Characterization Of Blinking Pixels In Cmos Image Sensors

• doi: 10.1109/ASMC.2008.4529048
• title: Characterization of "blinking pixels" in CMOS Image Sensors
• publisher: IEEE
• isbn: 978-1-4244-1965-4
• issn: 2376-6697
• partnum: 08CH37983
• rank: 1915
• access_type: LOCKED
• content_type: Conferences
• abstract: CMOS image sensors have increasingly replaced the use of charge coupled devices (CCD) in consumer devices because of lower power consumption, lower system cost, and the ability to randomly access data. However, one disadvantage of CMOS image sensors when compared to CCDs is increased noise signal, especially under low illumination conditions. Part of this noise is associated with leakage current or "dark current", the carrier generation that occurs when no illumination is present. Hence, minimizing and characterizing dark current is important for improving the performance of CMOS image sensors.
• article_number: 4529048
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4529048
• html_url: https://ieeexplore.ieee.org/document/4529048/
• abstract_url: https://ieeexplore.ieee.org/document/4529048/
• publication_title: 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference
• conference_location: Cambridge, MA, USA
• conference_dates: 5-7 May 2008
• publication_number: 4519622
• is_number: 4528988
• publication_year: 2008
• publication_date: 5-7 May 2008
• start_page: 255
• end_page: 258
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 554
• insert_date: 20080523
• index_terms:
  • ieee_terms:
    • Pixel
    • CMOS image sensors
    • Lighting
    • Dark current
    • Charge-coupled image sensors
    • Charge coupled devices
    • Energy consumption
    • Costs
    • Noise generators
    • Leakage current
  • dynamic_index_terms:
    • Integration Time
    • Set Threshold
    • Turn Signal
    • Blinkered
    • Complicated Algorithms
    • High Values
    • Low Values
    • CCD Camera
    • Charge-coupled Device
    • Photodiode
    • Noise Sources
    • Dark Current
    • Interface States
    • Interface Conditions
    • Carrier Generation
    • Multiple Exciton Generation
    • Carrier Multiplication
    • Bright Pixels
• isbn_formats:
  • format: CD, value: 978-1-4244-1965-4, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-1964-7, isbnType: New-2005
• authors:
  • Author Name: Kristin Ackerson
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/38304123600
    ID: 38304123600
    Order: 1
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Charles Musante
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/38181079800
    ID: 38181079800
    Order: 2
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Jeffrey Gambino
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/37294224500
    ID: 37294224500
    Order: 3
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: John Ellis-Monaghan
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/38270346700
    ID: 38270346700
    Order: 4
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Daniel Maynard
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/37271766500
    ID: 37271766500
    Order: 5
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Richard J. Rassel
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/37302339600
    ID: 37302339600
    Order: 6
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Kevin Ogg
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/38320305800
    ID: 38320305800
    Order: 7
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA
  • Author Name: Mark Jaffe
    Affiliation: IBM Microelectronics, Essex Junction, VT, USA
    Author URL: https://ieeexplore.ieee.org/author/37290281100
    ID: 37290281100
    Order: 8
    Author Affiliations:
    • IBM Microelectronics, Essex Junction, VT, USA

Image Sensor

• sensor_type: CMOS
• resolution: 704x1024
• dynamic_range: Not specified
• pixel_size: 2.2 μm
• dark_current: tens of electrons per second (up to 2000 e-/s for defects)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: dark current as described, including variable noise from blinking pixels, high standard deviation in defective pixels.

Applications & Benefits

• cell_imaging: CMOS image sensors are used in applications such as smartphones, medical devices, and automotive systems.
• benefits: Lower power consumption, lower system cost, the ability to randomly access data.

Supporting Organizations

• supported_by: IBM Microelectronics

Manuscript Details

• publication_date: 5-7 May 2008

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_c8aa105e-00f0-4a3c-a8da-8312857be399-characterization_of_blinking_pixels_in_cmos_image_sensors.json