Better Pictures Through Physics

• doi: 10.1109/MSSC.2010.936662
• title: Better Pictures Through Physics
• publisher: IEEE
• isbn:
• issn: 1943-0590
• rank: 1715
• access_type: LOCKED
• content_type: Magazines
• abstract: Over the last decade, CMOS image sensor technology has made huge progress. Not only has the imager's performance improved drastically, but there has also been great commercial success since the introduction of mobile phones with onboard cameras. Many scientists and marketing specialists predicted 15 years ago that CMOS image sensors were going to take over completely from charge coupled device (CCD) imagers, just as CCD imagers took over the imaging business from tubes in the mid-1980s [1].
• article_number: 5475096
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5475096
• html_url: https://ieeexplore.ieee.org/document/5475096/
• abstract_url: https://ieeexplore.ieee.org/document/5475096/
• publication_title: IEEE Solid-State Circuits Magazine
• conference_location:
• conference_dates:
• publication_number: 4563670
• is_number: 5475094
• publication_year: 2010
• publication_date: Spring 2010
• start_page: 22
• end_page: 28
• citing_paper_count: 25
• citing_patent_count: 0
• download_count: 1271
• insert_date: 20100601
• index_terms:
  • ieee_terms:
    • Tutorials
    • CMOS image sensors
    • CMOS technology
    • Physics
    • Photodiodes
    • Image sensors
    • Charge coupled devices
    • Voltage
    • Force measurement
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • CCD Camera
    • Charge-coupled Device
    • Onboard Camera
    • Pixel Size
    • Output Signal
    • Noise Sources
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Noise Components
    • Shot Noise
    • Poisson Noise
    • Light Sensitivity
    • Photophobic
    • CMOS Technology
    • Electron Counting
    • Digital Counting
    • Noise Performance
    • Digital Circuits
    • Digital Circuitry
    • Quantization Noise
    • Technology Node
    • Small Pixel
    • Pixel Pitch
    • Digital Memory
    • PIN Photodiode
    • Amount Of Photons
    • Quantity Of Photons
    • Sensor Pixel
    • Fill Factor
    • Exposure Time
    • Thermal Noise
    • Current Noise
    • Camera System
    • Power Consumption
• authors:
  • Author Name: Albert J.P. Theuwissen
    Affiliation: Electrical engineering, Catholic University슠of슠Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 1
    Author Affiliations:
    • Electrical engineering, Catholic University슠of슠Leuven, Belgium

Image Sensor

• sensor_type: CMOS
• resolution: 24 million pixels or more
• dynamic_range: not specified
• pixel_size: 2.5µm or smaller
• dark_current: extremely low for PPD due to charge storage capacitance design

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• signal_to_noise_ratio: 40 dB or more
• sensitivity: ISO 10,000 electrons per pixel
• noise: characterized by multiple sources, includes photon shot noise, kTC noise

Applications & Benefits

• cell_imaging: CMOS image sensors used in X-ray mammography and mobile devices
• benefits: Higher light sensitivity and lower dark current due to PPD design.

Supporting Organizations

• supported_by: not specified

Manuscript Details

• publication_date: Spring 2010

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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