Charge Domain Interlace Scan Implementation In A Cmos Image Sensor

• doi: 10.1109/JSEN.2011.2154382
• title: Charge Domain Interlace Scan Implementation in a CMOS Image Sensor
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 1925
• access_type: LOCKED
• content_type: Journals
• abstract: This paper presents the first CMOS image sensor which implements a charge domain interlacing principle to improve the signal-to-noise ratio (SNR) under equal exposure condition (integration time and light intensity). Inspired by the shared amplifier pixel structure, a novel pixel is designed to fit the charge domain interlacing principle, which works in field integration and frame integration mode. The designed image sensor is implemented in TSMC 0.18 μm CIS technology. This CMOS image sensor also contains a programmable universal image sensor peripheral circuit, allowing this sensor also to support normal progressive scan. By comparing the performances of the sensor working in charge domain interlacing and in the progressive scan, the chip measurement results prove that under the same exposure condition, the light response of the charge domain interlacing is twice that of the progressive scan. The SNR performance can be increased by 6 dB in low light level conditions.
• article_number: 5766699
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5766699
• html_url: https://ieeexplore.ieee.org/document/5766699/
• abstract_url: https://ieeexplore.ieee.org/document/5766699/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6046174
• publication_year: 2011
• publication_date: Nov. 2011
• start_page: 2621
• end_page: 2627
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 696
• insert_date: 20110512
• index_terms:
  • ieee_terms:
    • Pixel
    • Photodiodes
    • Signal to noise ratio
    • CMOS image sensors
    • Sensitivity
  • author_terms:
    • Charge binning
    • CMOS image sensor
    • interlace scan
    • low light level imaging
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Charged Domain
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Integration Time
    • Exposure Conditions
    • Exposure Status
    • Low Light Levels
    • Normal Scan
    • Mode Of Integration
    • Spatial Resolution
    • Scan Mode
    • Noise Sources
    • Line Scan
    • Even Number
    • Even Integer
    • Fill Factor
    • Light Sensitivity
    • Photophobic
    • Pixel Array
    • Digital Domain
    • Pixel Pitch
    • Signal-to-noise Ratio Improvement
    • Conversion Gain
    • Readout Circuit
    • Readout Noise
• authors:
  • Author Name: Yang Xu
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/38005706400
    ID: 38005706400
    Order: 1
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Adri J. Mierop
    Affiliation: DALSA Semiconductors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37294018800
    ID: 37294018800
    Order: 2
    Author Affiliations:
    • DALSA Semiconductors, Eindhoven, Netherlands
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 3
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: could not be extracted
• dynamic_range: could not be extracted
• pixel_size: 10µm x 10µm (basic pixels)
• dark_current: could not be extracted

Optical Data

• focal_length: could not be extracted
• aperture: could not be extracted
• field_of_view: could not be extracted
• distortion: could not be extracted

Performance Metrics

• frame_rate: could not be extracted
• signal_to_noise_ratio: improved by 6 dB in low light conditions
• sensitivity: could not be extracted
• shutter_speed: could not be extracted
• power_consumption: could not be extracted
• noise: could not be extracted

Applications & Benefits

• cell_imaging: This CMOS image sensor could be used in digital still and video cameras, as well as lower light level imaging applications.
• benefits: Enhances light sensitivity and improves SNR under low light conditions.

Supporting Organizations

• supported_by: TSMC (Taiwan Semiconductor Manufacturing Company)

Manuscript Details

• publication_date: Nov. 2011

Relevancy Score

• score: 9
• missing_fields:
  • quantum efficiency
  • readout speed
  • noise sources
  • readout method

Processed JSON Filename

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