Charged Particle Imaging Using Cmos Active Pixel Sensors

• doi: 10.1109/IST.2009.5071593
• title: Charged particle imaging using CMOS Active Pixel Sensors
• publisher: IEEE
• isbn: 978-1-4244-3483-1
• issn: 1558-2809
• partnum: 09EX2655
• rank: 1931
• access_type: LOCKED
• content_type: Conferences
• abstract: CMOS Active Pixel Sensors for charged particle imaging are studied. Using same architecture, two prototypes were developed on AMS 0.35 µm OPTO process with different thickness of epitaxial layer. Both have a 32 × 128 pixels array where 24 columns have discriminated binary outputs and 8 columns have test analog outputs. Thanks to the correlated double sampling structure realized in pixel level, noise is well controlled. The temporal noise is around 11 electrons and the fixed pattern noise is below 3 electrons. Charged particle detection performances are evaluated by using a 55Fe radioactive source and measurements are reported. One bit binary output is realized by an auto-zero discriminator which is implemented at the end of each column. The power dissipation of each column is 430 µW (pixel and discriminator).
• article_number: 5071593
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5071593
• html_url: https://ieeexplore.ieee.org/document/5071593/
• abstract_url: https://ieeexplore.ieee.org/document/5071593/
• publication_title: 2009 IEEE International Workshop on Imaging Systems and Techniques
• conference_location: Shenzhen, China
• conference_dates: 11-12 May 2009
• publication_number: 5039319
• is_number: 5071585
• publication_year: 2009
• publication_date: 11-12 May 2009
• start_page: 11
• end_page: 16
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 147
• insert_date: 20090612
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Pixel
    • Charge-coupled image sensors
    • Electrons
    • Prototypes
    • Epitaxial layers
    • Testing
    • Sampling methods
    • Noise level
    • Performance evaluation
  • author_terms:
    • CMOS active pixel sensor
    • Charged particle detection
    • CDS
    • Low noise
  • dynamic_index_terms:
    • Charged Particles
    • Active Pixel Sensor
    • Layer Thickness
    • Radiation Source
    • Radioactive Source
    • Irradiation Source
    • Pixel Level
    • Epitaxial Layer
    • Epilayer
    • Pixel Array
    • Binary Output
    • Analog Output
    • Double Sampling
    • End Of Column
    • Temporal Noise
    • Signal-to-noise
    • Signal-to-noise Ratio
    • CCD Camera
    • Charge-coupled Device
    • Input Signal
    • Charge Carriers
    • Noise Sources
    • Very Low Frequency
    • Electron Hole Pairs
    • Total Charge
    • Charge Collection
    • Radiation Tolerance
    • Radiation Hardness
    • Charge Collection Efficiency
    • Beam Test
    • Transfer Curves
    • Noise Performance
    • Visible Photons
    • Clock Frequency
    • High-energy Particles
• isbn_formats:
  • format: CD, value: 978-1-4244-3483-1, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-3482-4, isbnType: New-2005
• authors:
  • Author Name: Yan Li
    Affiliation: Texas Instruments DSPs Laboratory College of Computer Science and Software Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37087315443
    ID: 37087315443
    Order: 1
    Author Affiliations:
    • Texas Instruments DSPs Laboratory College of Computer Science and Software Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Zhen Ji
    Affiliation: Texas Instruments DSPs Laboratory College of Computer Science and Software Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37291525900
    ID: 37291525900
    Order: 2
    Author Affiliations:
    • Texas Instruments DSPs Laboratory College of Computer Science and Software Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Yavuz Degerli
    Affiliation: CEA Saclay, IRFU/SEDI Gif-sur-Yvette, France
    Author URL: https://ieeexplore.ieee.org/author/38348452900
    ID: 38348452900
    Order: 3
    Author Affiliations:
    • CEA Saclay, IRFU/SEDI Gif-sur-Yvette, France
  • Author Name: Fabienne Orsini
    Affiliation: CEA Saclay, IRFU/SEDI Gif-sur-Yvette, France
    Author URL: https://ieeexplore.ieee.org/author/37268540800
    ID: 37268540800
    Order: 4
    Author Affiliations:
    • CEA Saclay, IRFU/SEDI Gif-sur-Yvette, France

Image Sensor

• sensor_type: CMOS Active Pixel Sensor
• resolution: 32 x 128 pixels
• dynamic_range: Not explicitly provided
• pixel_size: 25 µm
• dark_current: Not explicitly provided

Optical Data

• focal_length: Not provided
• aperture: Not provided
• field_of_view: Not provided
• distortion: Not provided

Performance Metrics

• frame_rate: 20 µs/frame (equivalent to 50 fps)
• signal_to_noise_ratio: Not explicitly provided, but temporal noise around 11 electrons and fixed pattern noise below 3 electrons indicates a high SNR
• sensitivity: Not provided
• shutter_speed: Not provided
• power_consumption: 430 µW per column
• noise: Temporal noise at around 11 electrons

Applications & Benefits

• cell_imaging: Charged particle imaging for high energy physics experiments.
• benefits: Low power consumption, ability to integrate full signal processing circuit on-chip, excellent noise performance, and faster readout speed compared to traditional CCDs.

Supporting Organizations

• supported_by: Texas Instruments Innovation Foundation, National Natural Science Foundation of China, Key Laboratory Foundation of Shenzhen City, Science Foundation of Shenzhen City.

Manuscript Details

• publication_date: 11-12 May 2009

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • design considerations

Processed JSON Filename

request_ee6674cd-aaf4-413b-b2af-322849b53705-charged_particle_imaging_using_cmos_active_pixel_sensors.json