Building Hybrid Active Pixels For Cmos Imager On Soi Substrate

• doi: 10.1109/SOI.1999.819873
• title: Building hybrid active pixels for CMOS imager on SOI substrate
• publisher: IEEE
• isbn: 0-7803-5456-7
• issn: 1078-621X
• partnum: 99CH36345
• rank: 1741
• access_type: LOCKED
• content_type: Conferences
• abstract: CMOS active pixel sensors (APS) use the advantages of mature CMOS manufacturing technology and are competing with the currently dominant CCD technology in the state-of-the-art imaging applications that require low power, high integration and complex functionality. SOI technology has been proven to be advantageous in many applications compared with conventional bulk technology. However, image sensor integration on SOI substrates suffers from low quantum efficiency, which inhibits the development of SOI imaging systems. To overcome the barrier, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1998; Yamamoto et al. 1996). However, the use of the high gain properties required a stable process and an accurate model for predicting the output, which are both not yet available. In this paper, we have investigated the performance of a hybrid active pixel structure. In this approach, the photodiode is built on the bottom substrate, while the reset transistor and the in-pixel amplifying transistor are built on the top silicon film. The performance of the APS is expected to be similar to the bulk technology, with potentially higher speed due to the lower capacitance that the photodiode has to drive in SOI technology. However, as a minimal deviation from the conventional SOI CMOS process is used to fabricate the APS, the photodiode is less optimized than current bulk technology. The operation of the APS in different configurations under different light intensities was studied and is reported.
• article_number: 819873
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=819873
• html_url: https://ieeexplore.ieee.org/document/819873/
• abstract_url: https://ieeexplore.ieee.org/document/819873/
• publication_title: 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)
• conference_location: Rohnert Park, CA, USA
• conference_dates: 4-7 Oct. 1999
• publication_number: 6647
• is_number: 17747
• publication_year: 1999
• publication_date: 4-7 Oct. 1999
• start_page: 102
• end_page: 103
• citing_paper_count: 4
• citing_patent_count: 12
• download_count: 214
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Pixel
    • CMOS technology
    • CMOS image sensors
    • Substrates
    • Photodiodes
    • Charge-coupled image sensors
    • Manufacturing
    • Charge coupled devices
    • Image sensors
    • Semiconductor device modeling
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Node Voltage
    • Top Film
• isbn_formats:
  • format: Print ISBN, value: 0-7803-5456-7, isbnType: Historical
• authors:
  • Author Name: Weiquan Zhang
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37087163576
    ID: 37087163576
    Order: 1
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: Mansun Chan
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37275216900
    ID: 37275216900
    Order: 2
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: Hongmei Wang
    Affiliation: Institute of Microelectronics, Peking University, China
    Author URL: https://ieeexplore.ieee.org/author/37087072759
    ID: 37087072759
    Order: 3
    Author Affiliations:
    • Institute of Microelectronics, Peking University, China
  • Author Name: P.K. Ko
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37276180500
    ID: 37276180500
    Order: 4
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China

Image Sensor

• sensor_type: CMOS
• resolution: 20µm x 20µm
• dynamic_range: 74dB
• pixel_size: 20µm
• dark_current: 1.03 µA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• signal_to_noise_ratio: 74dB
• noise: 0.2 mV

Applications & Benefits

• cell_imaging: Various applications in consumer markets (e.g., camcorders, digital still cameras) and military systems.
• benefits: Higher speed due to lower capacitance, radiation hardness for space and military applications.

Supporting Organizations

• supported_by: RGC earmarked research grant HKUST 6055/98E

Manuscript Details

• publication_date: 4-7 Oct. 1999

Relevancy Score

• score: 8
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_116ec525-0349-45ae-acd2-da7089299511-building_hybrid_active_pixels_for_cmos_imager_on_soi_substrate.json