Charge Transfer Potential Barrier Model Of A Pinned Photodiode In Cmos Image Sensors

• doi: 10.1109/JSEN.2021.3139091
• title: Charge Transfer Potential Barrier Model of a Pinned Photodiode in CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 1927
• access_type: LOCKED
• content_type: Journals
• abstract: An analytical model for quantifying the charge transfer potential barrier (CTPB) in pinned photodiode (PPD) CMOS image sensors (CISs) is proposed. The model shows that the height of the CTPB decreases with higher transfer gate (TG) voltage and lighter P-type doping concentration. Based on the thermionic emission theory and the TG surface potential characterization, the potential barrier height dependence on the pinning voltage and the TG design parameters is analyzed. The model was verified with technology computer-aided design (TCAD) simulations and the test devices were fabricated in a $0.11 ~\mu \text{m}$ CIS dedicated process. The simulation and measurement results exhibit pretty good consistency with the proposed model.
• article_number: 9664521
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9664521
• html_url: https://ieeexplore.ieee.org/document/9664521/
• abstract_url: https://ieeexplore.ieee.org/document/9664521/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 9722574
• publication_year: 2022
• publication_date: 1 March1, 2022
• start_page: 4036
• end_page: 4042
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 802
• insert_date: 20211228
• index_terms:
  • ieee_terms:
    • Electric potential
    • Voltage
    • Semiconductor process modeling
    • Doping
    • Charge transfer
    • Sensors
    • Semiconductor device modeling
  • author_terms:
    • Charge transfer potential barrier (CTPB)
    • CMOS image sensor (CIS)
    • four-transistor active pixel
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • PIN Photodiode
    • Voltage-gated
    • Gate Voltage
    • Surface Potential
    • Doping Concentration
    • Thermionic Emission
    • Richardson Constant
    • Simulation Results
    • High Voltage
    • Higher Tendency
    • Time-of-flight
    • Time Of Flight
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Electric Field Strength
    • Electric Intensity
    • Electric Field Intensity
    • Space Charge
    • Space-charge
    • Ideal Situation
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Poisson Equation
    • Fermi Dirac
    • Fermi Function
    • Fermi Dirac Distribution
    • Fermi-Dirac
    • Fermi Distribution
    • Fermi-Dirac Distribution
    • Potential Curves
    • Production Possibility Frontier
    • Depletion Conditions
    • State Of Depletion
    • Hole Concentration
    • Injection Phase
    • Test Chip
    • Voltage Injection
    • Transfer Phase
• authors:
  • Author Name: Xiuyu Wang
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37088648421
    ID: 37088648421
    Order: 1
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Yingqiao Gao
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37089320662
    ID: 37089320662
    Order: 2
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Zhiyuan Gao
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085495653
    ID: 37085495653
    Order: 3
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 4
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: 2048x2048
• dynamic_range: not specified
• pixel_size: 4.6x4.6 µm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: 0.27 e- rms read noise specified in the context of lower light levels

Applications & Benefits

• cell_imaging: Enabled in various applications including smartphones, medical devices, and automotive systems.
• benefits: Low power consumption, high quantum efficiency, compatibility with standard CMOS processes.

Supporting Organizations

• supported_by: National Key Research and Development Program of China under Grant 2019YFB2204301

Manuscript Details

• publication_date: 1 March1, 2022

Relevancy Score

• score: 10

Processed JSON Filename

request_34406f0a-cb18-4256-abfe-964049f65fe8-charge_transfer_potential_barrier_model_of_a_pinned_photodiode_in_cmos_image_sensors.json