Backsideillumination 14Mpixel Qvga Timeofflight Cmos Imager
- doi: 10.1109/NEWCAS.2012.6329022
-
title: Backside-illumination 14µm-pixel QVGA
time-of-flight CMOS imager
- publisher: IEEE
- isbn: 978-1-4673-0858-8
- issn:
- partnum: 12EX6116
- rank: 1707
- access_type: LOCKED
- content_type: Conferences
-
abstract: This paper presents a
BSI(backside-illumination) 14µm-pixel QVGA CMOS image sensor SOC(System
On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation
of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at
850nm-wavelength is acquired by BSI structure and optimized micro-lens.
The DE(Depth Error) less than 1.5% within 6m is achieved with imaging
lens of f/1.2 and LED array of which the optical intensity is 0.6W/m2 at
1m-distance. Additionally, the depth linearity is measured as that the
coefficient of determination is equal to 0.9999. In order to operate
under background light illumination on a scene, dual CG(Conversion Gain)
scheme is implemented in each pixel.
- article_number: 6329022
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6329022
-
html_url:
https://ieeexplore.ieee.org/document/6329022/
-
abstract_url:
https://ieeexplore.ieee.org/document/6329022/
-
publication_title: 10th IEEE International NEWCAS
Conference
- conference_location: Montreal, QC, Canada
- conference_dates: 17-20 June 2012
- publication_number: 6324002
- is_number: 6328940
- publication_year: 2012
- publication_date: 17-20 June 2012
- start_page: 325
- end_page: 328
- citing_paper_count: 4
- citing_patent_count: 0
- download_count: 584
- insert_date: 20121011
-
index_terms:
-
ieee_terms:
- Optical imaging
- Optical sensors
- Optical reflection
- Semiconductor device measurement
- Demodulation
- Optical modulation
- Optical transmitters
-
dynamic_index_terms:
- Quantum Efficiency
- Image Sensor
- Camera Sensor
- Background Light
- System-on-chip
- Imaging Lens
- Imaging Lenses
- Microlenses
- Micro Lens
- LED Array
- Conversion Gain
- Depth Error
- Spatial Resolution
- Light Source
- Phase Difference
- Light Detection And Ranging
- Lidar
- Optical Power
- Lens Power
- Refractive Power
- Optical Signal
- Depth Images
- Intensity Modulation
- Mode Volume
- Shot Noise
- Poisson Noise
- Phase-locked Loop
- Transverse Resolution
- Time-of-flight Sensors
- Time Of Flight Camera
-
isbn_formats:
-
format: Online ISBN,
value: 978-1-4673-0858-8,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4673-0857-1,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-4673-0859-5,
isbnType: New-2005
-
authors:
-
Author Name: Min Seok Oh
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37089388889
ID: 37089388889
Order: 1
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Hae Kyung Kong
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37088694876
ID: 37088694876
Order: 2
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Han Soo Lee
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37088680183
ID: 37088680183
Order: 3
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Kyung Il Kim
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37088694628
ID: 37088694628
Order: 4
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Kwang Hyuk Bae
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37852031200
ID: 37852031200
Order: 5
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Soo Bang Kim
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37069761800
ID: 37069761800
Order: 6
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Sung Kwan Kim
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37088695294
ID: 37088695294
Order: 7
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Moo Sup Lim
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/38188695200
ID: 38188695200
Order: 8
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Jung Chak Ahn
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/38042315400
ID: 38042315400
Order: 9
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Tae Chan Kim
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37406598200
ID: 37406598200
Order: 10
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Goto Hiroshige
Affiliation: System LSI, Samsung Electronics,
Kiheung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/38489094200
ID: 38489094200
Order: 11
Author Affiliations:
- System LSI, Samsung Electronics, Kiheung, South Korea
-
Author Name: Seoung Hyun Kim
Affiliation: Semiconductor R&D Center, Samsung
Electronics, Hwasung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37088695300
ID: 37088695300
Order: 12
Author Affiliations:
-
Semiconductor R&D Center, Samsung Electronics, Hwasung, South
Korea
-
Author Name: Dong Ki Min
Affiliation: Semiconductor R&D Center, Samsung
Electronics, Hwasung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37298007400
ID: 37298007400
Order: 13
Author Affiliations:
-
Semiconductor R&D Center, Samsung Electronics, Hwasung, South
Korea
-
Author Name: Yong Jei Lee
Affiliation: Semiconductor R&D Center, Samsung
Electronics, Hwasung, South Korea
Author URL:
https://ieeexplore.ieee.org/author/38190512700
ID: 38190512700
Order: 14
Author Affiliations:
-
Semiconductor R&D Center, Samsung Electronics, Hwasung, South
Korea
Image Sensor
- sensor_type: CMOS
- resolution: 320x240 (QVGA)
- dynamic_range: not specified
- pixel_size: 14 μm
- dark_current: not specified
Optical Data
- focal_length: f/1.2
- aperture: f/1.2
- field_of_view: not specified
- distortion: not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Real-time three-dimensional imaging
applications in various fields including machine vision, robotics,
biometrics, security, automobile navigation, gaming, medical imaging,
and surveillance.
-
benefits: Offers compactness and robustness for a TOF
sensor SOC (System On a Chip). High depth precision and linearity with
the ability to operate under background light illumination.
Supporting Organizations
- supported_by: Samsung Electronics
Manuscript Details
- publication_date: 17-20 June 2012
Relevancy Score
- score: 10
-
missing_fields:
- dynamic_range
- dark_current
- sensitivity
- signal_to_noise_ratio
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
request_2fd59b4d-f3c1-4c4a-a763-8e4b963f01a7-backsideillumination_14mpixel_qvga_timeofflight_cmos_imager.json