Bottom Collection Of Photodiodebased Cmos Aps

• doi: 10.1109/ASDAM.2008.4743360
• title: Bottom collection of photodiode-based CMOS APS
• publisher: IEEE
• isbn: 978-1-4244-2326-2
• issn:
• partnum: 08EX2320
• rank: 1739
• access_type: LOCKED
• content_type: Conferences
• abstract: The market for solid-state image sensors has been experiencing an explosive growth in recent years resulting in CMOS sensors rapidly becoming one of the emerging sectors with more projection potential in the semiconductors industry. A CMOS active pixel sensor (APS) with a reverse biased p-n junction photodiode constitutes the structure of more widespread use, and it has been made a viable alternative to CCDs with the advent of deep submicron CMOS technologies and microlenses. Peripheral area of the junction depletion region plays an important role on collecting photocarriers in the vicinity of photodiode limits. In this paper, the peripheral photoresponse of CMOS APS of different dimensions in a deep submicron 0.18iquestm process is studied, paying special attention to the bottom collection.
• article_number: 4743360
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4743360
• html_url: https://ieeexplore.ieee.org/document/4743360/
• abstract_url: https://ieeexplore.ieee.org/document/4743360/
• publication_title: 2008 International Conference on Advanced Semiconductor Devices and Microsystems
• conference_location: Smolenice, Slovakia
• conference_dates: 12-16 Oct. 2008
• publication_number: 4721589
• is_number: 4743289
• publication_year: 2008
• publication_date: 12-16 Oct. 2008
• start_page: 67
• end_page: 70
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 134
• insert_date: 20090109
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Photodiodes
    • CMOS technology
    • Solid state circuits
    • Image sensors
    • Explosives
    • Electronics industry
    • P-n junctions
    • Lenses
    • Microoptics
  • dynamic_index_terms:
    • Active Pixel Sensor
    • CCD Camera
    • Charge-coupled Device
    • Regional Areas
    • Image Sensor
    • Camera Sensor
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Semiconductor Industry
    • Semiconductor Manufacturing
    • Semiconductor Fabrication
    • Growth In Recent Years
    • Microlenses
    • Micro Lens
    • Complementary Metal Oxide Semiconductor Technology
    • Sensor Pixel
    • Perimeter
    • Bottom Surface
    • Photocurrent
    • Pixel Area
    • P-n Junction
    • Total Pixels
    • Lateral Diffusion
    • Bottom Area
    • Conversion Gain
    • Importance Of Collection
    • Junction Capacitance
• isbn_formats:
  • format: CD, value: 978-1-4244-2326-2, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-2325-5, isbnType: New-2005
• authors:
  • Author Name: B. Blanco-Filgueira
    Affiliation: Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
    Author URL: https://ieeexplore.ieee.org/author/38276622300
    ID: 38276622300
    Order: 1
    Author Affiliations:
    • Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
  • Author Name: P. Lopez
    Affiliation: Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
    Author URL: https://ieeexplore.ieee.org/author/37300632800
    ID: 37300632800
    Order: 2
    Author Affiliations:
    • Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
  • Author Name: D. Cabello
    Affiliation: Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
    Author URL: https://ieeexplore.ieee.org/author/37266504900
    ID: 37266504900
    Order: 3
    Author Affiliations:
    • Department of Electronics and Computer Science, University of Santiago de Compostela, Spain
  • Author Name: J. Ernst
    Affiliation: Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37274180300
    ID: 37274180300
    Order: 4
    Author Affiliations:
    • Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany
  • Author Name: H. Neubauer
    Affiliation: Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37396525900
    ID: 37396525900
    Order: 5
    Author Affiliations:
    • Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany
  • Author Name: J. Hauer
    Affiliation: Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37410799200
    ID: 37410799200
    Order: 6
    Author Affiliations:
    • Fraunhofer Institut fuer Integrierte Schaltungen, Erlangen, Germany

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: The research discusses applications for CMOS image sensors in various fields, including but not limited to cell imaging.
• benefits: CMOS image sensors provide advantages such as on-chip functionality, reduced power consumption, cost-effectiveness, and miniaturization.

Supporting Organizations

• supported_by: University of Santiago de Compostela, Fraunhofer Institute for Integrated Circuits

Manuscript Details

• publication_date: 12-16 Oct. 2008

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_c50a9a53-83e9-4761-b8d6-f224f4fd192b-bottom_collection_of_photodiodebased_cmos_aps.json