Cmos Active Pixel Image Sensors For Highly Integrated Imaging Systems

• doi: 10.1109/4.551910
• title: CMOS active pixel image sensors for highly integrated imaging systems
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 1805
• access_type: LOCKED
• content_type: Journals
• abstract: A family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported. The image sensors were fabricated using commercially available 2-/spl mu/m CMOS processes and both p-well and n-well implementations were explored. The arrays feature random access, 5-V operation and transistor-transistor logic (TTL) compatible control signals. Methods of on-chip suppression of fixed pattern noise to less than 0.1% saturation are demonstrated. The baseline design achieved a pixel size of 40 /spl mu/m/spl times/40 /spl mu/m with 26% fill-factor. Array sizes of 28/spl times/28 elements and 128/spl times/128 elements have been fabricated and characterized. Typical output conversion gain is 3.7 /spl mu/V/e/sup -/ for the p-well devices and 6.5 /spl mu/V/e/sup -/ for the n-well devices. Input referred read noise of 28 e/sup -/ rms corresponding to a dynamic range of 76 dB was achieved. Characterization of various photogate pixel designs and a photodiode design is reported. Photoresponse variations for different pixel designs are discussed.
• article_number: 551910
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=551910
• html_url: https://ieeexplore.ieee.org/document/551910/
• abstract_url: https://ieeexplore.ieee.org/document/551910/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 11970
• publication_year: 1997
• publication_date: Feb. 1997
• start_page: 187
• end_page: 197
• citing_paper_count: 304
• citing_patent_count: 109
• download_count: 3362
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Pixel
    • Image sensors
    • Logic arrays
    • Array signal processing
    • CMOS process
    • CMOS logic circuits
    • Circuit noise
    • Dynamic range
    • Photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Active Sensors
    • Signal-to-noise
    • Signal-to-noise Ratio
    • CCD Camera
    • Charge-coupled Device
    • Dynamic Range
    • Pixel Size
    • Photodiode
    • Noise Suppression
    • Noise-canceling
    • Active Noise Control
    • High Dynamic Range
    • Machine Vision
    • Visual Navigation
    • Noise Analysis
    • CMOS Process
    • Baseline Design
    • Conversion Gain
    • Sensor Pixel
    • Transistor-transistor Logic
    • TCTL
    • Small Pixel Size
    • Frame Rate
    • Saturation Level
    • Noise Power
    • Total Noise
    • Measured Noise Levels
    • Higher Saturation Levels
    • Jet Propulsion Laboratory
    • Readout Circuit
    • Transistor Size
    • Transistor Count
    • Dark Current
    • Bottom Of Column
    • Hz Frame Rate
    • Shot Noise
    • Poisson Noise
• authors:
  • Author Name: S.K. Mendis
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37275796700
    ID: 37275796700
    Order: 1
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    • Hewlett Packard Company, Palo Alto, CA, USA
  • Author Name: S.E. Kemeny
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37348450800
    ID: 37348450800
    Order: 2
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
  • Author Name: R.C. Gee
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37356400400
    ID: 37356400400
    Order: 3
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    • Intel, Santa Clara, CA, USA
  • Author Name: B. Pain
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326642900
    ID: 37326642900
    Order: 4
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
  • Author Name: C.O. Staller
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37348135600
    ID: 37348135600
    Order: 5
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
  • Author Name: Quiesup Kim
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087903606
    ID: 37087903606
    Order: 6
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
  • Author Name: E.R. Fossum
    Affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326789400
    ID: 37326789400
    Order: 7
    Author Affiliations:
    • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA

Image Sensor

• sensor_type: CMOS Active Pixel Sensor (APS)
• resolution: 128x128 elements
• dynamic_range: 76 dB
• pixel_size: 40 µm x 40 µm
• dark_current: 0.26 V/s (p-well), 1.76 V/s (n-well)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 Hz (up to 70 Hz in practice)
• signal_to_noise_ratio: 76 dB
• power_consumption: 7 mW (128x128 array), 5.9 mW (28x28 array)
• noise: 28 e- rms (p-well), 32 e- rms (n-well)

Applications & Benefits

• cell_imaging: Suitable for robotics, machine vision, guidance and navigation, automotive applications, video phones, computer inputs, and home surveillance devices.
• benefits: High degree of integration with on-chip processing circuitry, low noise, absence of lag or smear, good blooming control.

Supporting Organizations

• supported_by: Jet Propulsion Laboratory, California Institute of Technology, Advanced Research Projects Agency, National Aeronautics and Space Administration.

Manuscript Details

• publication_date: Feb. 1997

Relevancy Score

• score: 10

Processed JSON Filename

request_261326d6-bbdb-422b-aee7-184cff3c3d70-cmos_active_pixel_image_sensors_for_highly_integrated_imaging_systems.json