Charge Signal Processors In A 130 Nm Cmos Technology For The Sparse Readout Of Small Pitch Monolithic And Hybrid Pixel Sensors

• doi: 10.1109/TNS.2011.2164811
• title: Charge Signal Processors in a 130 nm CMOS Technology for the Sparse Readout of Small Pitch Monolithic and Hybrid Pixel Sensors
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 1926
• access_type: LOCKED
• content_type: Journals
• abstract: Hybrid pixel detectors are nowadays a robust and mature technology for particle detection as well as for medical and X-ray imaging, but the demands for improved performance for the next generation high energy physics experiments ask for the development of novel devices. Monolithic CMOS pixels have the potential to provide high granularity thin detectors as the sensor and the readout electronics are integrated in the same substrate. However, they suffer from a few limitations closely related to their working principle. 3D vertical integration has the potential of providing a performance breakthrough toward the design of fast, radiation tolerant and ultra thin CMOS radiation sensors. This work will discuss the design of analog circuits for processing the signals from small pitch monolithic and hybrid pixel detectors designed and fabricated in a planar 130 nm CMOS technology and in a 130 nm CMOS technology with vertical integration capabilities. Various solutions complying with different S/N ratio and detector capacitance constraints will be described in this paper by means of circuit simulations and experimental results.
• article_number: 6031789
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6031789
• html_url: https://ieeexplore.ieee.org/document/6031789/
• abstract_url: https://ieeexplore.ieee.org/document/6031789/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 6041076
• publication_year: 2011
• publication_date: Oct. 2011
• start_page: 2391
• end_page: 2400
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 270
• insert_date: 20110929
• index_terms:
  • ieee_terms:
    • CMOS integrated circuits
    • Detectors
    • CMOS technology
    • Noise
    • Dispersion
    • Prototypes
  • author_terms:
    • Analog integrated circuits
    • hybrid pixels
    • monolithic pixels
    • readout electronics
    • three-dimensional integrated circuits
  • dynamic_index_terms:
    • CMOS Technology
    • Small Pixel
    • Sensor Pixel
    • Small Pitch
    • Vertical Integration
    • Supplier Integration
    • Circuit Design
    • Physical Experiments
    • Pixel Detector
    • Circuit Simulation
    • Radiation Tolerance
    • Radiation Hardness
    • High Granularity
    • Readout Electronics
    • 3D Integration
    • Charged Particles
    • Digital Signal
    • Threshold Voltage
    • Active Sensors
    • Analog Signal
    • Parallel Signaling
    • Parasitic Capacitance
    • Heterogeneous Integration
    • Multichip Module
    • Charge Collection Efficiency
    • Charge Collection
    • Equivalent Charge
    • Sensor Layer
    • Analog Output
    • Gain Stage
    • Tracking Applications
    • Charge Injection
    • Central Pixel
• authors:
  • Author Name: Gianluca Traversi
    Affiliation: Sezione di Pavia, I.N.F.N., Pavia, Italy
    Author URL: https://ieeexplore.ieee.org/author/37272466500
    ID: 37272466500
    Order: 1
    Author Affiliations:
    • Sezione di Pavia, I.N.F.N., Pavia, Italy

Image Sensor

• sensor_type: CMOS
• resolution: small pitch
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: 200 fA (anticipated) or less, with potential for handling higher currents for noise insulation (e.g., 2 pA) depending on configurations and circuits used in design experiments (as per simulations) in the designs discussed in this work (particularly in hybrid pixels and DNW MAPS) due to variations on leakage fluctuation requirements where minimal leakage is expected to support performance characteristics).

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 60 MHz readout clock (used in simulations and operational configurations)
• signal_to_noise_ratio: ≥ 25 (required for effective performance in experiments)
• power_consumption: Approximately 1.5 mW per pixel (for SuperPIX0) & approximately 20 mW (for sensors in APSEL5T) as indicated by various prototypes running specific configurations over experimental tests, actual consumption may vary with operational choices in the larger assemblies & technology iterations bringing efficiency; presence of considerations including power dissipation extensively documented through each iterative test).
• noise: baseline offset from the preamplifier output specified to be negligible with respect to noise levels; equivalent noise charge (ENC) of the front-end electronics less than 160 e- (rms), aggregated through circuit simulations with dispersion; final characterization projected ENCs around 35 e- notable in the hybrid systems or as integrated with MAPS with adjusted sampling and feedback circuits.

Applications & Benefits

• cell_imaging: Used extensively for small pitch hybrid pixel sensors - facilitating high granularity and reduced material budgets aligning with future tasks in High Energy Physics experiments targeting resolution and clarity under radiation effects known with various particle tracking applications.
• benefits: Improvements in spatial resolution in imaging applications, enhancements on material budgets through integrated designs reducing physical footprint of sensor configurations, better radiation tolerance anticipated through the discussed structures when paired with varied bonding technologies for extensive applications in mobile systems (e.g., automotive, medical imaging devices).

Supporting Organizations

• supported_by: STMicroelectronics, GlobalFoundries-Tezzaron and other related industrial consortium participation noted through technological fabrications for prototyping and testing phases.

Manuscript Details

• publication_date: Oct. 2011

Relevancy Score

• score: 10

Processed JSON Filename

request_ce9f3ab4-56fa-4303-8af2-f9ca7c392c1d-charge_signal_processors_in_a_130_nm_cmos_technology_for_the_sparse_readout_of_small_pitch_monolithic_and_hybrid_pixel_sensors.json