Cmos Active Pixel Image Sensors Fabricated Using A 18V 025Spl Mum Cmos Technology

• doi: 10.1109/16.662797
• title: CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl mu/m CMOS technology
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1804
• access_type: LOCKED
• content_type: Journals
• abstract: This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-/spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.
• article_number: 662797
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=662797
• html_url: https://ieeexplore.ieee.org/document/662797/
• abstract_url: https://ieeexplore.ieee.org/document/662797/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 14512
• publication_year: 1998
• publication_date: April 1998
• start_page: 889
• end_page: 894
• citing_paper_count: 46
• citing_patent_count: 25
• download_count: 837
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • CMOS technology
    • Pixel
    • Image sensors
    • Isolation technology
    • CMOS logic circuits
    • CMOS process
    • Logic devices
    • Switches
    • Charge coupled devices
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Active Sensors
    • CMOS Technology
    • Device Design
    • Design Considerations
    • Impact Scale
    • Sensor Results
    • Voltage-gated
    • Gate Voltage
    • Photodiode
    • Threshold Voltage
    • Fill Factor
    • Dark Current
    • Potential Well
    • Energy Diagram
    • Optical Window
    • Gate Oxide
    • Gate Length
    • Silicide
    • Fixed Time Window
• authors:
  • Author Name: H.P. Wong
    Affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37087514818
    ID: 37087514818
    Order: 1
    Author Affiliations:
    • IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
  • Author Name: R.T. Chang
    Affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37346147800
    ID: 37346147800
    Order: 2
    Author Affiliations:
    • IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
  • Author Name: E. Crabbe
    Affiliation: IBM Semiconductor Research and Development Center, Hopewell Junction, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37322737400
    ID: 37322737400
    Order: 3
    Author Affiliations:
    • IBM Semiconductor Research and Development Center, Hopewell Junction, NY, USA
  • Author Name: P.D. Agnello
    Affiliation: IBM Semiconductor Research and Development Center, Hopewell Junction, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37293930500
    ID: 37293930500
    Order: 4
    Author Affiliations:
    • IBM Semiconductor Research and Development Center, Hopewell Junction, NY, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 5.5µm x 5.5µm
• dark_current: ~~3-7 fA (photogate), 1-2 fA (photodiode) per pixel, corresponding to 25 to 38 electrons (rms), 14 to 20 electrons (rms) for 33 ms integration time. Dark current is 2-20 times higher than best quality CCDs, but reasonable for current technology stage and layout.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: ~25 to 38 e- (photogate), 14 to 20 e- (photodiode) for dark noise.

Applications & Benefits

• cell_imaging: Can be used in smartphones, medical devices, and automotive systems due to low voltage and low power consumption.
• benefits: Integration with on-chip electronics allows for lower cost, random access of image data, and potential scene enhancements.

Supporting Organizations

• supported_by: IBM Thomas J. Watson Research Center, IBM Semiconductor Research and Development Center.

Manuscript Details

• publication_date: April 1998

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_7bb85896-d2f3-4c67-98c6-c6e6c68ae5d3-cmos_active_pixel_image_sensors_fabricated_using_a_18v_025spl_mum_cmos_technology.json