-Read-Hall generation creates this current, the origin of defects is multiple. Metallic contaminants cause deep level bulk defects, this gives the blemish pixels. The interface states generate the mean dark current of the pixel. The good use of Forming Gas anneal is needed to passivate these interfaces. Next, all the plasma processes have to be optimized not to dissociate the passivation, because of the deep UV and the electric field created by plasma. Finally, some process improvements, or the choice of a p-type pixel with holes collection, should give robust image sensors with low and controlled dark current.
• article_number: 6860620
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6860620
• html_url: https://ieeexplore.ieee.org/document/6860620/
• abstract_url: https://ieeexplore.ieee.org/document/6860620/
• publication_title: 2014 IEEE International Reliability Physics Symposium
• conference_location: Waikoloa, HI, USA
• conference_dates: 1-5 June 2014
• publication_number: 6850132
• is_number: 6860565
• publication_year: 2014
• publication_date: 1-5 June 2014
• start_page: 3C.1.1
• end_page: 3C.1.6
• citing_paper_count: 32
• citing_patent_count: 0
• download_count: 2333
• insert_date: 20140721
• index_terms:
  • ieee_terms:
    • Dark current
    • Plasmas
    • Silicon
    • Cavity resonators
    • Dielectrics
    • Mathematical model
    • Annealing
  • author_terms:
    • CMOS Image sensor
    • Dark current
    • Blemish pixel
    • SRH generation
    • Interface states engineering
    • Plasma Induced Damage
    • Deep UV
    • P-type pixel
    • Holes collection pixel
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dark Current
    • Plasma Process
    • Recombination
    • Meiotic
    • Meiosis
    • Silicon
    • Energy Levels
    • Activation Energy
    • Fermi Level
    • Metal Contamination
    • Defect Density
    • Thermal Power Plants
    • Thermal Plants
    • Thermal Generation
    • Interface States
    • Interface Conditions
    • Plasma Etching
    • White Pixels
    • Minority Carrier
    • Deep Ultraviolet
    • Deep UV
    • Wafer Surface
    • Doped Layer
    • Nitride Layer
    • PIN Photodiode
• isbn_formats:
  • format: Electronic ISBN, value: 978-1-4799-3317-4, isbnType: New-2005
• authors:
  • Author Name: J-P Carrère
    Affiliation: FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
    Author URL: https://ieeexplore.ieee.org/author/37328800600
    ID: 37328800600
    Order: 1
    Author Affiliations:
    • FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
  • Author Name: S. Place
    Affiliation: FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
    Author URL: https://ieeexplore.ieee.org/author/37589713800
    ID: 37589713800
    Order: 2
    Author Affiliations:
    • FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
  • Author Name: J-P Oddou
    Affiliation: FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
    Author URL: https://ieeexplore.ieee.org/author/37589760100
    ID: 37589760100
    Order: 3
    Author Affiliations:
    • FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
  • Author Name: D. Benoit
    Affiliation: FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
    Author URL: https://ieeexplore.ieee.org/author/37088246919
    ID: 37088246919
    Order: 4
    Author Affiliations:
    • FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
  • Author Name: F. Roy
    Affiliation: FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France
    Author URL: https://ieeexplore.ieee.org/author/37294013500
    ID: 37294013500
    Order: 5
    Author Affiliations:
    • FTM / Technology R&D, STMicrolelectronics, 850, rue Jean Monnet, 38926 CROLLES Cedex, France

Image Sensor

• sensor_type: CMOS Image Sensor
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 1.4µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Applications include smartphones, medical devices, and automotive systems.
• benefits: Converts light into electrical signals for digital imaging.

Supporting Organizations

• supported_by: STMicroelectronics

Manuscript Details

• publication_date: 1-5 June 2014

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_77cf10ad-e953-40ef-8b9e-781c675abe8f-cmos_image_sensor_process_impact_on_dark_current.json