Chargecoupled Device Ccd Imaging At Low Light Levels

• doi: 10.1109/IEDM.1972.249219
• title: Charge-coupled device (CCD) imaging at low light levels
• publisher: IEEE
• isbn:
• issn:
• rank: 1930
• access_type: LOCKED
• content_type: Conferences
• abstract: We present the analysis, design, fabrication and evaluation of low light level, anti-blooming, charge-coupled device (CCD) image sensors in line and area arrays. The transfer of low light level charge is determined by the non-linear electric field beneath the gate electrode. The CCD image sensor array is analyzed with a figure-of-merit which is the product of signal-to-noise (S/N) and modulation transfer function (MFT). The noise equivalent signal (NES), S/N = 1, is formulated at the system output and referenced to the readout diode. The CCD arrays use a 2-phase, stepped-oxide, clock system with interline transfer. Front surface imaging is achieved with thin silicon-gate electrodes (1000-2000 Å) which also serve as a "field shield" and the bottom layer of the lower phase line. The lowerphase line is constructed with an aluminum-silicon sandwich to provide low charging time constants (< 5 nsec) and reduce the incidence of phase line-to-line substrate shorts over large areas. The upper phase line is aluminum and a 3rd level aluminum forms a light shield over the interline shift-registers and CMOS readout circuit. The latter in combination with an analog signal processor provides a low-noise, composite video output signal. A unique cell design is used to combine active CCD sensor, interline shift-register, transfer gate and "stopper" diffusions into compact 2 mil centers in the area array. 1 × 128 element line arrays and 75 × 100 element area arrays are discussed in terms of individual elements NES, responsivity and spectral response.
• article_number: 1477228
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1477228
• html_url: https://ieeexplore.ieee.org/document/1477228/
• abstract_url: https://ieeexplore.ieee.org/document/1477228/
• publication_title: 1972 International Electron Devices Meeting
• conference_location: Washington, DC, USA
• conference_dates: 4-6 Dec. 1972
• publication_number: 9938
• is_number: 31706
• publication_year: 1972
• publication_date: 4-6 Dec. 1972
• start_page: 190
• end_page: 190
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 254
• insert_date: 20050809
• index_terms:
  • ieee_terms:
    • Charge coupled devices
    • Sensor arrays
    • Image analysis
    • Electrodes
    • Aluminum
    • Signal processing
    • Fabrication
    • Image sensors
    • Optical arrays
    • Charge-coupled image sensors
  • dynamic_index_terms:
    • CCD Camera
    • Charge-coupled Device
    • Design Considerations
    • Image Sensor
    • Camera Sensor
    • Spectral Response
    • Modulation Transfer Function
    • Optical Transfer Function
    • Clock System
    • Line Array
    • Texas Instruments
• authors:
  • Author Name: M.H. White
    Affiliation: Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37329935200
    ID: 37329935200
    Order: 1
    Author Affiliations:
    • Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
  • Author Name: D.R. Lampe
    Affiliation: Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37325381500
    ID: 37325381500
    Order: 2
    Author Affiliations:
    • Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
  • Author Name: F.C. Blaha
    Affiliation: Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37324078000
    ID: 37324078000
    Order: 3
    Author Affiliations:
    • Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
  • Author Name: I.A. Mack
    Affiliation: Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37324076800
    ID: 37324076800
    Order: 4
    Author Affiliations:
    • Advanced Technology Laboratories, Westinghouse Electric Corporation, Baltimore, MD, USA

Image Sensor

• sensor_type: CCD
• resolution: 250x250
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: The work suggests that CCD technology can be used for cell imaging applications due to the ability to create specialized imaging arrays.
• benefits: Capable of low light-level imaging, with anti-blooming designs to prevent excessive light from saturating the sensor.

Supporting Organizations

• supported_by: Westinghouse Electric Corporation, Texas Instruments

Manuscript Details

• publication_date: 4-6 Dec. 1972

Relevancy Score

• score: 7
• missing_fields:
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_d5f0be83-ed0b-4bf5-b286-dfcfc575f725-chargecoupled_device_ccd_imaging_at_low_light_levels.json