Circuit Design Of The Complementary Pixel Structure For A Wide Dynamic
Range Cis
- doi: 10.1109/INEC.2010.5424658
-
title: Circuit design of the complementary pixel
structure for a wide dynamic range CIS
- publisher: IEEE
- isbn: 978-1-4244-3544-9
- issn: 2159-3531
- partnum: 10EX2673
- rank: 1939
- access_type: LOCKED
- content_type: Conferences
-
abstract: In this paper, we propose a new complementary
image sensor pixel structure by improving the conventional 3TR pixel
structure. Proposed complementary pixel structure for wide dynamic range
CIS consists of photo diode, PMOS reset transistor, several PMOS and
NMOS transistors for complementary signals. We show SPICE simulation
results of the complementary image pixel structure for optimization.
Proposed complementary pixel was fabricated with 0.5 ¿m 1-poly 2-metal
standard CMOS process. From the measured results, output voltage of the
proposed pixel is 0.8 V to 3.8 V in condition of the 5 V power supply.
These output signals give enough chances to detect wide operation
coverage.
- article_number: 5424658
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5424658
-
html_url:
https://ieeexplore.ieee.org/document/5424658/
-
abstract_url:
https://ieeexplore.ieee.org/document/5424658/
-
publication_title: 2010 3rd International
Nanoelectronics Conference (INEC)
- conference_location: Hong Kong, China
- conference_dates: 3-8 Jan. 2010
- publication_number: 5416830
- is_number: 5424438
- publication_year: 2010
- publication_date: 3-8 Jan. 2010
- start_page: 240
- end_page: 241
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 273
- insert_date: 20100304
-
index_terms:
-
ieee_terms:
- Circuit synthesis
- Dynamic range
- Computational Intelligence Society
- Pixel
- Image sensors
- Diodes
- MOSFETs
- SPICE
- CMOS process
- Power measurement
-
dynamic_index_terms:
- Circuit Design
- Complementary Structure
- Photodiode
- Output Signal
- Image Sensor
- Camera Sensor
- Conventional Structure
- SPICE Simulations
-
isbn_formats:
-
format: CD,
value: 978-1-4244-3544-9,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4244-3543-2,
isbnType: New-2005
-
authors:
-
Author Name: Jinwoo Jung
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37067954800
ID: 37067954800
Order: 1
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
-
Author Name: Bomin Kwon
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37391337400
ID: 37391337400
Order: 2
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
-
Author Name: Jiman Kim
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37407291900
ID: 37407291900
Order: 3
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
-
Author Name: Juhong Park
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37089072019
ID: 37089072019
Order: 4
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
-
Author Name: Namtae Kim
Affiliation: Department of Electronics and
Intelligent Robotics Engineering, Inje University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37404886800
ID: 37404886800
Order: 5
Author Affiliations:
-
Department of Electronics and Intelligent Robotics Engineering,
Inje University, South Korea
-
Author Name: Yongsu Park
Affiliation: Department of Electronics, Chung Cheng
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37407410700
ID: 37407410700
Order: 6
Author Affiliations:
-
Department of Electronics, Chung Cheng University, South Korea
-
Author Name: Jewon Lee
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37310711800
ID: 37310711800
Order: 7
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
-
Author Name: Hanjung Song
Affiliation: Department of Nano Engineering, Inje
University, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37395831900
ID: 37395831900
Order: 8
Author Affiliations:
-
Department of Nano Engineering, Inje University, South Korea
Image Sensor
- sensor_type: CMOS
- resolution: Not specified
-
dynamic_range: More than conventional 3TR structure
- pixel_size: Not specified
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Used in various fields, both consumer and
industrial, such as smartphones, medical devices, and automotive
systems.
-
benefits: Lower fabrication cost than CCD, integration
with signal processing circuits.
Supporting Organizations
-
supported_by: IC Design Education Center (IDEC), IDEC
CAD tools.
Manuscript Details
- publication_date: 3-8 Jan. 2010
Relevancy Score
- score: 9
-
missing_fields:
- resolution
- pixel_size
- dynamic_range
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
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