Bcmdan Improved Photosite Structure For Highdensity Image Sensors

• doi: 10.1109/16.78373
• title: BCMD-An improved photosite structure for high-density image sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1698
• access_type: LOCKED
• content_type: Journals
• abstract: The author describes a new improved photosite structure and its use in a new image sensor that has been developed for applications requiring high-density pixel integration. The new photosite employs a buried-channel MOS transistor with a specially designed storage well located under the transistor channel in the silicon bulk. The photogenerated carriers accumulate in this well and modulate the transistor threshold. The resulting bulk charge modulated device (BCMD) has a high-sensitivity low-noise high-blooming overload capability, no detectable smear, and no image lag. The BMCD photocell has been integrated into an image-sensing array that has an 8-mm diagonal, 499 lines, and 687 pixels in each line. The individual cells are shaped into closely packed hexagons and are offset by a half pixel width between the neighbouring lines. The half pixel offset together with the dual-time readout capability gives the new sensor its superior resolution in color-sensing applications. The high light sensitivity throughout the entire visible spectrum is achieved by using a very thin polysilicon gate. The peripheral circuits needed for the array addressing and sensing functions are integrated on-chip using CMOS technology and require only the TTL driving pulses. The author further describes the basic steps of the sensor fabrication process and the results of testing and evaluation of completed units.<>
• article_number: 78373
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=78373
• html_url: https://ieeexplore.ieee.org/document/78373/
• abstract_url: https://ieeexplore.ieee.org/document/78373/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 2585
• publication_year: 1991
• publication_date: May 1991
• start_page: 1011
• end_page: 1020
• citing_paper_count: 20
• citing_patent_count: 43
• download_count: 278
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Image sensors
    • Pixel
    • MOSFETs
    • CMOS technology
    • Silicon
    • Integrated circuit technology
    • Pulse circuits
    • Sensor phenomena and characterization
    • Fabrication
    • Circuit testing
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Photodetector
    • Light Sensitivity
    • Photophobic
    • Peripheral Circuits
    • Transistor Channel
    • Entire Visible Spectrum
    • Solid Line
    • Horizontal Line
    • Dynamic Range
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Quantum Efficiency
    • Single Element
    • Loss Of Sensitivity
    • Noise Floor
    • Parasitic Capacitance
    • Capacitive Coupling
    • Electrostatic Coupling
    • AC-coupled
    • Dark Current
    • Forward Bias
    • Forward Voltage
    • Circuit Diagram
    • Texas Instruments
    • Sense Amplifier
    • Transparent Conductors
    • Array Architecture
    • Shift Register
• authors:
  • Author Name: J. Hynecek
    Affiliation: Texas Instruments, Inc., Dallas, TX, USA
    Author URL: https://ieeexplore.ieee.org/author/37301265700
    ID: 37301265700
    Order: 1
    Author Affiliations:
    • Texas Instruments, Inc., Dallas, TX, USA

Image Sensor

• sensor_type: CMOS
• resolution: 687 pixels (H) x 499 lines (V)
• dynamic_range: 72 dB
• pixel_size: 10.0 µm
• dark_current: 1.5 nA/cm²

Optical Data

• focal_length:
• aperture:
• field_of_view:
• distortion:

Performance Metrics

• frame_rate: 60 fps
• signal_to_noise_ratio:
• sensitivity: N/A
• shutter_speed: N/A
• power_consumption: N/A
• noise: 15 e-

Applications & Benefits

• cell_imaging: High-density image sensing applications in consumer, industrial, and surveillance markets.
• benefits: High sensitivity, low noise, no image lag, zero reset noise, built-in blooming protection, integration of peripheral circuits on-chip.

Supporting Organizations

• supported_by: Texas Instruments Incorporated, Texas Instruments Japan Ltd.

Manuscript Details

• publication_date: May 1991

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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