Cmos Demodulation Image Sensor For Nanosecond Optical Waveform Analysis

• doi: 10.1109/JSEN.2012.2237548
• title: CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 1760
• access_type: LOCKED
• content_type: Journals
• abstract: An image sensor with 256 × 256 pixels and a pitch of 6.3 μm, suitable for resolving ultrashort optical phenomena, is developed. It is based on a standard CMOS process with pinned photodiode option. The pixel comprises three transfer gates to allow versatile sensor operation whereas repetitive exposure and integration are used to increase the lowest signal level that can be detected. The image sensor is fully functional and demonstrates the ability to demodulate signals in the time-domain with contrast higher than 92% up to 100 MHz. Algorithms for fluorescence lifetime imaging microscopy and three-dimensional time-of-flight imaging are proposed. They allow measurements to be insensitive to background light, subsurface leakage, dark current leakage, and subthreshold leakage of the transfer gates. Lifetimes of free quantum dots are resolved using time-domain demodulation. Range imaging is also shown to be possible with frequency-domain demodulation although background light cannot be suppressed efficiently in the present implementation of the image sensor due to the limited full well capacity.
• article_number: 6401145
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6401145
• html_url: https://ieeexplore.ieee.org/document/6401145/
• abstract_url: https://ieeexplore.ieee.org/document/6401145/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6486560
• publication_year: 2013
• publication_date: May 2013
• start_page: 1487
• end_page: 1497
• citing_paper_count: 7
• citing_patent_count: 0
• download_count: 639
• insert_date: 20130103
• index_terms:
  • ieee_terms:
    • Signal to noise ratio
    • Time domain analysis
    • Frequency domain analysis
    • Image sensors
    • Optical imaging
  • author_terms:
    • Buried photodiode
    • CMOS imager
    • FLIM
    • FLS
    • fluorescence decay
    • fluorescence lifetime
    • image sensor
    • phosphorescence lifetime
    • pinned photodiode
    • time-of-flight
    • TOF
    • triplet state
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Optical Waveform
    • Fluorescence Lifetime
    • Dark Current
    • Background Light
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • Lifetime Imaging
    • CMOS Process
    • Optical Phenomena
    • Optical Phenomenon
    • PIN Photodiode
    • Time Domain
    • Frequency Domain
    • 3D Images
    • Integration Time
    • Output Signal
    • Light Detection And Ranging
    • Lidar
    • Differential Signal
    • Square Wave
    • Light Pulses
    • Photomultiplier Tube
    • Single-photon Avalanche Diode
    • Integration Window
    • Frequency-domain Method
    • Time-domain Method
    • Excitation Signal
    • Fluorescence Decay
    • Readout Noise
    • Background Current
    • Heaviside Function
    • Unit Step Function
    • Heaviside Step Function
    • Unit Step
    • Quantum Dots Solution
• authors:
  • Author Name: Lysandre-Edouard Bonjour
    Affiliation: Electronics Laboratory, Swiss Federal Institute of Technology, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/38233584100
    ID: 38233584100
    Order: 1
    Author Affiliations:
    • Electronics Laboratory, Swiss Federal Institute of Technology, Lausanne, Switzerland
    • Swiss Center for Electronics and Microtechnology CSEM, Inc., Zurich, Switzerland
  • Author Name: David Beyeler
    Affiliation: Swiss Center for Electronics and Microtechnology CSEM, Inc., Zurich, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37688144800
    ID: 37688144800
    Order: 2
    Author Affiliations:
    • Swiss Center for Electronics and Microtechnology CSEM, Inc., Zurich, Switzerland
  • Author Name: Nicolas Blanc
    Affiliation: Swiss Center for Electronics and Microtechnology CSEM, Inc., Zurich, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37268603400
    ID: 37268603400
    Order: 3
    Author Affiliations:
    • Swiss Center for Electronics and Microtechnology CSEM, Inc., Zurich, Switzerland
  • Author Name: Maher Kayal
    Affiliation: Electronics Laboratory, Swiss Federal Institute of Technology, Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37276152600
    ID: 37276152600
    Order: 4
    Author Affiliations:
    • Electronics Laboratory, Swiss Federal Institute of Technology, Lausanne, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: 256x256 pixels
• dynamic_range: 47.1 dB
• pixel_size: 6.3 µm
• dark_current: 0.472 fA/pixel

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 200 fps
• signal_to_noise_ratio: 35.6 dB
• sensitivity: 13 nW/cm²
• shutter_speed: 5 ns to 20 ms
• power_consumption: 236 mW for frequency-domain demodulation, 67 mW for time-domain demodulation
• noise: 38.7 electrons

Applications & Benefits

• cell_imaging: Fluorescence Lifetime Imaging Microscopy (FLIM) measuring the lifetime of quantum dots with lifetimes of 6.9 ns and 53.0 ns.
• benefits: Reduced susceptibility to background light and various leakage sources, allowing for high contrast and sensitivity.

Supporting Organizations

• supported_by: Swiss Center for Electronics and Microtechnology (CSEM), Swiss Federal Institute of Technology (EPFL)

Manuscript Details

• publication_date: May 2013

Relevancy Score

• score: 10

Processed JSON Filename

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