Cmos Compatible Through Wafer Interconnects For Medical Imaging Detectors

• doi: 10.1109/NSSMIC.2007.4436867
• title: CMOS compatible through wafer interconnects for medical imaging detectors
• publisher: IEEE
• isbn: 978-1-4244-0923-5
• issn: 1082-3654
• partnum: 07CH37869
• rank: 1809
• access_type: LOCKED
• content_type: Conferences
• abstract: Modern medical imaging systems like computed tomography (CT) require advanced technologies for the imaging sensor and processing electronics as well as for the packaging technologies to build an integrated sensor-system. As the size of the overall detector increased within the last years, new solutions for the realization of these large area detectors are required especially for advanced systems with integrated detector electronics. As the pixel size is about 1.1 times 1.4 mm2 the overall size of the detector, with about 60,000 pixels, is in the range of 76,000 mm2. Several advanced concepts - realized in standard CMOS technology - for active pixel arrays with charge-integration, high dynamic range current amplifier and in-pixel sigma-delta-modulator have been investigated. For the usage in large area detectors new packaging concepts have to be developed as a four-side-buttable (tile) structure can only be realized with a backside connection of the chip. In our development the through wafer interconnects (TWI) do not necessarily show up in the front side as metal signal layers could be used for signal routing on top of the TWI. From CT application the geometric and the electric specifications for the TWI have been derived. The optical sensitive front-side of the chip that is attached to a scintillator crystal is not influenced by the processing of the TWI. The basic idea for the CMOS-compatible TWI technology is the design of interconnecting conductive trench geometries in the wafer prior to the CMOS processing.
• article_number: 4436867
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4436867
• html_url: https://ieeexplore.ieee.org/document/4436867/
• abstract_url: https://ieeexplore.ieee.org/document/4436867/
• publication_title: 2007 IEEE Nuclear Science Symposium Conference Record
• conference_location: Honolulu, HI, USA
• conference_dates: 26 Oct.-3 Nov. 2007
• publication_number: 4436263
• is_number: 4436808
• publication_year: 2007
• publication_date: 26 Oct.-3 Nov. 2007
• start_page: 3430
• end_page: 3435
• citing_paper_count: 0
• citing_patent_count: 3
• download_count: 110
• insert_date: 20080122
• index_terms:
  • ieee_terms:
    • Biomedical imaging
    • Detectors
    • CMOS technology
    • Computed tomography
    • CMOS image sensors
    • Optical imaging
    • Image sensors
    • Sensor systems
    • Electronics packaging
    • Dynamic range
  • dynamic_index_terms:
    • Medical Imaging
    • Clinical Imaging
    • Diagnostic Imaging
    • Conductive
    • Electrical Conductivity
    • Detectable Size
    • Scintillator
    • High Dynamic Range
    • Advanced Concepts
    • CMOS Process
    • Large Detector
    • Standard CMOS
    • Mobile Phone
    • Aspect Ratio
    • Etching
    • System Software
    • Packaging System
    • Photodiode
    • Standard Process
    • Process Flow
    • Post-processing Step
    • Photomask
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Low-pressure Chemical Vapor Deposition
    • LPCVD
    • Thick Wafer
    • Padding Size
    • Chip Detection
• isbn_formats:
  • format: CD, value: 978-1-4244-0923-5, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-0922-8, isbnType: New-2005
• authors:
  • Author Name: G. Vogtmeier
    Affiliation: Philips Research Europe-Aachen, Aachen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275075800
    ID: 37275075800
    Order: 1
    Author Affiliations:
    • Philips Research Europe-Aachen, Aachen, Germany
  • Author Name: C. Drabe
    Affiliation: Fraunhofer Institute for Photonic MicroSystems, Dresden, Germany
    Author URL: https://ieeexplore.ieee.org/author/37833097800
    ID: 37833097800
    Order: 2
    Author Affiliations:
    • Fraunhofer Institute for Photonic MicroSystems, Dresden, Germany
  • Author Name: R. Dorscheid
    Affiliation: Philips Research Europe-Aachen, Aachen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37070724500
    ID: 37070724500
    Order: 3
    Author Affiliations:
    • Philips Research Europe-Aachen, Aachen, Germany
  • Author Name: R. Steadman
    Affiliation: Philips Research Europe-Aachen, Aachen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275072000
    ID: 37275072000
    Order: 4
    Author Affiliations:
    • Philips Research Europe-Aachen, Aachen, Germany
  • Author Name: W. Jeroch
    Affiliation: Fraunhofer Institute for Photonic MicroSystems, Dresden, Germany
    Author URL: https://ieeexplore.ieee.org/author/37833095700
    ID: 37833095700
    Order: 5
    Author Affiliations:
    • Fraunhofer Institute for Photonic MicroSystems, Dresden, Germany

Image Sensor

• sensor_type: CMOS
• resolution: 60,000 pixels (pixel size: 1.1 x 1.4 mm²)
• dynamic_range: high dynamic range current amplifier
• pixel_size: 1.1 x 1.4 mm²
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Medical imaging applications like CT detectors
• benefits: Enhanced integration of readout and preprocessing electronics; high stability for large area detectors; minimized crosstalk effects.

Supporting Organizations

• supported_by: Philips Research Europe, Fraunhofer Institute Photonic Microsystems

Manuscript Details

• publication_date: 26 Oct.-3 Nov. 2007

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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